• 제목/요약/키워드: Source Characteristics

검색결과 6,528건 처리시간 0.034초

저압 모의선로에 소형발전원 연계시 특성 (Connected Characteristics for Small Generation Source of Low Voltage Model Grids)

  • 이상우;강진규;이동하;박태준
    • 조명전기설비학회논문지
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    • 제27권2호
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    • pp.45-53
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    • 2013
  • In this paper, we analyze the typical phase voltage and line current waveform characteristics of the distribution system with 3 phase small synchronous generation source in case with load and non-load group, in order to investigate the power quality for end load connected of generation source. As demonstrated by our experimental results, the distortion and power quality of phase voltage and line current waveform were relatively good for low voltage 3 phase model grids connected of 3 phase small synchronous generation source in case with non-load group. However, distortion and power quality of voltage and current waveform was poor for low voltage 3 phase model grids connected to 3 phase small synchronous generation source in the load group with some phase voltage and frequency difference. From the above results, we conclude that the phase voltage and frequency of 3 phase generation source must be identical to that of distribution system source to maximize the power quality. Also, special attention is required in case of having load group or non-load group to 3 phase generation source.

Characteristics of Critical Pressure for a Beam Shape of the Anode Type ion Beam Source

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • 제27권4호
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    • pp.65-69
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    • 2018
  • We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.

고속 스퍼터링 소스를 이용한 구리 후막 제조 및 특성 평가 (Characteristics of Cu Thick Films Deposited by High Rate Magnetron Sputtering Source)

  • 정재인;양지훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2008년도 추계학술대회 초록집
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    • pp.13-14
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    • 2008
  • A high rate magnetron sputtering source (HRMSS) was employed to deposit thick copper films. The HRMSS was manufactured by changing the magnet size, arrangement, and field intensity. For the preparation of thick copper films, the copper sputtering conditions using HRMSS were characterized based on the deposition parameters such as discharge characteristics, I-V characteristics of the source, and change of deposition rate. The deposition rate of copper turned out to be more than 5 times than that of conventional magnetron sputtering source. Thick copper films having thickness of more than $20{\mu}m$ were prepared by using HRMSS. The morphology and orientation of the films were investigated by scanning electron microscopy and x-ray diffraction.

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Four switch three-phase Z-source rectifier with improved switching characteristics

  • ANVAR, IBADULLAEV;Yoo, Dae-Hyun;Jung, Young-Gook;Lim, Young-Cheol
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2014년도 전력전자학술대회 논문집
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    • pp.301-302
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    • 2014
  • This paper describes four switch three-phase Z-source rectifier with improved switching characteristics. This configuration has some advantages switching loss and optimal drive circuit. The rectifier has buck-boost function by shoot-through state. Also, the rectifier has the advantage of decreasing inrush current in start-up and transient states. In order to reduce harmonics PWM modulation technique with a variable index has been suggested. Four switch three-phase Z-source rectifier with improved switching characteristics can output stable DC voltage at the same time decreasing the system's harmonic current. And also the paper presents an application of DCC method in Z-source rectifier. Principles and dynamics of the system are discussed in detail. After having viewed the results we can confirm that the proposed method is eligible and efficient.

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실리콘 선택적 결정 성장 공정을 이용한 Elevated Source/drain물 갖는 NMOSFETs 소자의 특성 연구 (A Study on the Device Characteristics of NMOSFETs Having Elevated Source/drain Made by Selective Epitaxial Growth(SEG) of Silicon)

  • 김영신;이기암;박정호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권3호
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    • pp.134-140
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    • 2002
  • Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.

이종(異種) 광원 조합에 의한 복수 광원의 분광 방사특성과 광달(光達) 거리 및 집어등 운용방법 (Characteristics of Spectral Irradiance Based on the Distance from the Light Source and Operating Method for Fishing Lamps with a Combined Light Source)

  • 최석진
    • 한국수산과학회지
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    • 제42권6호
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    • pp.711-720
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    • 2009
  • Characteristics of spectral irradiance based on the distance from the light source, which combined metal halide lamp and high-luminance light-emitting diode (LED) light, were studied to investigate a suitable operating method for fishing lamps of the next generation. A 380-780 nm wavelength radiation was superior when using 1 W electrical power in the order of metal halide lamp, blue LED, white LED, and combined LED lights. The wavelengths at which the irradiance was at a maximum were fixed to 581 nm for the light source, which was combined for each ratio. If the irradiance characteristics at 300-1100 nm wavelengths were set as 100%, the irradiance rates at 400-599 nm were 100%, 72.7%, 88.9%, and 69.5% for the blue, white, combined LED lights, and metal halide lamp, respectively. This indicated that the color rendering of the LED lights was dependent on the metal halide lamp light source. When the horizontal profiles (450-550 nm wavelength) of irradiances were compared to a different type of light source in the ratio white LED: combined LED lights: blue LED: metal halide lamp, the irradiated area of more than $0.01\;{\mu}mol/s/m^2/nm$ was in the ratio 1.0 : 1.3 : 1.7 : 37.3, respectively. Based on the radiation characteristics and irradiance according to the distance from the light source, LED lights have an estimated economic efficiency if used before and after operation of a metal halide lamp.

유역의 토지이용 특성을 고려한 비점오염원 관리방안 적용에 따른 저감 효율 분석 (Analysis of the Efficiency of Non-point Source Pollution Managements Considering the Land Use Characteristics of Watersheds)

  • 최유진;이서로;금동혁;한정호;박운지;김종건;임경재
    • 한국물환경학회지
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    • 제36권5호
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    • pp.405-422
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    • 2020
  • Land use change by urbanization has significantly affected the hydrological process including the runoff characteristics. Due to this situation, it has been becoming more complicated to manage non-point source pollutions caused by rainfall. In order to effectively control non-point sources, it is necessary to identify the reduction efficiency of the various management method based on land use characteristics. Thus, the purpose of this study is to analyze the reduction efficiency of non-point source pollution management practices targeting three different watersheds with the different land use characteristics using the Soil and Water Assessment Tool (SWAT). To do this, the vulnerable subwatersheds to non-point source pollution occurrence within each watershed were selected based on the streamflow and water quality simulation results. Then, considering the land use, low impact development (LID) or best management practices (BMPs) were applied to the selected subwatersheds and the efficiency of each management was analyzed. As a result of analysis of the non-point source pollution reduction efficiency, when LID was applied to urban areas, the average reduction efficiencies of SS, NO3-N, and TP were 5.92%, 4.62%, and 10.35%, respectively. When BMPs were applied to rural areas, the average reduction efficiencies of SS, TN and TP were 35.45%, 4.37%, and 10.16%, respectively. The results of this study can be used as a reference for determining appropriate management methods for non-point source pollution in urban, rural, and complex watersheds.

청양-홍성간 도로에서의 강우 시 비점오염 유출특성 및 오염부하량 분석 (Runoff Characteristics and Non-point Source Pollution Loads from Cheongyang-Hongseong Road)

  • 이춘원;강선홍;안태웅;양주경
    • 상하수도학회지
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    • 제25권2호
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    • pp.265-274
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    • 2011
  • Nowadays, the importance of non-point source pollution treatment is being emphasized. Especially, the easy runoff characteristic of highly concentrated pollutants in the roads makes the circumstance more complicated due to impermeability of roads. When the pollutants flow into steam it could make water quality in stream worse and it also causes a bad influence in the aquatic ecosystem because the effluents of rainfall-runoff may contain indecomposable materials like oil and heavy metals. Therefore, we tried to figure out the property of non-point source pollution when it is raining and carried out an assessment for the property of runoff for non-point source pollution and EMC (Event Mean Concentrations) of the essential pollutants during this study. As the result of the study, the EMC was BOD 5.2~21.7 mg/L, COD 7.5~35.4 mg/L, TSS 71.5~466.1 mg/L, T-N 0.682~1.789 mg/L and T-P 0.174~0.378 mg/L, respectively. The decreasing rate of non-point pollutant in Chungyang-Hongsung road indicates the maximum decrease of 80% until 5 mm of rainfall based on SS concentration; by the rainy time within 20~30 minutes, the decreasing rate of SS concentration was shown as 88.0~97.6%. Therefore it was concluded that it seems to be possibly control non-point pollutants if we install equipments to treat non-point pollutants with holding capacity of 30 min. It is supposed that the result of this study could be used for non-point pollutants treatment of roads in Chungyang-Hongsung area. We also want to systematically study and consistently prepare the efficient management of runoff from non-point source pollution and pollutant loading because the characteristics of non-point source pollution runoff changes depending on different characteristics and situations of roads and rainfall.

ST Quasi Z-소스 인버터의 스트레스 저감과 출력전압 특성 (Characteristics of the Stress Reduction and Output Voltage of ST(Switched Trans) Quasi Z-Source Inverter)

  • 김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제18권1호
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    • pp.1-9
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    • 2013
  • This paper proposes a ST(Switched Trans) quasi Z-source inverter using a Switched Trans Cell combing the characteristics of a Switched Inductor Cell and Trans. A DC link inductor of the conventional quasi Z-source inverter is alternated with Switched Trans Cell of the proposed ST quasi Z-source inverter. Trans Cell of the proposed method consists of one Trans and two diodes, and the proposed method has higher and more various boost function than the conventional quasi Z-source inverter by simply changing the turns ratio of primary and secondary of the Trans. The validity of the proposed ST Z-source inverter was confirmed by PSIM simulation and a DSP based experiment under the input voltage 48V and output phase voltage 30V. As a result, when compared with the traditional quasi Z-source inverter, the proposed method has the advantage of the low voltage stress under the same output voltage condition of the voltage.