• Journal of Magnetics
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• v.13 no.1
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• pp.23-29
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• 2008

The magnetic and other physical characteristics of $Mn_xSi_{1-x}Te$ have been investigated by electron magnetic resonance (EMR), X-ray diffraction (XRD) and other experiments. $Mn_xSi_{1-x}Te$ is found to have corundum structure for manganese contents up to 10% and also to be ferromagnetic for temperatures below 80 K. While ferromagnetic resonance signal coexists with the usual paramagnetic resonance signal, invariance of the g-factor inferred from the electron paramagnetic resonance signals throughout all temperature ranges clearly confirms that the manganese ions are in the electronic 3d5 state. The temperature dependence of EMR line-width is the same as other diluted magnetic semiconductors. From the EMR signals relaxation times $T_2$ and $T_1$ of $Mn_xSi_{1-x}Te$ compounds are estimated to be about $4.4{\times}10^{-10}s$ and $9.3{\times}10^{-8}s$ respectively and are found to vary slightly with temperature or composition change. Exchange narrowing of the EMR line-width becomes dominant for the sample in which the substitution ratio, x = 30%. For one sample, in which x = 0.5%, spin glass-like behavior is indicated by EMR signals for temperatures lower than 60 K. This behavior may authentic for samples within a certain range of x.

• Journal of Adhesion and Interface
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• v.16 no.1
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• pp.6-14
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• 2015

In this study, physically and chemically stable core-crosslinked amphiphilic polymer (CCAP) nanoparticles were prepared using amphiphilic reactive precursors via soap-free emulsion process. Obtained CCAP nanoparticles were used as templates for synthesis of nanostructured $TiO_2$ nanoparticles. First, CCAP nanoparticles dispersed aqueous solutions were mixed with titanium isopropoxide to prepare stable organic-inorganic hybrid sols, and then obtained sols were spin coated onto glass substrate to prepare hybrid thin films onto glass, and then hybrid thin films were calcinated at various temperature to remove CCAP. Nanostructure of calcinated thin fims were examined by SEM. To study effect of CCAP nanoparticles on nanostructure of $TiO_2$ nanoparticles, the morphology of $TiO_2$ nanoparticles prepared using various CCAP templates was compared with that of $TiO_2$ nanoparticles prepared using conventional organic template, nonionic surfactant, Triton X-100.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.296-300
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• 1999

Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were $substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al_2O_3/CoFe/NiFe$ and $substrate/Ta/NiFe/CoFe/ Al_2O_3/CoFe/NiFe/FeMn/NiFe$. Fabrication conditions of insulating layer ($Al_2O_3$) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Corning glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 $^{\circ}C$ annealing and then to drop rapidly after 180 $^{\circ}C$ annealing.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.98-103
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• 1999

We have studied changes of coercivity $(H_c)$, exchange anisotropy field $(H_{ex})$ and MR ration in glass/Ta/NiFeI/CoI(t)/Cu/CoII(3/4 t)/NiFeII/FeMn spin valve structures by changing Ar pressure and thicknesses of Co layers using DC, RF sputtering methods. We obtained minimum coercivity of 2.8 Oe at 4 mTorr of Ar pressure, exchange anisotropy field of 50.0 Oe at 6 mTorr and 5.3 % of MR ratio at 10 mTorr. Also, we obtained 3.0 Oe of coercivity at 40 $\AA$ of CoI layer, 65.9 Oe at 13 $\AA$ and 4.7 % of MR ratio at 27 $\AA$ and 34 $\AA$ by changing the thicknesses of Co layers.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• ETRI Journal
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• v.36 no.5
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• pp.847-855
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• 2014

We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of $TiO_2$ solutions for a planarization of the embossed nano-structure on a glass substrate. The first $TiO_2$ solution was $TiO_2$ sol, which consists of $TiO_2$ colloidal particles in an acidic aqueous solution and several organic additives. The second solution was an organic and inorganic hybrid solution of $TiO_2$. The surface roughness ($R_a$) and refractive index of the $TiO_2$ planarization films on a flat glass were 0.4 nm and 2.0 at 550 nm, respectively. The J-V characteristics of the OLED including the embossed nano-structure and the $TiO_2$ planarization film were almost the same as those of an OLED with a flat glass, and the luminous efficacy of the aforementioned OLED was enhanced by 34% compared to that of an OLED with a flat glass.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.187-192
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• 2000

We prepared $SiO_2-Na_2O-R_mO_n$ thin films based on economics of water glass and investigated optical, mechanical properties of product thin films. Coating sol stabilized with 1 N HCl and 1 N $NH_4OH$, was fabricated by using water glass and calcium nitrate, and aluminum nitrate as starting materials. As-coated films on stainless steel, Si wafer and soda-lime-silica glass by spinning were finally annealed at 500, 750 and $900^{\circ}C$. Micro hardness and nitrogen content in film surface of annealed films were measured by Knoop hardness tester and EDX, respectively. Field Emission Scanning Electron Microscope (FE-SEM) and UV-VIS spectroscopy were adopted to analyze surface morphology and thickness and reflectance of our films.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.516-519
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• 2011

Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.1-30.1
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• 2010

Hydrogen silsesquioxane (HSQ)는 spin-on glass (SOG)의 일종으로 spin-coating이 가능하며 $400^{\circ}C$ 이상의 고온에서의 어닐링을 통해 silica로 변환되는 물질이다. 이 물질은 가시광선 영역에서 95% 이상의 높은 투과도를 나타내며 산화물로의 변환 공정이 간단하며 표면 개질이 용이하기 때문에 나노 바이오, 반도체, 광전자 소자 등의 다양한 분야로의 적용이 기대되는 물질이다. 최근 나노 기술의 발전에 따라 다양한 나노 구조물을 이용하여 소자들의 효율을 향상시키는 연구가 활발하게 진행되고 있다. 따라서 HSQ를 이용하는 소자의 효율을 높이기 위해서는 쉽고 간단하면서 생산성이 높은 HSQ 나노 구조물 제작 기술에 대한 연구가 필요하다. 현재 개발된 대면적 HSQ 나노 구조물 제작 기술로는 e-beam lithography, x-ray lithography, room temperature nanoimprint lithography 등이 있다. 하지만 이와 같은 나노 패터닝 기술들은 생산성이 낮거나 공정이 복잡한 단점이 있다. 본 연구에서는 poly(dimethylsiloxane) (PDMS) mold를 이용한 직접 printing 기술을 통해 HSQ 나노 구조물을 제작하는 기술을 개발하였다. 이 기술은 대면적에 간단한 기술로 HSQ 나노 패턴을 제작할 수 있으며 master mold의 패턴이 그대로 HSQ layer로 전사되기 때문에 제작이 까다로운 아날로그 패턴도 손쉽게 제작할 수 있는 장점을 가지고 있다. 따라서 이와 같은 HSQ 직접 printing 기술을 이용하여 HSQ 아날로그 나노 패턴을 제작하고 이의 응용기술에 대한 연구를 진행하였다.