• 대한화학회지
• /
• 제23권2호
• /
• pp.65-74
• /
• 1979

팔면체$ [Ti(Ⅲ)A_3B_3]$, $ [V(Ⅲ)A_3B_3]$, $ [Fe(Ⅲ)A_3B_3]$ 및 $ [Ni(Ⅱ)A_3B_3]$ 형태 착물의 바닥상태에 대한 리간드 궤도함수의 spin-orbit coupling의 영향을 고찰하여 보았다. 리간드 궤도함수의 spin-orbit coupling이 바닥상태의 파동함수에는 영향을 주지 않았으나 에너지 준위의 분열에는 영향을 주었으며, 그 크기는 Ti(Ⅲ) > V(Ⅲ) > Fe(Ⅲ)의 순서로 감소하였다

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.394-394
• /
• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.57.1-57.1
• /
• 2007

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.58.2-58.2
• /
• 2007

• 대한화학회지
• /
• 제34권1호
• /
• pp.37-43
• /
• 1990

$D_{2d}$ 점군에 속하는 강결정장의 tetragonally 일그러진 사면체 3$d^9$전자계 착물의 바닥상태에 대한 리간드 궤도함수의 spin-orbit coupling과 중심 금속의 3d와 4p궤도함수의 intermixing이 미치는 영향에 대하여 중첩 섭동론을 사용하여 연구하였다. 단결정 $Cs_2CuCl_4$의 tetragonally 일그러진 $CuCl_4^{2-}$에 대한 d-d전이의 실험값을 사용한 LCAO-MO분석은 구리이온과 리간드 사이의 공유결합성은 Cu 4p orbital의 기여가 증가하므로서 급격히 감소하고 리간드 Cl 3p궤도함수의 spin-orbit coupling 상호작용에 의한 바닥상태의 에너지 준위 분리에 대한 효과는 $\Gamma_7(E)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_7(E)$의 순서로 감소하였다.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2002년도 동계연구발표회 논문개요집
• /
• pp.32-33
• /
• 2002

최근 세계적 주목을 받고 있는 spin FET[1] 소자의 구현은 강자성 물질에 의하여 반도체에 주입된 spin 편향된 전자가 반도체 계면에 유도된 전기장의 영향을 받아 spin-orbit interaction을 하는 mechanism(Rashbar effect)이 근간을 이루고 있다. 작은 band gap을 가지는 반도체(narrow gap 반도체)는 작은 유효질량의 전자에 의해서 이러한 Rashbar effect[2]를 크게 할 수 있는 물질로서, spin FET 구현을 위한 강력한 후보이며, 요즘 한창 연구되고 있는 주제이기도 하다[3]. (중략)

• 한국결정성장학회지
• /
• 제14권6호
• /
• pp.244-252
• /
• 2004

$CuISe_2$ 단결정 박막은 수평 전기로에서 합성한 $CuInSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 선 요동곡선(DCRC) 으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs 였다. $CuAlSe_2$/Si(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 1.1851 eV-($8.99\times10^{-4} eV/K)T^2$/(T+153k)였다. 광전류 스펙트럼으로 부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.0087eV이며 spin-orbit Δso값은 0.2329 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1-, B_1$-와 $C_1$-exciton봉우리임을 알았다.

• 센서학회지
• /
• 제16권1호
• /
• pp.1-6
• /
• 2007

A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.

• 센서학회지
• /
• 제15권6호
• /
• pp.397-405
• /
• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• 센서학회지
• /
• 제14권3호
• /
• pp.160-168
• /
• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.