• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.591-593
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• 1998

As evolution of the process technology, we proposed the Over-The-Cell channel routing algorithm for the advanced three-layer process. The proposed algorithm simplifies the channel routing problem, and then makes use of Simulated Annealing Technique to converge at global optimal solution. Also, we proposed a new method to remove the cyclic vertical constraints which are known to be the hardest element in the channel routing problem and a way to detect the local minimal solution and escape from it successfully.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.631-635
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• 2017

We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.149-154
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• 2017

Transparent conducting oxides (TCOs) were fabricated using solution-based ITO (Sn-doped $In_2O_3$) nanoinks with nanorods at an annealing temperature of $200^{\circ}C$. In order to optimize their transparent conducting performance, ITO nanoinks were composed of ITO nanoparticles alone and the weight ratios of the nanorods to nanoparticles in the ITO nanoinks were adjusted to 0.1, 0.2, and 0.5. As a result, compared to the other TCOs, the ITO TCOs formed by the ITO nanoinks with weight ratio of 0.1 were found to exhibit outstanding transparent conducting performance in terms of sheet resistance (${\sim}102.3{\Omega}/square$) and optical transmittance (~80.2 %) at 550 nm; these excellent properties are due to the enhanced Hall mobility induced by the interconnection of the composite nanorods with the (440) planes of the short lattice distance in the TCOs, in which the presence of the nanorods can serve as a conducting pathway for electrons. Therefore, this resulting material can be proposed as a potential candidate for solution-based TCOs for use in optoelectronic devices requiring large-scale and low-cost processes.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.503-506
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• 2008

The effect of silver nanoparticles (NPs) incorporation on the electronic properties of poly (3, 4-ethylenedioxythiphene) : poly(styrenesulfonate) (PEDOT : PSS) films was investigated. The surface of silver NPs was stabilized with trisodium citrate to control the size of silver NPs and prevent their aggregation. We obtained ca. 5 nm sized silver NPs and dispersed NPs in PEDOT : PSS solution. Sheet resistance, surface morphology, bonding state, and work function values of the PEDOT : PSS films were modified by silver NPs incorporation as well as annealing temperature. Sodium in silver NPs solution could lead to a decrease of work function of PEDOT : PSS; however, large content of silver NPs have an effect on the increase in work function, resulting from charge localization on the silver NPs and a decrease in the number of charge-trapping-related defects by chemical bond formation.

• IE interfaces
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• v.10 no.2
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• pp.1-13
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• 1997

The problem of the formation of machine-part cells in FMS is a very important issue at the planning and operating stages of FMS. This problem is inherently a combinatorial optimization problem, proven to be NP-complete(or, NP-hard). Among the several kinds of approaches which have been applied to solve the combinatorial optimization problems, the Simulated Annealing(SA) algorithm, a technique of random search type with a flexibility in generating alternatives, is a powerful problem solving tool. In this paper, the SA algorithm is used to solve machine cell-part family formation problems. The primary purpose of the study is to find the near-optimal solution of machine cell-part family formation problem, whare the product volume and number of operations are prespecified, that can minimize the total material handling cost caused by exceptional elements and intercell moves as much as possible. The results show that the SA algorithm is able to find a near-optimal solution for practical problems of the machine cell-part family formation.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.267-271
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• 2003

In this work, chemical solution derived Ca-doped zirconia fiber has been prepared by using calcium- and zirconium-naphthenate. Fibrous $ZrO_2$-CaO was drawn from a sticky mixture. Dried gel fibers were finally annealed at $1000^{\circ}C$ for 1 h in argon. 91 mol%$ZrO_2$-9 mol%CaO fiber consisted of tetragonal, monoclinic and $CaZrO_3$ phases after annealing at $1000^{\circ}C$. On the other hand, samples annealed at $500^{\circ}C$ consisted of almost tetragonal single phase. Homogeneous fibers surface at $500^{\circ}C$ became rougher after $1000^{\circ}C$-annealing. The sample annealed at $1000^{\circ}C$ with relatively rough surface structure showed a high Calcium phocphate forming ability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• Journal of Powder Materials
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• v.22 no.6
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• pp.432-437
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• 2015

The en-riched $^{58}Ni$ powders are dissolved in acid solution and coated on a Cu target for proton irradiation at cyclotron to produce $^{57}Co$ radioisotope. The condition of the plating bath and the coating process are determined using the en-riched powders. To establish the coating conditions for $^{57}Co$, non-radioactive Co ions are dissolved in an acid solution and electroplated on to a rhodium plate. The thermal diffusion of electroplated Co into a rhodium matrix was studied to apply a $^{57}Co$ Mssbauer source. The diffusion depth from surface to matrix of Co is depended on the annealing temperature and time. The deposited Co atoms diffuse completely into a rhodium (Rh) matrix without substantial loss at an annealing temperature of 1200 for 4 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.