• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.129-132
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• 2004

An integrated inductor using low temperature cofiring ceramics(LTCC) technology has been fabricated. The inductor has Ag circular spiral coil with 16 turns (2-turn $\times$ 8-layer) and has a dimension of 11.52mm diameter and 0.71mm thick, For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured value. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1W output power and 1MHz switching frequency using the inductor has been developed. For the converter the maximum efficiency of about 81% was obtained.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1435-1437
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• 2005

An integrated inductor using the low temperature cofiring ceramics(LTCC) NiZnAg was fabricated. The inductor has a sandwitch structure, which consists of 18 turns-and-thin Ag rectangular spiral coils in 2-layers(10-turn & 8-turn in each layer). The two layers of Ag coils are among three thick Ni-Zn ferrite so the inductor has a dimension of 12.70mm$\times$12.70mm and 0.32mm thick. For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured one. Finally as an application of the LTCC integrated inductor for low power electronic circuits, a LTCC boost DC/DC converter with 1W output power and 500KHz switching frequency using the inductor fabricated was developed. For the converter the maximum efficiency of about 87% was obtained.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.160-164
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• 2005

In this paper, MEMS inductor was integrated on a 5GHz VCO using BCB as low-k dielectric layer for MEMS inductor. The VCO core circuit is realized by IBM SiGe process. We varied the spiral inductor's suspension height and posit ion on circuit, and studied their circuit interference effect on VCO performance. The VCO with inductor placed on BCB with More height and the VCO with inductor that was not positioned above active area showed better characteristics.

• Journal of Magnetics
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• v.6 no.2
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• pp.73-76
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• 2001

A double rectangular spiral type inductor has been fabricated by using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of the upper magnetic films over the coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance: inductance of 1.1 $\mu H$, Q factor of 7 (at 5 MHz), and the current capability up to 100 mA.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2245-2247
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• 2000

The purpose of this paper is to demonstrate for the design and the fabrication of suspended spiral inductors using the micromachining technology. Also. the characteristics of spiral inductors with substrate lossless are simulated by lumped-element model. The absence of the lossy silicon substrate after micormachining results in significantly improved quality factor characteristics of 14. Micromachined spiral inductors have the improvement of a quality factor of about 60% than spiral inductors on silicon which is not micromachined.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.629-632
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• 1998

This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.

• Proceedings of the KIEE Conference
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• 2004.10a
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• pp.150-152
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• 2004

An integrated inductor using the low temperature cofiring ceramics(LTCC) technology was fabricated. The inductor has Ag circular spiral coil with 16 turns (2-turn x 8-layer) and has a dimension of 11.52mm diameter and 0.71mm thick. For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured one. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1.32W output power and 1MHz switching frequency using the inductor fabricated was developed. For the converter the maximum efficiency of about 81% was obtained.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.645-648
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• 1998

We used a three-dimensional inductance extraction program, Fasthenry for optimal design of the spiral inductors on silicon substrate. The inductance and quality factor of the spiral inductors with various design parameters were calculated so that the optimal parameter value was determined. The spiral inductors then were fabricated using different foundary processes and were measured using the network analyzer and microwave probes. The pad and other parasitics of measurement system were de-embedded using the y-parameter calibration technique. the inductors fabricated using the LG 0.8um process and HP 0.5um process showed the quality factor of 5.8 and 3, respectively. Finally the equivalent circuit farameters of the spiral inductors on silicon substrate were extracted from the measurement data using the matlab.