• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• 한국표면공학회지
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• 제38권4호
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• pp.144-149
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• 2005

ZnO박막을 R.F. sputtering방법으로 R.F Power와 기판온도를 공정변수로 하여 Si(100)과 $Al_2O_3(0001)$ 기판에 증착하였다. 공정변수에 따른 박막의 미세구조와 잔류응력 및 광학적 특성 등을 평가하였다. 전반적으로 R.F. Power증가에 따른 박막의 미세구조와 잔류응력 및 광학적 특성 등을 평가하였다. 전반적으로 R.F. Power증가에 따른 박막의 미세구조는 결정립이 커지면서 더 거칠어지는 것으로 나타났다. 기판온도 $800^{\cric}C$에서 증착된 박막의 경우, Si기판에 증착한 것보다 $Al_2O_3$기판에 증착된 박막의 막질이 우수한 것으로 나타났다. 박막의 잔류 응류변화는 R.F. Power 보다는 기판온도에 더 의존하는 것으로 나타났다. 대부분의 시편의 잔류응력이 공정변수인 기판온도가 증가할수록 작아지는 것으로 측정되었다. ZnO박막의 열안정성을 평가하기위해 열싸이클링을 실시하였다. 열싸이클링 결과 $Al_2O_3$(0001)기판에 증착된 박막이 Si(100)기판에 증착된 것보다 열안정성이 우수한 것으로 나타났다. PL측정의 경우, $Al_2O_3$기판에 증착된 ZnO박막이 Si기판에 증착된 것보다 UV영역의 발광이 크고 가시광선영역의 발광이 작은것으로 나타났다. 이것은 박막안의 결함이 작아서 낮은 잔류응력을 갖고 있기 때문인 것으로 생각된다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.624-630
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.89-92
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• 2007

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.86-90
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• 2008

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

• 한국세라믹학회지
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• 제35권7호
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 대한금속재료학회지
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• 제50권11호
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• pp.801-808
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• 2012

TiAlCN coatings with various C contents were synthesized by unbalanced magnetron sputtering. The characteristics, the crystalline structure, surface morphology, hardness, and friction coefficient of the coatings as a function of the C content were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), a microhardness tester, and a wear test. In addition, their corrosion behaviors in a deaerated 3.5 wt% NaCl solution at $40^{\circ}C$ were investigated by potentiodynamic polarization tests. The results indicated that the $Ti_{14.9}Al_{15.5}C_{30.7}N_{38.9}$ coating had the highest hardness, elastic modulus, and a plastic deformation resistance of 39 GPa, 359 GPa, and 0.55, respectively, and it also had the lowest friction coefficient of approximately 0.26. Comparative evaluation of the TiAlCN coatings indicated that a wide range of coating properties, especially coating hardness, could be obtained by the synthesis methods and processing variables. The microhardness of the coatings was much higher than that from previously reported coating using similar magnetron sputtering processes. It was almost as high as the microhardness measured from the TiAlCN coatings (~41 GPa) synthesized using an arc ion plating process. The potentiodynamic test showed that the corrosion resistance of the TiAlCN coatings was significantly better than the TiAlN coatings, and their corrosion current density ($i_{corr}$), corrosion potentials ($E_{corr}$) and corrosion rate decreased with an increasing C content in the coatings. The much denser microstructure of the coatings due to the increased amount of amorphous phase with increasing C contents in the coatings could result in the the improved corrosion resistance of the coatings.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.818-821
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• 2003

Sn-doped $In_{2}O_{3}$ (ITO) thin film is one of the materials widely on research not only in the academic fields but also in industrial fields because of their transparency, high conductivity and good adhesion characteristics on substrate. ITO thin films are usually preferred oriented to one of the (222), (400), and (440) planes during crystallization process, which is dependent on processing variables. The preferred orientation affects electrical, optical and etching properties of the films. In this study, thin films of preferred oriented in different orientation were fabricated by controlling processing variables. The crystallization behavior, grain size, surface roughness, transparency and electrical properties of the thin films in different orientation were examined.

• 한국표면공학회지
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• 제46권4호
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• pp.139-144
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• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.