• 한국진공학회지
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• 제10권1호
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• pp.61-66
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• 2001

$WO_3$ 박막은 졸겔방법으로 텅스텐 알코산화물 용액을 사용하여 마이크로 슬라이드유리와 ITO 유리기판위에 여러번 침적도포시켜 다층박막형으로 제작하였다. 침적도포와 시료제조 공정인자가 박막의 구조, 광학적 및 전기화학적 특성에 미치는 영향이 연구되었다. 텅스텐 알코산화물 용액을 사용하여 증착속도를 0.005m $s^{-1}$로 하여 제작된 박막은 매우 균일하였으나 증착속도를 0.007m $s^{-1}$ 보다 크게 하여 제작된 시료의 두께는 상당한 변화를 보였다. 전기화학적 착색 실험결과 박막은 $200^}\circ}C$보다 낮은 온도에서 열처리된 시료는 쉽게 착색이 되었다. 라더포드 후방산란법에 의해 착색된 시료에서의 $K^+$ 이온들은 막 속에 균일하게 분포되어 있었다.

• 전기학회논문지
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• 제62권8호
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• pp.1115-1119
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• 2013

The carbon nanotube/poly-vinylidene fluoride (CNT/PVDF) composite films for the use of electronic devices were fabricated by spray coating method using the CNT/PVDF solution, which was prepared by adding PVDF pellets into the CNT dispersed N-Methyl-2-pyrroli-done (NMP) solution. The CNT/PVDF composite films were peeled off from the glass substrate and were investigated by the scanning electron microscopy, which revealed that the CNTs were uniformly dispersed in the PVDF films and thickness of the films were approximately $20{\mu}m$. The capacitance of the CNT/PVDF films increased dramatically by adding CNTs into the PVDF matrix, and finally saturated approximately 1880 pF. However, the I-V curves didn't show any saturation effect in the CNT concentration range of 0 ~ 0.04 wt%. Therefore we can control the performance of the devices from the CNT/PVDF composite film by adjusting the current level resulted from the CNT concentration with the uniform capacitance value.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.620-623
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• 2013

The carbon nanotube / poly-vinylidene fluoride (CNT/PVDF) composite films for the nano-generator devices were fabricated by spray coating method using the CNT/PVDF solution, which was prepared by adding PVDF pellets into the CNT dispersed N-Methyl-2-pyrroli-done (NMP) solution. The flexible CNT/PVDF composite films were investigated by the scanning electron microscopy, which revealed that the CNTs were uniformly dispersed in the PVDF matrix and thickness of the films was approximately $20{\mu}m$. Fourier transform infra-red spectra were used to investigate crystal structure of the as-spray-coated CNT/PVDF films, and we found that they revealed extremely large portion of the ${\beta}$ phase PVDF. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the resistance didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Finally, the resulting nano-generator devices revealed reasonable current output after given mechanical stress.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• Journal of Magnetics
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• 제19권3호
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• pp.227-231
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• 2014

We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.187-187
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• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• 청정기술
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• 제18권1호
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• pp.57-62
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• 2012

폴리비닐알코올(PVA)을 증류수를 사용하여 용액으로 만든 후, 소수성을 가지는 비닐트리에톡시실란(VTEOS)을 이용하여 개질하였다. 실란으로 개질된 PVA 용액에 폴리아크릴산(PAA)을 함량별로 넣어 제조하였다. 다양한 PAA 함량에 따라 제조된 필름으로 열적-기계적 성질, 접촉각, 수분 투과율, 산소 투과율을 측정하였다. 필름의 유리 전이 온도는 비닐트리에톡시실란으로 개질한 경우 약간 높아졌으나, PAA의 함량에 따른 변화는 크게 나타나지 않았다. 비닐트리에톡시실란으로 개질된 PVA/ PAA 필름의 인장 강도는 9.48~10.72 $kg/mm^2$으로 PVA와 큰 차이가 나지 않았다. 비닐트리에톡시실란으로 개질된 PVA와 PAA의 비율이 90/10인 필름의 경우 팽윤도 198%, 용해도 10%로 측정되어 PVA에 비하여 내수성이 개선되었음을 확인할 수 있었다. 또한, 비닐트리에톡시실란으로 개질된 PVA와 PAA의 비율이 90/10인 필름(두께 2.5 ${\mu}m$)을 PET 필름(두께 50 ${\mu}m$) 위에 코팅하여 제조된 필름의 수분 투과율과 산소 투과율은 각각 11.04 $g/m^2/day$와 3.1 $cc/m^2/day$로 측정되었다.