• Journal of Magnetics
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• v.12 no.4
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.

• Journal of Magnetics
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• v.14 no.1
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.44-45
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• 2004

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.23-26
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• 2017

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.68-69
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• 2003

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of Magnetics
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• v.5 no.2
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• pp.44-49
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• 2000

Computer simulation of sensing current effects on the magnetic and magnetoresistance properties of a crossed spin-valve head is carried out. The spin-valve head has the following layer structure: Ta (8.0 nm)/NiMn (25 nm)/NiFe (2.5 nm)/Cu (3.0 nm)/NiFe (5.5 nm)/Ta (3.0 nm), and it is 1500 nm long and 600 nm wide. Even with a high pinning field of 300 Oe and a high hard-biased field of 50 Oe, the ideal crossed spin-valve structure, which is essential to the symmetry of the output signal and hence high density recording, is not realized mainly due to large interlayer magnetostatic interactions. This problem is solved by applying a suitable magnitude of sensing currents along the length direction generating magnetic fields in the width direction. The ideal spin-valve head is expected to show good symmetry of the output signal. This has not been shown explicitly in the present simulation, however, The reason for this is possibly related to the simple assumption used in this calculation that each magnetic layer consists of a single domain.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.70-71
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• 2004

• Journal of Magnetics
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• v.16 no.4
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• pp.328-331
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• 2011

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

• Journal of Magnetics
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• v.11 no.3
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• pp.108-110
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• 2006

We successfully enhanced the performance of a spin valve by inserting an ultra-thin layer of partially oxidized Fe in the pinned and free layers. With the exchange bias field kept large, the spin valve reached a GMR of 12%, which corresponded to a 55% increase in GMR when we compared it with that of spin valves without any inserted layer. The layer of partially oxidized Fe was more effective for improving the properties of the spin valve than the layer of partially oxidized $Co_{90}Fe_{10}$. Considering all the results, we can contribute the significant improvement to the combined effect of the modified local electronic structures at the Fe impurities and theenhanced spin-dependent reflections at the $\alpha-Fe_{2}O_{3} phase in the magnetic layer.