• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.393-394
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국표면공학회지
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• 제55권6호
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.

• 대한기계학회논문집B
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• 제37권1호
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• pp.19-25
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• 2013

본 연구에서는 벌지 실험을 이용하여 티타늄 박막의 기계적 물성을 측정하였다. 벌지 실험은 외적 지지구조를 가지지 않는 박막 시편의 한 면에 일정한 압력을 가하여 박막의 변위를 측정, 압력과 변위의 관계를 이용하여 박막의 기계적 물성을 측정하는 실험이다. 스퍼터링을 이용해 증착된 티타늄 박막의 두께는 1.0, 1.5, $2.0{\mu}m$ 이고, 물성의 열처리 시간에 대한 영향을 알아보기 위해 증착된 시편은 $600^{\circ}C$에서 각각 150, 300, 600 초 동안 열처리 되었다. 박막의 탄성 계수, 잔류 응력, 항복 응력이 벌지 실험을 통해 측정되었고, 실험 결과 항복 응력은 열처리 시간에 의존하는 특성을 확인하였다. 또한 시편 두께가 감소할수록 강도가 증가하는 크기효과를 관찰하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.331.2-331.2
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• 2016

스퍼터 타깃 (target)을 스퍼터링하여 박막을 형성하는 스퍼터 증착은 고체 박막 형성 방법의 하나로서 널리 사용되고 있다. 타깃을 구성하는 합금 원소의 스퍼터링율 (sputtering yield)의 차이 때문에 스퍼터 증착이 진행됨에 따라 타깃 표면의 조성이 변화하지만 일반적으로 원소 간의 표면 농도 및 스퍼터링율의 차이 효과가 서로 상쇄되므로 증착되는 합금 박막의 조성은 타깃의 조성과 일치한다. 그러나 갈륨 (Ga)을 포함하는 합금 타깃을 스퍼터링하는 경우에는 갈륨의 낮은 녹는점 특성 때문에 타깃 조성보다 갈륨의 농도가 더 높은 갈륨 합금 박막이 형성되는 현상이 최근에 보고되었다 [1]. 본 연구에서는 GeGa 및 GeSbTe 타깃을 스퍼터링한 후의 타깃 표면형상 및 성분의 변화를 조사함으로써 마그네트론 스퍼터링 기술로 갈륨 합금 박막을 형성할 때 타깃 표면에서 발생하는 불균일한 조성 변화 특성을 고찰한다. GeSbTe 타깃에 비해 GeGa 타깃은 횡적으로 구분되는 영역이 뚜렷하고 각 영역에서의 Ge와 Ga의 농도가 최대 25 at%의 차이를 나타낸다. 이러한 국부적인 미세구조와 Ge 및 Ga 농도의 차이를 비교 분석하여 갈륨 합금 타깃 표면에서 발생하는 불균일한 조성 변화 현상의 메커니즘을 설명한다.

• 한국정밀공학회지
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• 제24권10호
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• pp.109-116
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• 2007

Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

• 대한기계학회논문집
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• 제14권3호
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• pp.747-754
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• 1990

본 연구에서는 장시간 가공하는 경우 가공량과 가공물에 입사되는 이온 빔의 입사각도에 따라 이온 스파터 가공이 표면거칠기에 미치는 영향에 대해서 연구해 보았 다.

• 한국재료학회지
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• 제15권6호
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• 센서학회지
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• 제7권2호
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• pp.103-110
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• 1998

강유전체 박막과 마이크로 가공기술을 이용하여 초전형 적외선 센서를 제작하였다. 초전형 적외선 센서는 $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) (PLT) 강유전체 박막 커패시터를 RF 마그네트론 스퍼터링 방식으로 백감 전극이 증착된 MgO 기판상에 결정 성장시킨 구조를 갖고 있다. 스퍼터링된 PLT 박막은 높은 c-축 결정 구조를 가지므로 센서로 사용하기 위한 분극 처리 과정이 필요 없다. 이는 적외선 이미지 센서를 구현함에 있어서 수율 향상에 필수적인 요소이다. 또한 마이크로 가공 기술을 사용하여 센서의 열용량을 극소화함으로서 센서의 효율을 최대화하였다. 제작된 센서의 상부에 폴리이미드를 코팅하고 MgO 기판을 선택적으로 식각하여 코팅된 폴리이미드와 MgO가 강유전체 박막 커패시터를 지지하고 있는 구조를 구현하였다. 이렇게 제작된 센서의 감도는 상온에서 $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$로 측정되었으며 이는 마이크로 가공 기술을 사용하지 않은 경우보다 약 100 배의 감도 향상을 가져왔다. 2차원 배열 구조를 갖는 센서를 가지고 인체의 유 무 뿐만 아니라 위치까지 감별할 수 있는 센싱 시스템을 구현하였다.