• Bulletin of the Korean Chemical Society
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• v.27 no.6
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• pp.821-829
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• 2006

A series of catalysts, $NiO/La_2O_3-ZrO_2/WO_3$, for acid catalysis was prepared by the precipitation and impregnation methods. For the $NiO/La_2O_3-ZrO_2/WO_3$ samples, no diffraction lines of nickel oxide were observed, indicating good dispersion of nickel oxide on the catalyst surface. The catalyst was amorphous to X-ray diffraction up to 300 ${^{\circ}C}$ of calcination temperature, but the tetragonal phase of $ZrO_2$ and monoclinic phase of $WO_3$ by the calcination temperatures from 400 ${^{\circ}C}$ to 700 ${^{\circ}C}$ were observed. The role of $La_2O_3$ in the catalyst was to form a thermally stable solid solution with zirconia and consequently to give high surface area and acidity. The high acid strength and high acidity were responsible for the W=O bond nature of complex formed by the modification of $ZrO_2$ with $WO_3$. For 2-propanol dehydration the catalyst calcined at 400 ${^{\circ}C}$ exhibited the highest catalytic activity, while for cumene dealkylation the catalyst calcined at 600 ${^{\circ}C}$ showed the highest catalytic activity. 25-$NiO/5-La_2O_3-ZrO_2/15-WO_3$ exhibited maximum catalytic activities for two reactions due to the effects of $WO_3$ modifying and $La_2O_3$ doping.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2556-2566
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• 2023

A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U_1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC_1-x, Zr_xU_1-xC, Mo_xU_1-xC, and Rh_xU_1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (α_V) and heat capacity (C_p) of UC predicted by the quasi harmonic approximation (QHA) method.

• Fashion & Textile Research Journal
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• v.21 no.3
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• pp.363-369
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• 2019

This study developed electroconductive textiles by coating polypyrrole to PET nonwoven-based Polyvinyl Alcohol (PVA) nanoweb made by electrospinning and applying the developed electrotextiles as ECG Electrodes. To find the optimum coating conditions for high electrical conductivity, the ratios of 2.6-Naphthalenedisulfonic acid with Disodium Salt (NDS) vs Ammonium Persulfate (APS) as an oxidant and a doping agent in the solution were changed from 3:7 to 7:3; the immersion time of the specimen in the solution was 1 hour. PVA nanowebs coated with polypyrrole under various conditions were filmed with FE-SEM. FT-IR analysis was also performed to examine the presence of polypyrrole nanoparticles in the PVA nanoweb. The electrical resistance of the treated specimens were measured with a Multimeter. Consequently, the PVA Nano Web was undamaged even after heat treatment that allowed for coating. Uniform polypyrrole nanoparticles then formed on the surface of the PVA nanoweb after coating. The measured electrical resistance was shown to be at least $12K{\Omega}/{\Box }$ from a maximum of $3,456K{\Omega}/{\Box }$. The proper amount of NDS content had a positive effect on the conductivity improvement of electroconductive textiles; in addition, the highest electrical conductivity was achieved with a ratio of 3:7 between NDS and APS.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.149-155
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• 1997

We have successfully grown colorless and transparent Rb-doped potassium niobate (KRN) single crystals using the top seeded solution growth(TSSG) technique. In our crystal growth experiments, the Rb doping concentrations within the melt range from 2-15 mol% relative to that of Nb$_2$O5. Atomic absorption measurements indicate that the Rb content in the KRN solid solution is rather low; the Rb segregation coefficient is found to be on the order of 0.05. It is believed that this is due to the relatively much larger Rb+ ionic radius compared to that of K+, rendering it more difficult for Rb to replace K in the KNbO$_3$(KN) host lattice. Preliminary single-pass second harmonic generation (SHG) experimental results indicate that there exists marginal improvement in the phase-matching temperature tolerance of KRN compared to that of pure Kn single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.161-164
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• 1997

Thin films of CdS were prepared from an aqueous solution containing Cd(Ac)$_2$, NH$_4$OH, NH$_4$Ac and (NH$_2$)$_2$CS for photovoltaic application. Growth rate of CdS films was increased with increasing temperature of reactive solution and with decreasing concentration of NH$_4$OH. Optical transmittances were more than 60%, independent with temperature and concentrations, and were changed with thickness of CdS films. Growth films mostly showed the presence of polycrystallines with mixed cubic and condition. The resistivities of CdS were decreased by doping boron and criticial amount of dopant was determined.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.803-805
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• 2009

A highly efficient blue organic light-emitting diode (OLED) was fabricated by using a novel polymer host, poly[3-(carbazol-9-ylmethyl)-3-methyloxetane]. The resultant solution-processed device showed a markedly high efficiency of 29.7 lm/W at 100 cd/$m^2$ by doping 24 wt% blue dye bis(3,5-difluoro-2-(2-pyridyl)-phenyl-(2-carboxy pyridyl) iridium (III).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.570-573
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• 1999

High brightness (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu Phosphor Particles were directly Prepared in the spray Pyrolysis by adding flux materials such as LiCl and HBO$_3$. The (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu particles prepared from solution with flux material had higher PL (photoluminescence) intensities than those prepared from solution without flux. In the spray pyrolysis, the flux acts as promoter of the growth of crystallite and activation of doping material as in the solid state reaction method. Additionally, the flux improved PL intensity of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles by densifying the internal structure and eliminating the defect existing inside and surface of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles.r particles.