• 한국세라믹학회지
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• 제29권11호
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• pp.863-869
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• 1992

A SOG(spin glass) solution with excellent wetting to Si wafers was prepared by acid-hydrolysis of Si(OEt)4 and Me2Si(OEt)2. The solution was spin coated on Si wafers, and effects of heat treatment of the film were characterized by TG/DTA, FTIR and Ellipsometry. Silica film was obtained by heat treatment at $600^{\circ}C$ within one hour, but heat treatment at 80$0^{\circ}C$ caused interfacial oxidation of the silicon substrate. Unexpectedly silica films with much better adhesion were obtained by curing at $600^{\circ}C$ for over 30 min. than those obtained by thermal oxidation.

• 한국자기학회지
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• 제5권5호
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• pp.343-350
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• 1995

An overview will be given on recent Mossbauer and magnetization investigation of the applied field dependence of the magnetic properties of typical systems without strong magnetic anisotropy and showing the absence of magnetic saturation in high fields (including iron-rich spin glass (amorphous $Fe_{93}Zr_{7}$, soft ferromagnets (amorphous $Fe_{88}Zr_{12}$, $Fe_{70}Ni_{20}Zr_{10}$ and $Fe_{88}B_{12}$) and pure Fe). The results emphasize that shape anisotropy due to surface irregularities causes misalignment between the magnetization and the applied field in the otherwise collinear magnetic structure.

• 대한기계학회논문집B
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• 제39권5호
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• pp.463-469
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• 2015

산화그래핀 소재를 합성하여 투명한 박막 코팅기술을 개발하고 특성을 평가하였다. 스핀과 스프레이 공정을 동시에 이용하여 산화그래핀을 유리 기판에 균일하게 박막코팅을 하였다. 균일하게 산화그래핀을 스핀-스프레이 공정을 이용하여 박막코팅을 하기 위하여 유리기판을 amine-functional group으로 표면개질을 하였다. 또한, 스핀-스프레이 공정을 이용하여 산화그래핀 박막을 4층까지 적층을 하였고 86% 이상의 투명도를 확보하였다. 이와 같은 합성된 산화그래핀 박막소재의 스핀-스프레이 코팅 기술은 다양한 전자제품들의 display를 대면적으로 코팅할 수 있을 것으로 기대되어진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국세라믹학회지
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• 제53권3호
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• 전기학회논문지P
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• 제51권2호
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• pp.82-86
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• 2002

A series of $Ni_xZn_yFe_{3-x-y}O_4$ films were prepared by spin-spray ferrite plating on glass substrates from aqueous solution at $90[^{\circ}C]$. The magnetic properties in terms of contents of Ni and Zn in the plated films are presented. All the films are polycrystalline with spinel structure. At x+y=0.58, the film presents preferential orientation. As composition of y in the films increases grain size and void in the films increases, while saturation magnetization and coercive force of the films decrease.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.91-95
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• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.133.4-133
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• 1998

• 통합자연과학논문집
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• 제6권4호
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• pp.211-214
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• 2013

In this study, in order to investigate how consecutive treatments of glass surface with HF acid and water vapor/Ar plasma affect the quality of 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM), poly(3,4-ethylenedioxythiophene) (PEDOT) thin films were vapor phase-polymerized immediately after spin coating of FeCl3 and poly-urethane diol-mixed oxidant solution on the monolayer surfaces prepared at various treatment conditions. For the film characterization, various poweful tools were used, e.g., FE-SEM, an optical microscope, four point probe, and a contact angle analyzer. The characterization revealed that HF treatment is not desirable for the synthesis of a high quality PEDOT thin film via vapor phase polymerization method. Rather, sole treatment with plasma noticeably improved the quality of APS-SAM on glass surface. As a result, a highly dense and smooth PEDOT thin film was grown on uniform oxidant film-coated APS monolayer surface.

• 통합자연과학논문집
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• 제6권4호
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• pp.215-219
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• 2013

In this study, in order to investigate how consecutive treatments of glass surface with HF acid and water vapor/Ar plasma affect the quality of 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM), poly(3,4-ethylenedioxythiophene) (PEDOT) thin films were vapor phase-polymerized immediately after spin coating of FeCl3 and poly-urethane diol-mixed oxidant solution on the monolayer surfaces prepared at various treatment conditions. For the film characterization, various poweful tools were used, e.g., FE-SEM, an optical microscope, four point probe, and a contact angle analyzer. The characterization revealed that a well prepared APS-SAM on a glass surface treated with water vapor/Ar plasma is very useful for uniform coating of FeCl3 and DUDO mixed oxidant solution, regardless of HF treatment. On the other hand, a bare glass surface without APS-SAM but treated with HF and water vapor/Ar plasma generally led to a very poor oxidant film. As a result, PEDOT films vapor phase-polymerized on APS-SAM surfaces are far superior to those on bare glass surfaces in the quality and electrical characteristics aspects.