• Title/Summary/Keyword: Speed breakdown

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SMD Detection and Classification Using YOLO Network Based on Robust Data Preprocessing and Augmentation Techniques

  • NDAYISHIMIYE, Fabrice;Lee, Joon Jae
    • Journal of Multimedia Information System
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    • v.8 no.4
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    • pp.211-220
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    • 2021
  • The process of inspecting SMDs on the PCB boards improves the product quality, performance and reduces frequent issues in this field. However, undesirable scenarios such as assembly failure and device breakdown can occur sometime during the assembly process and result in costly losses and time-consuming. The detection of these components with a model based on deep learning may be effective to reduce some errors during the inspection in the manufacturing process. In this paper, YOLO models were used due to their high speed and good accuracy in classification and target detection. A SMD detection and classification method using YOLO networks based on robust data preprocessing and augmentation techniques to deal with various types of variation such as illumination and geometric changes is proposed. For 9 different components of data provided from a PCB manufacturer company, the experiment results show that YOLOv4 is better with fast detection and classification than YOLOv3.

Study on Electric Characteristics of IGBT Having P Region Under Trench Gate (Trench Gate 하단 P-영역을 갖는 IGBT의 전기적 특성에 관한 연구)

  • Ann, Byoung Sub;Yuek, Jinkeoung;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.361-365
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    • 2019
  • Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.

Technical Trends in Vertical GaN Power Devices for Electric Vehicle Application (전기차 응용을 위한 수직형 GaN 전력반도체 기술 동향)

  • H.S. Lee;S.B. Bae
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.36-45
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    • 2023
  • The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

Vacuum Characteristics of KSTAR ICRF Antenna during RF Operation (고주파 인가시의 KSTAR ICRF 안테나의 진공특성)

  • Bae, Young-Dug;Kwak, Jong-Gu;Hong, Bong-Geon
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.314-324
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    • 2006
  • The vacuum characteristics of the KSTAR ICRF antenna were experimentally investigated. The fabricated antenna was installed in the RF Test Chamber(RFTC) which has a vacuum system with an effective pumping speed of 1015 l/s. The time variations of RFTC pressure, total gas load and ultimate pressure were measured before the RF test. RF conditioning effect was studied by repeating RF pulses at low power level. A time variation of the RFTC pressure was measured during a RF power was applied to the antenna. Threshold pressure at which a RF breakdown occurs was investigated. Whenever the pressure was higher than $10^{-4}$ mbar, the RF breakdown occurred. During a long pulse testing, the temperature of the antenna and RFTC pressure were measured to investigate long pulse limitation of the maximum available voltage without any cooling, which were compared with testing results with a water cooling of the antenna.

A Study on the Capacity Analysis of 8-lane basic section Freeway (8차로 고속도로 기본구간 용량분석에 관한 연구)

  • 김상구;서영선
    • Journal of Korean Society of Transportation
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    • v.17 no.3
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    • pp.87-96
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    • 1999
  • It is very important to analyze the capacity of basic freeway section in terms of planning, design, and operation of roads. Capacity, in Korean Highway Capacity Manual was Published in 1992, had been determined by data collected in only 4-lane freeway. But, Korea is continuously planning and constructing multi-lane roads for increasing traffic demand. For this reason, it is necessary to determine the capacity for multi-lane freeways. This study goals are two-fold the determination of lane capacity for 8-lane freeway; and the development of methodology determining total capacity using lane friction factor This study utilized the data collected by loop detectors at a station of FTMS in Kyungbu expressway. For determining capacities, this study analyzed maximum flow rate in various aspects such as collecting period, each lane, and total lane in one-way. In addition, this study evaluated the breakdown in traffic flow relations in order to find out interrelation of breakdown among lanes. Through this analysis, this study determined lane friction factors, critical speed, and critical density. Finally, this study expressed a new methodology of capacity analysis for multi-lane freeways using some findings from this analysis.

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A Design Method on Power Sensefet to Protect High Voltage Power Device (고전압 전력소자를 보호하기 위한 센스펫 설계방법)

  • Kyoung, Sin-Su;Seo, Jun-Ho;Kim, Yo-Han;Lee, Jong-Seok;Kang, Ey-Goo;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.6-7
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    • 2008
  • Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

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4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop (낮은 순방향 전압 강하를 갖는 4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR))

  • Bae, Dong-woo;kim, Kwang-soo
    • Journal of IKEEE
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    • v.21 no.1
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    • pp.73-76
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    • 2017
  • SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

Analysis of Motor Winding impact by inverter Switching Voltage Waveforms (인버터 스위칭전압 파형에 의한 전동기 권선 영향 해석)

  • 김종겸
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.1
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    • pp.94-101
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    • 1999
  • In this paper the problems associated with the switching surge of PWM inverter devices were analysed. As the application of ASD for efficient speed control of AC rmtors is increased, so is the rrntor and ASD-related failure increased. In the industrial rmtor awlications, the introduction of PWM drives can sometmes cause insulation breakdown between the phase windings due to high transient voltage peak. The motor cable length combined with the high switching frequency becomes more sensitive issue for proper drive operation. Effects of the cable length and high switching frequency influence both on rmtor and inverter. When the insulation level of rmtor winding is low, the failure probability caused by high peak voltage and fast voltage rise times(dv/dt) is high. Voltage refloctions are simulated far rmtor capacities, ASD and rise times and are presented graphically. The filtering techniques are discussed to reduce the rmtor terminal overvoltage and dv/dt in inverter fed AC rrntor drive systems. We confirmed that the lower motar capacity and rmtar insulation level, the shorter switching time and cable length and the higrer the probability of insulation breakdown .kdown .

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Classification of Metal Scraps Using Laser Induced Breakdown Spectroscopy (레이저유도붕괴분광법을 이용한 폐금속 분류)

  • Shin, Sungho;Lee, Jaepil;Moon, Youngmin;Choi, Jang-Hee;Jeong, Sungho
    • Resources Recycling
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    • v.27 no.1
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    • pp.31-37
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    • 2018
  • To enhance the recycling rate of used metal resources, it is strongly desired to develop a metal sorting system that can automatically identify metal type from mixed metal scraps and sort them separately. Laser-induced breakdown spectroscopy(LIBS) is a technique that enables real time classification of different metals based on multi-elemental and in-air analysis. In this work, we report the results of LIBS elemental analysis of field scrap samples acquired from a recycling company. By applying multivariate analysis, it was found that the LIBS signals of five different metals could be perfectly classified if surface contamination was removed. The classification accuracy degraded for LIBS signals including contaminant emission, which however could be overcome by performing the multivariate analysis using properly selected emission lines of higher correlation only. The significant improvement in classification accuracy and process speed by the selection of proper emission lines demonstrated the feasibility of LIBS technique as an industrial tool for metal scrap sorting.

Dynamic O-D Trip estimation Using Real-time Traffic Data in congestion (혼잡 교통류 특성을 반영한 동적 O-D 통행량 예측 모형 개발)

  • Kim Yong-Hoon;Lee Seung-Jae
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.5 no.1 s.9
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    • pp.1-12
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    • 2006
  • In order to estimate a dynamic origin and destination demand between on and off-ramps in the freeways, a traffic flow theory can be used to calculate a link distribution proportion of traffics moving between them. We have developed a dynamic traffic estimation model based on the three-phase traffic theory (Kerner, 2004), which explains the complexity of traffic phenomena based on phase transitions among free-flow, synchronized flow and moving jam phases, and on their complex nonlinear spatiotemporal features. The developed model explains and estimates traffic congestion in terms of speed breakdown, phase transition and queue propagation. We have estimated the link, on and off-ramp volumes at every time interval by using traffic data collected from vehicle detection systems in Korea freeway sections. The analyzed results show that the developed model describes traffic flows adequately.

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