• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.371-376
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• 1996

Au films with a thickness around 1600 $\AA$ were deposited onto glass at room temperature by ion beam sputtering with a 5 cm cold-hollow ion gun at pressure $1\times 10^{-6}-1\times 10^{-5}$ Torr. Irradiation of the Au deposited samples was carried out at pressure of $7\times 10^{-6}$ Torr. For the sputter depositions, $Ar^+$ ion energy was 1 keV, and the current density at the substrate surface was 15 $\mu$A/$\textrm{cm}^2$. Effects of 1 keV $Ar^+$ ion dose($I_d$) between $1\times 10^{16}\; and\;2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$on properties such as crystallinity, surface roughness and adhesion, etc. of the films have been investigated. The Au films sputtered by $Ar^+$ ion beam had only (111) plane and the X-ray intensity of the films decreased with increase of $I_d$. The thickness of Au films reduced with Id. $R_{ms}$ surface roughness of the films increased from 16 $\AA$ at as-deposited to 1118 $\AA$ at ion dose= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$. Adhesion of Au film on sputtered at $I_d$= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$ was 9 times greater than that of Au film with untreated, as determined by a scratch test.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.80-85
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• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.269-269
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• 2007

최근 평판디스플레이 산업이 성장함에 따라 품질향상을 위한 연구가 활발히 진행중이며 또한, 부품 소재 개발에 박차를 가하고 있다. 대형 평판디스플레이 중 낮은 전력소모와 광시야각이 우수한 TFT-LCD가 각광받고 있다. TFT-LCD 소자의 투명전극으로 사용되기 위해서는 면저항 10~1k Ohm/sq., 광투과율 85% 이상의 특성이 요구되며 ITO(Indium Tin Oxide의 약자) 타겟을 스퍼터링한 박막이 일반적으로 사용되고 있다. 본 연구에서는 $In_2O_3$ 나노 분말 제조 공법으로 제작된 ITO 타겟을 사용하여 양산성 및 대형화에 적합한 DC 마그네트론 스퍼터 방식으로 투명전극을 제조하였다. 일반적으로 사용되는 고정식 DC 마그네트론 스퍼터 방식은 타겟표면에 재증착(back deposition)되는 저급산화물로 인해 이물 또는 노즐(Nodule) 이 형성되고 이로 인해 비이상적이고 불안정한 방전 플라즈마가 박막의 특성을 저하시킨다. 이러한 문제점을 해결하기 위해 이동식 DC 마그네트론 스퍼터 방식을 채택하였으며 대형 타겟을 이용한 대형화 기판 제작과 안정적인 sputter yield로 인해 uniformity가 우수한 ITO 박막을 제조하였다. ITO 박막의 저면저항 고투과율 특성을 구현하기 위해 공정변수인 산소분압, 전류밀도(DC power) 그리고 증착온도에 따른 ITO 박막의 미세조직과 결정성을 관찰하였으며 전기적 특성을 분석하였다.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.471-478
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• 2010

Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different from the corresponding bulk properties and thus there has been a strong need for the development of a reliable test method to measure the mechanical properties of a thin film. We have developed an alternative and convenient test method to overcome the limitations of previous membrane deflection experiment and uniaxial tensile test by adopting a white light interferometer having sub-nanometer out-of-plane displacement resolution. The freestanding aluminium specimens are tested to verity the effectiveness of the test method developed and get the tensile properties. The specimens are 0.5 rum wide, $1{\mu}m$ thick and fabricated through MEMS processes including sputtering. 1 to 5 specimens are fabricated on Si dies. The membrane deflection experiments are carried out by using a homemade tester consisted of a motor-driven loading tip, a load cell, and 6 DOF alignment stages. The test system is compact enough to set it up beneath a commercial white light interferometric microscope. The white light fringes are utilized to align a specimen with the tester. The Young's modulus and yield point stress of the aluminium film are 62 GPa and 247 MPa, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.173-179
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• 2001

The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.598-605
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• 1995

Thin films of $YB_{2}Cu_{3}O_{7-d}$ were prepared on various substrated of MgO(100), $SrTiO_{3}$, and $LaAlO_{3}$ by using off-axis magentron sputtering methods and annealing in-situ. The prarameters of film fabrication processes had been optimized through a "follow the lcoal maxima" strategy to yield good quality films in therms of the critical temperature $T_{c}$ and the critical current density $J_{c}$. Optimizedproecsses employing a plane magndtron and an cylindrical magnetron yielded $T_{c}$>90K along with $J_{c}$$10^{6}$A/$\textrm{cm}^2$ at 77K and > 2${\times}$$10^{7}$A/$\textrm{cm}^2$ at 5K. The sampels, however, showed degradationinthe properties, after chemical etching for fabrication of microbridges with the line width of 2-10 mocrons. In particular, the value of $T_{c}$ for the microbridges of 2microns was as small as 80%. The degradation was strongly dependent on the line width through a formula : $T_{c}$(e)=$T_{c}$)b) [1-a exp(-1000 bL)} where $T_{c}$(e) and $T_{c}$ (b) are the values of $T_{c}$ in the absolute scale measured after and before chemical etching, respectively and L is the line width in mm. By utilizing a best fitting technique, the proper constant values of a and to b were found as exp(-1.2) and 0.22, respectively. This formula was very useful in estimatiing the upper limit of the device operationtemperature.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.