• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.1244-1249
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• 2002

In this study, the physical characteristics of steel-wire sound absorbing materials with different thickness and bulk density is experimentally obtained in terms of the porosity and specific flow resistivity. Based on the experimental results, the following conclusions can be made. The porosities of steel-wire sound absorbing materials are smaller than those of general absorbing materials, which are inversely proportional to the volume densities. For the porosity measurement with a good accuracy, the dynamic correction based on the system compliance should be involved in porosity measurement. In addition, the flow condition for the precise measurement of the specific flow resistivity of steel-wire sound absorbing materials should be limited in the laminar flow region.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.10a
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• pp.237-243
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• 1997

Most outdoor sounds go from sources relatively near the ground to receivers near the ground. When either source or receiver are near the ground, interference can occur between the direct sound and that reflected at the ground which travels a slightly longer path. The sound pressure at the receiver is very different depending on the state of ground surface i.e. ground impedance. Ground impedances could be characterized by the value of a single parameter, namely the flow resistivity of the ground surface. This study suggests the measurement method of the flow resistivity using two microphones and predicts the flow resistivities of various ground surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.67-68
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• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.1347-1352
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• 2001

In this study, the acoustic properties of polyester sound absorbing materials with three different bulk densities were investigated by calculating and measuring the acoustic parameters in terms of characteristic impedance, propagation constant, and absorption coefficient. For the calculations, Delany and Bazley's empirical equation was used together with the experimentally obtained specific flow resistivities under steady flow conditions. For the experimental measurements, the well-known two-thickness method was accessed. The experimentally measured values of characteristic impedance and propagation constant were generally agreed well with the corresponding calculated values. Based on the comparisons between the calculations and measurements, it was found that the magnitude of the absorption coefficient was closely related to the characteristic impedance and the real part of the propagation constant. Especially, the maximum magnitude of the absorption coefficient was depended upon the imaginary part of the propagation constant indicating the phase change of the propagation constant.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.706-714
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• 1998

The MgO-{{{{ { {Al }_{2 }O }_{3 } }}-{{{{ { {SiO }_{2 } }_{ } }}system containing alumina powder was fabricated sintered at various temperature and analyzed in order to study the sintering mechanism and crystallization characteristics. The specimen composed of glass powder with average particle size of 8.27 $\mu\textrm{m}$ and 0-40 vol% alumina powder were sint-ered for 3 hrs at the temperature between 850$^{\circ}C$ and 1350$^{\circ}C$ The sintering mechanism consists of the redis-tribution of particles occuring at 750$^{\circ}C$ and the viscous flow at 850∼950$^{\circ}C$. The degree of crystallization and sintering temperatue were dependent upon the ratio of glass/alumina. The second phase from the reaction between glass and alumina was not observed which was confirmed by XRD and properties analysis. The density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm2 5.8∼7.38 at 1 GHz density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm3 5.8∼7.38 at 1GHz and 1.23∼4.70${\times}$107 $\Omega$$.$m respectively.

• Proceedings of the Safety Management and Science Conference
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• 2002.11a
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• pp.279-284
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• 2002

All-vanadium redox flow battery(VRFB) has been studied actively as one of the most promising electrochemical energy storage systems for a wide range of applications such as electric vehicles, photovoltaic arrays, and excess power generated by electric power plants at night time. CPCS has been shown to have the characteristics as an excellent current collector for VRFB and electrochemical properties of specific resistivity 0.31 $\Omega$cm, which were composed of G-1028 80 wt%, PVC 10 wt%, DBP 5 wt% and FS 5 wt%. Energy efficiencies of VRFB with the CPCE and the existing electrode assembly were 84.14 % and 77.24 % respectively, in charge/discharge experiments at constant current of 200 mA, and the CPCE was confirmed to be suitable as the electrode of VRFB.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.2
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• pp.240-248
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• 2011

All-vanadium redox flow battery (VRFB) has been studied actively as one of the most promising electrochemical energy storage systems for a wide range of applications such as electric vehicles, photovoltaic arrays, and excess power generated by electric power plants at night time. Among consisting elements of the VRFB, the ion exchange membrane and the electrode play important roles. In this study, carbon PVC coposite sheets for the VRFB have been developed and electrochemical characteristics investigated. Current collector for VRFB, carbon PVC composite sheets (CPCS), were prepared with G-1028 as a conducting particle, PVC as a polymer, Dibutyl phthalate (DBP) as a plasticizer and fumed Silica (FS) as a dispersion agent. CPCS has been shown to have the characteristics as an excellent current collector for VRFB and electrochemical properties of specific resistivity 0.31 ${\Omega}cm$, which were composed of G-1028 80 wt%, PVC 10 wt%, DBP 5 wt% and FS 5 wt%.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.