• 제목/요약/키워드: Solution film thickness

검색결과 376건 처리시간 0.025초

Solution deposition planarization for IBAD-MgO texture template

  • Ko, Kyeong-Eun;Kwon, O-Jong;Bea, Sung-Hwan;Yoo, Ja-Eun;Park, Chan;Oh, Sang-Soo;Park, Young-Kuk
    • 한국초전도ㆍ저온공학회논문지
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    • 제12권4호
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    • pp.17-19
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    • 2010
  • In this work, the optimized process condition of chemical solution deposition which is used to planarize the surface of the metal tape (which is used to grow IBAD-MgO texture template) was investigated. $Y_2O_3$ films were dip-coated on the surface of the unpolished metal tape as the seed and barrier layer. The effects of $Y_2O_3$ concentration of the solution (0.5wt.%, 1.3wt.%, 2.8wt.%, 5.6wt.%) and the number of coatings on the surface morphology and barrier capability against the diffusion from the metal tape were examined. The surface morphology and the thickness of the film were observed using the scanning electron microscope and the atomic force microscope. The presence of elements in metal tape on the film surface was analyzed using the auger electron spectroscopy. The $Y_2O_3$ film thickness increases with increasing the $Y_2O_3$ concentration in the solution, and the surface became smoother with increasing the number of coating cycles. The best result was obtained from the $Y_2O_3$ film coated 4 cycles using 2.8wt.% solution.

The study of Design Surface Treatment Obtained Metal Color in Magnesium Alloy

  • Lee, Jung Soon;Lee, Hee Myoung
    • Applied Science and Convergence Technology
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    • 제26권2호
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    • pp.21-25
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    • 2017
  • The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

평판의 층류 막응축에서 복합열전달에 대한 근사해 (Approximate Solution for Conjugate Heat Transfer of Laminar Film Condensation on a Flat Plate)

  • 이억수
    • Journal of Advanced Marine Engineering and Technology
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    • 제29권5호
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    • pp.509-518
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    • 2005
  • Liquid film thickness in laminar film condensation for flow over a flat plate generally is so thin that both fluid acceleration and thermal convection within the liquid film can be neglected. An integral solution method is proposed to solve the conjugate problems of laminar film condensation and heat conduction in a solid wall. It is found that approximate solutions of the governing equations involve four physical parameters to describe the conjugate heat transfer problem for laminar film condensation. It is shown that the effects of interfacial shear. mass transfer and local heat transfer are strongly dependent on the thermo-physical properties of the working fluids and the Jacob number.

A Photochromic Dye Activation Method for Measuring the Thickness of Liquid Films

  • Kim, Jeong-Bae;Kim, Moo-Hwan
    • Bulletin of the Korean Chemical Society
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    • 제26권6호
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    • pp.966-970
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    • 2005
  • To measure the thickness of liquid films from 10 to 60 ${\mu}m$, we used photochromic dye activation. And we used silicone oil with 10 centi-Stokes and commercial photochromic dyes. To make films with exact and known thicknesses, we used two glass wafers. A film formed between two wafers after placing a drop of liquid of known volume on one wafer and covering the other. The film thickness could be estimated from the diameter of wafer and the dropped liquid volume. To quantitatively evaluate the result, captured the images using digital camera then analyzed the images using the image tool. The gray scale intensity using the captured images of activated dye with these thicknesses showed the repeatability below ${\pm}$ 1.0% when measured with a silicone oil solution containing 0.1% SO and SO-ANTH dyes. And we showed that photochromic dye activation method could be used to measure our liquid film thickness ranges.

공냉식 수직평판형 흡수기의 흡수과정에 대한 근사해법 (Approximate Solution of Absorption Process in an Air-Cooled Vertical Plate Absorber)

  • 정은수
    • 설비공학논문집
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    • 제6권4호
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    • pp.453-462
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    • 1994
  • An unsteady quasi one-dimensional model of momentum, heat and mass transfer in a falling film of a vertical plate absorber which is cooled by air was developed using the integral method. Energy conservation of the absorber wall is considered in the model. The model can predict absorption rate, film thickness and mean velocity as well as concentration and temperature profiles. Predictions of steady state temperature and concentration profiles for LiBr/water system for constant wall temperature condition are in good agreement with the two-dimensional finite difference method solutions. Effects of operating conditions, such as convective heat transfer coefficient between the cooling air and the absorber wall, cooling air temperature and film thickness at inlet, on absorption rate of water vapor into LiBr/water solution were shown.

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마이크로 부동액막을 이용한 착상방지에 관한 실험적 연구 (An Experimental Study on the Frost Prevention using Micro Liquid Film of an Antifreezing Solution)

  • 장영수;윤원남
    • 설비공학논문집
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    • 제17권5호
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    • pp.459-467
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    • 2005
  • The effect of anti freezing solution liquid film on the frost prevention is experimentally investigated. It is desirable that the antifreezing solution spreads widely on the heat exchanger surface forming thin liquid film to prevent frost nucleation and reduce the thermal resistance across the film. A porous layer coating technique is adopted to improve the wettedness of the anti freezing solution on a parallel plate heat exchanger. The antifreezing solution spreads widely on the heat exchanger surface with 100 $\mu$m thickness by the capillary force resulting from the porous structure. It is observed that the antifreezing solution liquid film prevents a parallel plate heat exchanger from frosting. The reductions of heat and mass transfer rate caused by thin liquid film are only $1\~2\%$ compared with those for non-liquid film surface.

Wafer Spin Coating 공정에서 증발과 용액이 박막 형성에 미치는 영향에 관한 연구 (A Numerical Study on Combined Solution and Evaporation during Spin Coating Process)

  • 노영미;임익태;김광선
    • 반도체디스플레이기술학회지
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    • 제2권1호
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    • pp.25-29
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    • 2003
  • The fluid flow, mass transfer, heat transfer and film thickness variation during the spin coating process are numerically studied. The model is said to be I-dimensional because radial variations in film thickness, concentration and temperature are ignored. The finite difference method is employed to solve the equations that are simplified using the similarity transformation. In early time, the film thinning is due to the radial convective outflow. However that slows during the first seconds of spinning so the film thinning due to evaporation of solvent becomes sole. The time varing film thickness is analyzed according to the wafer spin speed, the various solvent fraction in the coating liquid, and the various solvent vapor fraction in the bulk of the overlying gas during the spin coating is estimated.

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용액 공정을 이용한 IZO 트랜지스터의 전기적 성능에 대한 박막 두께의 영향 (Effect of Thin-Film Thickness on Electrical Performance of Indium-Zinc-Oxide Transistors Fabricated by Solution Process)

  • 김한상;경동구;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.469-473
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    • 2017
  • We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

캐비테이션 특성에 미치는 알루미늄 합금의 양극 산화 용액 온도의 영향 (Effect of Solution Temperature for Al Alloy Anodizing on Cavitation Characteristics)

  • 이승준;이정형;김성종
    • Corrosion Science and Technology
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    • 제14권3호
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    • pp.140-146
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    • 2015
  • The commercialization of aluminum had been delayed than other metals because of its high oxygen affinity. Anodizing is a process in which oxide film is formed on the surface of a valve metal in an electrolyte solution by anodic oxidation reaction. Aluminum has thin oxide film on surface but the oxide film is inhomogeneous having a thickness only in the range of several nanometers. Anodizing process increases the thickness of the oxide film significantly. In this study, porous type oxide film was produced on the surface of aluminum in sulfuric acid as a function of electrolyte temperature, and the optimum condition were determined for anodizing film to exhibit excellent cavitation resistance in seawater environment. The result revealed that the oxide film formed at $10^{\circ}C$ represented the highest cavitation resistance, while the oxide film formed at $15^{\circ}C$ showed the lowest resistance to cavitation in spite of its high hardness.

전압인가 LBL법을 이용한 (PDDA/SiO2) 박막 제조 (Fabrication of (PDDA/SiO2) Thin Film by an Applying Voltage Layer-By-Layer Self Assembly Method)

  • 박종국;경규홍;이미재;황종희;임태영;김진호
    • 한국재료학회지
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    • 제24권12호
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    • pp.715-719
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    • 2014
  • (PDDA/$SiO_2$) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged $SiO_2$ nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/$SiO_2$) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and $SiO_2$ solution, the thickness of the $(PDDA/SiO_2)_{10}$ thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and $SiO_2$ solution increased. Especially, when the voltage was applied to the Pt electrode in the $SiO_2$ solution, the thickness increase of the (PDDA/$SiO_2$) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/$SiO_2$) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/$SiO_2$)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.