• Title/Summary/Keyword: Space charge limited conduction

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A Study on the Electrical Properties of Polyimide Langmuir-Blodgett Films (폴리이미드 랭뮤어-블로젯막의 전기적 특성에 관한 연구)

  • 정순욱;임현성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.480-483
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    • 2000
  • Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.

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Impedance Spectroscopy of ${\pi}$-Conjugated Organic Materials

  • Kim, Seong-Hyun;Chu, Hye-Yong;Zyung, Taeh-Young;Yang, Yong-Suk
    • ETRI Journal
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    • v.26 no.2
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    • pp.161-166
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    • 2004
  • AC electrical properties of organic light-emitting diodes with poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene) (MEH-PPV), poly[2,5-bia(dimethyloctylsilyl)-1,4-phenylenevinylene] (BDMOS-PPV), and tris-(8-hydroxyquinolate)-aluminum $(AlQ_3)$ as light-emitting materials are studied. The frequency-dependent real and imaginary parts of impedance were fitted using an equivalent circuit. We found that the conduction mechanism is a space-charge limited current with exponential trap distribution.

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Electrical characteristics of the this film interface of amorphous chalcogenide semiconductor (비정질 칼코게나이드 반도체 박막 경계면의 전기적 특성)

  • 박창엽
    • 전기의세계
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    • v.29 no.2
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    • pp.111-117
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    • 1980
  • Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

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Current-voltage characteristics of ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl device with temperature variation (ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl 구조에서 온도 변화에 따른 전압-전류 특성)

  • Kim, Sang-Keol;Chung, Dong-Hoe;Hong, Jin-Woong;Chung, Taek-Gyun;Kim, Tae-Wan;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.114-117
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    • 2002
  • We have studied the dependence of current-voltage characteristics of Organic Light Emitting Diodes(OLEDs) on temperature-dependent variation. The OLEDs have been based on the molecular compounds. N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport. tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and Poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) as a buffer layer. The current-voltage characteristics were measured in the temperature range of 10K and 300K. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling region.Ā᐀會Ā᐀衅?⨀頱岒ᄀĀ저會Ā저?⨀⡌ឫഀĀ᐀會Ā᐀㡆?⨀쁌ឫഀĀ᐀會Ā᐀遆?⨀郞ග瀀ꀏ會Ā?⨀〲岒ऀĀ᐀會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ഀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫Ā저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ഀĀ저會Ā저ꡉ?⨀1岒ഀĀ저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග䈀Ā切

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A Review of SiC Static Induction Transistor (SIT) Development for High-Frequency Power Amplifiers

  • Sung, Y.M.;Casady, J.B.;Dufrene, J.B.
    • KIEE International Transactions on Electrophysics and Applications
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    • v.11C no.4
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    • pp.99-106
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    • 2001
  • An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

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Titanium Dioxide Sol-gel Schottky Diodes and Effect of Titanium Dioxide Nanoparticle

  • Maniruzzaman, Mohammad;Zhai, Lindong;Mun, Seongcheol;Kim, Jaehwan
    • Journal of Electrical Engineering and Technology
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    • v.10 no.6
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    • pp.2343-2347
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    • 2015
  • This paper reports the effect of Titanium dioxide (TiO2) nanoparticles on a TiO2 sol-gel Schottky diode. TiO2 nanoparticles were blended with TiO2 sol-gel to fabricate the Schottky diode. TiO2 nanoparticles showed strong anatase and rutile X-ray diffraction peaks. However, the mixture of TiO2 sol-gel and TiO2 nanoparticles exhibited no anatase and rutile peaks. The forward current of the Schottky diode drastically increased as the concentration of TiO2 nanoparticles increased up to 10 wt. % and decreased after that. The possible conduction mechanism is more likely space charge limited conduction.

The crystallinity and electrical characteristics of low density polyetylene thin film (저밀도 폴리에틸렌 필림의 결정화도 및 전기적 특성)

  • 윤중락;권정열;이헌용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.164-168
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    • 1996
  • The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

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Fabrication of PMMA-HfOx Organic-Inorganic Hybrid Resistive Switching Memory (PMMA-HfOx 유-무기 하이브리드 저항변화 메모리 제작)

  • Baek, Il-Jin;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.3
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    • pp.135-140
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    • 2016
  • In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

Natural Rubber Electrical Conduction Mechanism in High and Low Electric Fields (고전계와 저전계에서 천연고무의 전기전도기구)

  • Yun, Ju-Ho;Choi, Yong-Sung;Moon, Jong-Dae;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.307-308
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    • 2007
  • This work shows the experimental results obtained from ageing at a temperature of 100 C for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. Raw Natural rubber in Brazil is extracted from rubber trees (Hevea brasiliensis) in farms in So Paulo State by using some new plantation technology in smaller spaces, with trees placed a few meters from each other. In the Amazon rain forest the rubber trees are found naturally and their spacing may be of hundreds of meters or even kilometers between them. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

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A Technical Trend on Natural Rubber Electrical Conduction Mechanism (천연고무의 전기전도기구에 관한 기술 동향)

  • Baek, Jae-Wook;Son, Sang-Cheol;Kim, Young-Keun;Oh, Jae-Han;Kim, Hyung-Gon;Choi, Yong-Sung;Moon, Jong-Dae;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1970-1971
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    • 2007
  • The efficiency of such work highly depend on the worker's safety, who is protected by tools such as gloves, sleeves, blankets and flexible coverings among other manufactured natural-rubber goods. Use, storage and maintenance of these tools guarantee the quality and durability of the material. However, it might be observed that good tools made of such material are disapproved of when received from manufacturers or when they are removed from the warehouse for replacement. This work shows the experimental results obtained from ageing at a temperature of $100^{\circ}C$ for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

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