• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.37-42
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• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.118-124
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• 2005

We have obtained sharp and clearly resolved ESR spectra of $Nd^{3+}$ and $Er^{3+}$ in vapor transport equilibrium (VTE) treated $LiNbO_3$ crystals, consequently have determined more accurate spin Hamiltonian parameters, than those in congruent samples. The anisotropic hyperfine structures of $^{143}Nd^{3+}$ and $^{145}Nd^{3+}$ in the VTE-treated crystals at liquid helium temperature have been analyzed. It is proposed that both rare earth ions favor the lithium site in $LiNbO_3$ from the consideration of the determined anisotropic g-values.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.221-221
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• 2012

Small-molecule organic photovoltaic cells have recently attracted growing attention due to their potential for the low-cost fabrication of flexible and lightweight solar modules. The PVP/Ag nanoparticles were synthesized by the reaction of poly vinylpyrrolidone (PVP) and silver nitrate at $150^{\circ}C$. In the reaction, the size of the nanoparticles was controlled by relative mole fractions between PVP and Ag. The PVP/Ag nanoparticles with various sizes were then spin coated on the patterned ITO glass prior to the deposition of the PEDOT:PSS hole transport layer. The scattering of the incident light caused by these incorporated nanoparticles resulted in an increase in the path length of the light through the active layer and hence the enhancement of the light absorption. This scattering effect increased as the size of the nanoparticles increased, but it was offset by the decrease in total transmittance caused by the non-transparent nanoparticles. As a result, the maximum power conversion efficiency, 0.96% which was the value enhanced by 14% compared to the cell without incorporation of nanoparticles, was obtained when the mole fraction of PVP:Ag was 24:1 and the size of the nanoparticles was 20~40 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.222-222
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• 1999

From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.96.1-96.1
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• 2014

The rotation of asteroids can help reveal not only the fundamental characteristics of asteroids but also the origin and evolution of our Solar System. From the photometric observations for NEA 162173 (1999 JU3) and Maria family asteroids using 0.5 m- to 2 m- class telescopes at 10 observatories in the northern hemisphere, I obtained a total of 260 lightcurves for 97 asteroids and derived synodic rotational periods for 51 objects, including newly obtained periods of 34 asteroids. For the sake of efficiency, I developed an observation scheduler, SMART (Scheduler for Measuring Asteroid RoTation) and a photometric analysis software subsystem, ASAP (Asteroid Spin Analysis Package). Based on the lightcurve analysis of NEA 162173 (1999 JU3) and Maria family asteroids, 1) I present the rotational and observational characteristics of 1999 JU3 and provided the Hayabusa-2 Science team with the information on pole orientations, 2) I investigated correlations among rotational periods, amplitudes of lightcurves, and sizes, and conclude that the rotational properties of old-type family asteroids have been changed considerably by the YORP effect. 3) Finally, I found the Yarkovsky footprints on the Maria asteroid family and estimated that approximately 37 to 75 Maria family asteroids larger than 1 km have entered the near-Earth space every 100 Myr. This study should reveal the collisional history and transport route of the members from the resonance region to the near Earth space, for the first time.

• YAKHAK HOEJI
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• v.46 no.2
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• pp.124-128
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• 2002

The nitrone-based free radical trapping reagent, $\alpha$-phenyl-n-tert-butyl nitrone (PBN) has been proposed as therapeutic agent for stroke. We used this for model drug of development of new drug for neuroprotection. The purpose of this study was to evaluate the blood-brain barrier (BBB) permeability of PBN in Sprague-Dawly (SD) rats. The BBB transport of PBN was investigated in SD rats using internal carotid artery perfusion (ICAP) method at a rate of 4 mι/min for 15 second. We also obtained pharmacokinetic parameters of PBN using single intravenous injection technique. When we estimated BBB permeability of PBN with ICAP method, the brain volume of distribution of PBN was 60.0 $\pm$ 12.0 $\mu\textrm{g}$/ι. The brain uptake of PBN after IV injection at 120 min was 0.15 $\pm$ 0.01%ID/g. The PBN was transported to the brain through the BBB well in rats, because PBN is small molecule (MW 177) and lipid-soluble (log P 1.23) compound.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.