• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.341-347
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• 1999

An ambiguity on the correct room temperature structure of $Bi_5Ti_3FeO_{15}$ was resolved using a combined Rietveld refinement of neutron and X-ray diffraction. The structure of this compound has been reported to have a space group of F2mm (adopting 2-fold rotation symmetry along the c-axis) or A21am. However, our diffraction, study reveals that some reflections would violate F-centering and confirm that the belong to $A2_1$am. Out refinement with the space group of $A2_1$am converged at $R_p=6.85%, R_wp=9.23%$ and $\chi^2$=1.66 for an isotropic temperature model with 85 variables. The lattice constants are a=5.4677(1) $\AA$, b=5.4396(1) $\AA$, and c=41.2475(8)$\AA$. In structure, Ti/Fe atoms at the oxygen octahedral sites of the perovskite unit are completely disordered, resulting in that these atoms are transparent in neutron diffraction. The octahedra of the perovskite unit are relatively displaced along the a-axis against the Bi atoms, which contribute as a major component to the spontaneous polarization of $Bi_5Ti_3FeO_{15}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.445-448
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• 2002

New banana-shaped achiral compounds, 1,3-phenylene bis [4-{4-(7-octenyloxy)phenyliminomethyl}benzoate](PBOEB), 1,3-phenylene bis [4-{3-fluoro-4-(7-octenyloxy)phenyliminomethyl}benzoate] (PBFOEB), 1,3-phenylene bis [4-{4-(10-undecyloxy)phenyliminomethyl}benzoate](PBEUB), and 1,3phenylene bis [4-{3-fluoro-4-(10-undecyloxy)phenyliminomethyl}benzoate](PBFEUB) were obtained by general synthetic methods. PBOEB and PBFOEB having the octenyloxy groups such as $-(CH_2)_6CH=CH_2$ showed ferroelectric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/$cm^2$ and 225 nC/$cm^2$, respectively. PBEUB and PBFEUB having the undecyloxy groups such as $-{CH_2)_9CH=CH_2$ showed antiferroelectric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/$cm^2$ and 140 nC/$cm^2$, respectively. We could obtain ferroelectric and antiferroelectric phases by controlling the number of carbon atom in alkenyloxy chains of bent-core molecules.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.274-278
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• 2003

New banana-shaped achiral compounds, 1,3-phenylene bis [4-{4-(alkenyloxy) phenyliminomethyl}benzoate]s were synthesized by varying the length of alkenyl group; their ferroelectric properties are described. The smectic mesophases, including a switchable chiral smectic C $(Sm\;C^*)$ phase, were characterized by differential scanning calorimetry, polarizing optical microscopy and triangular wave method. The presence of vinyl groups at the terminals of linear side wings in the banana-shaped achiral molecules containing Schiff's base mesogen induced a decrease in melting temperature and formation of the switchable $(Sm\;C^*)$ phase in the melt. The smectic phases having the octenyloxy group such as $(CH_2)_6CH=CH_2$ showed ferroelctric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/cm² (X=H) and 225 nC/ cm² (X=F), respectively. We could obtain ferroelectric phases by controlling the number of carbon atom in alkenyloxy chain of a bent-core molecule.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.582-588
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• 2014

We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Journal of the Optical Society of Korea
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• v.6 no.1
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• pp.1-4
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• 2002

We studied experimentally the angular spectrum of the light emitted from dye Molecules near a plane boundary. It is confirmed that the molecules near the boundary can emit light into the evanescent wave mode, and the light emission with the angle greater than the critical angle is detected with good accuracy. The angular spectrum of the spontaneous radiation is measured, and the spectrum shows contributions from the molecules both near and far away from the boundary. The polarization dependence and the pumping angle dependence are also measured. The experimental results are in good agreement with quantum theory.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.707-712
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• 2004

$BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.646-649
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• 2014

Performances of spectrum-sliced channels are strongly affected by their relative intensity noise (RIN). We use polarization-independent optical modulators (PIOMs) for spectrum-sliced channels to suppress their RIN. The PIOM driven by a high sinusoidal voltage signal evenly redistributes optical frequency components in the spectral domain and reduces the RIN. It can be used at a broadband light source (BLS) output to produce spectrum-sliced channels having lower RIN values. Also, it can be used for each spectrum-sliced channel within each optical network unit (ONU). In our experiment, where 12.5-GHz-spaced spectrum-sliced channels are used in 1-GbE speed, the use of PIOM at the BLS output reduces the bit error rate (BER) of the spectrum-sliced channel by more than an order of magnitude. The use of PIOM within the ONU reduces the BER by approximately 3 orders of magnitude.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.18-18
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• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.