• 제목/요약/키워드: Solution Doping

검색결과 220건 처리시간 0.033초

Polyaniline/Polyimide 혼합막의 기체 분리 특성 (Gas Separation Properties of Polyaniline/Polyimide Blend Membranes)

  • 이기섭;김진환
    • 공업화학
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    • 제18권5호
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    • pp.483-489
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    • 2007
  • Polyaniline (PANI)/Polyimide (PI) 혼합막을 제조하여 PANI 함량과 doping처리가 막의 구조적 특성과 기체 분리 특성에 미치는 영향을 연구하였다. NMP를 용매로 하여 6FDA와 ODA를 반응시켜 얻어진 polyamic acid (PAA) 용액과 PANI 용액을 혼합하여 PANI/PI 혼합막을 얻었다. 얻어진 PANI/PI 막을 1M의 HCl 수용액에서 24시간 doping처리하여 doped PANI/PI 혼합막을 제조하였다. 제조한 막은 FT-IR과 XRD 및 TGA에 의하여 구조적 특성을 분석하였고, $30^{\circ}C$와 5 atm에서 압력변화법으로 $H_2$, $O_2$, $CO_2$, $N_2$$CH_4$에 대한 기체 투과 특성을 조사하였다. PANI/PI 혼합막은 PANI와 PI의 흡수특성을 잘 보여주었고 PANI보다 열적 안정성이 향상되었으며, PANI의 함량이 증가할수록 d-spacing은 감소하였다. PANI/PI 혼합막에서 기체의 투과도계수는 PANI의 함량이 증가함에 따라 감소하였으며 투과도 계수의 크기는 $H_2$ > $O_2$ > $CO_2$ > $N_2$ > $CH_4$의 순서였다. PANI/PI막을 doping처리하면 투과도계수는 감소하나 투과선택도는 향상되었다. 특히 doping한 PANI/PI (75/25)막에서 $H_2/CH_4$의 선택도는 991을 나타내었다.

Atomization 방법을 이용한 PbTe quantum dots이 함유된 비선형 광섬유의 제조 및 광특성 (Fabrication of Nonlinear Optical Fiber Doped with PbTe Quantum Dots Using Atomization Doping Process and its Optical Property)

  • 주성민;이수남;김택중;한원택
    • 한국광학회:학술대회논문집
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    • 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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    • pp.360-361
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    • 2004
  • An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.

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Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

  • Woo, Dong-Chan;Koo, Chang-Young;Ma, Hong-Chan;Lee, Hee-Young
    • Transactions on Electrical and Electronic Materials
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    • 제13권5호
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    • pp.241-244
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    • 2012
  • Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

TFA-MOD공정에서 $BaCeO_3$ 첨가에 의한 $YBa_2Cu_3O_{7-\delta}$ 박막의 임계전류밀도 증가 (Enhancement of critical current density in $BaCeO_3$ doped $YBa_2Cu_3O_{7-\delta}$ thin Films deposited by TFA-MOD process)

  • 이종범;김병주;이희균;홍계원
    • 한국초전도ㆍ저온공학회논문지
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    • 제10권1호
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    • pp.1-5
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    • 2008
  • The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

Simple Route to High-performance and Solution-processed ZnO Thin Film Transistors Using Alkali Metal Doping

  • 김연상;박시윤;김경준;임건희
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.187-187
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    • 2012
  • Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.

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박막의 그래핀 도핑 효과와 접합 특성 (Graphene Doping Effect of Thin Film and Contact Mechanisms)

  • 오데레사
    • 한국재료학회지
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    • 제24권3호
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    • pp.140-144
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    • 2014
  • The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

Fluorine-Doping Effect on Structural and Optical Properties of ZnO Nanorods Synthesized by Hydrothermal Method

  • Yoon, Hyunsik;Kim, Ikhyun;Kang, Daeho;Kim, Soaram;Kim, Jong Su;Lee, Sang-Heon;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.204.1-204.1
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    • 2013
  • Fluorine, the radius of which is close to that of oxygen, could be an appropriate anion doping candidate. A lower lattice distortion could be expected for F doping, compared with Al, Ga, and In doping. F-doped ZnO (FZO) and undoped ZnO nanorods were grown onto glass substrate by the hydrothemal method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0.0 to 10.0 in 2.0 steps. To investigate the effects of the structure and optical properties of FZO nanorods were investigated using X-ray diffraction, UV-visible spectroscopy and photoluminescence (PL). For the PL spectra, the maximum peak position of NBE moves to higher energy, from 0 to 4 at.%. As the doping concentration increases, the maximum peak position of NBE gradually moves to lover energy, from 4 to 10 at.%.

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내부 도핑 법에 의한 Cu 도핑 Cu:ZnSe 양자점의 수계 합성 및 발광 특성 (Aqueous Synthesis and Luminescent Characteristics of Cu:ZnSe Quantum Dots by Internal Doping Method)

  • 백금지;홍현선
    • 한국분말재료학회지
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    • 제29권5호
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    • pp.370-375
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    • 2022
  • Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu2+ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of color-tuned ZnSe quantum dots for display applications.

Solution Dynamics Studies for the Lck SH2 Domain Complexed with Peptide and Peptide-Free Forms

  • Yoon, Jeong-Hyeok;Chi, Myung-Whan;Yoon, Chang-No;Park, Jongsei
    • 한국응용약물학회:학술대회논문집
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    • 한국응용약물학회 1995년도 춘계학술대회
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    • pp.81-81
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    • 1995
  • It is well known that Src Homology 2(SH2) domain in many intracellular signal transduction proteins is very important. The domain has about 100 amino acid residues and bind phosphotyrosine-containing peptide with high affinity and specificity. Lck SH2 domain is a Src-like, lymphocyte-specific tyrosine kinase. An 11-residue phosphopeptide derived from the hamster polvoma middle-T antigen, EPQp YEEIPIYL, binds with an 1 nM dissociation constant to Lck SH2 domain. And it is known that the phosphotyrosine and isoleucine residues of the peptide are tightly bound by two well-defined pockets on Lck SH2 domain's surface. To investigate the conformational changes during complexation of SH2 domain with phosphopeptide we have performed the molecular dynamics simulation for Lck SH2 domain with peptide and peptide-free form at look in aqueous solution. More than 3000 water molecules were incorporated to solvate Lck SH2 domain and peptide. Periodic boundary condition has been applied in molecular dynamics simulation. Data analysis with the results of that simulation shows that the phosphopeptide makes primary interaction with the Lck SH2 domain at six central residues, The comparison of the complexed and uncomplexed SH2 domain structures in solution has revealed only relatively small change. But the hydrophilic and hydrophobic pockets in the protein surface show the conformational changes in spite of the small structural difference between the complex and peptide-free forms.

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Substituent Effects on Conformational Changes in (+)-CSA Doped Polyaniline Derivatives

  • Lee, Eung;Kim, Eunok
    • Bulletin of the Korean Chemical Society
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    • 제34권7호
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    • pp.2111-2116
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    • 2013
  • This paper reports substituent effects on the conformational changes in polyaniline (PAni) derivatives. PAni, poly-o-toluidine (POT), and poly-o-anisidine (POA) were formed by potentiodynamic electropolymerization in aqueous solution containing (+)-camphorsulfonic acid (CSA) as a dopant. UV-Vis spectroscopy and cyclic voltammetry measurements revealed that the methyl group showed a greater steric hindrance than the methoxy group. Further, the doping level decreased with increasing steric hindrance. The sign pattern of the circular dichroism (CD) bands for POA was opposite to that for PAni. However, no CD bands were observed in POT. The steric hindrance caused helical inversion, but at a high level of steric hindrance, the helical conformation could not be adopted, because of the reduced doping level. The reduced crystallinity was greatly affected by the decreased doping level. The steric effect influenced the polymer conformation and the doping level, thus determining the optical activity, morphology, and crystallinity of the PAni derivatives.