• 멤브레인
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• 제26권3호
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• pp.187-196
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• 2016

최근 정삼투(FO) 공정의 성능향상을 위해 유입수에 낮은 수압을 가하는 가압형 정삼투(PAFO) 공정이 관심을 받고 있다. Structure parameter는 FO 및 PAFO 공정 운전시 유도용질의 확산 저항성(Solute resistivity)을 결정하며, 이는 Solution-diffusion model (S-D model)을 통한 수투과 및 염투과 성능 예측을 지배하는 인자 중에 하나이다. 본 연구는 S-D model을 이용하여 가압형 정삼투시 유입수 측에 가해지는 압력에 따른 Structure parameter 변화 양상을 예측하고자 하였다.

• 한국물환경학회지
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• 제28권2호
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• pp.292-299
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• 2012

The objective of this study is to develop a novel method for evaluating forward osmosis (FO) membrane performances using a non-pressurized FO system. Basic membrane performance parameters including water (A) and solute (B) permeability coefficients and unique parameter for FO membrane such as the support layer structural parameter (S) were determined in two FO modes (i.e., active layer faces feed solution (AL-FS) and active layer faces draw solution (AL-DS)). Futhermore, these parameters were compared with those determined in a pressurized reverse osmosis (RO) system. Theoretical water flux was calculated by employing these parameters to a model that accounts for the effects of both internal and external concentration polarization. Water flux from FO experiment was compared to theoretical water fluxes for assessing the reliability of those parameters determined in three different operation modes (i.e., AL-FS FO, AL-DS FO, and RO modes). It is demonstrated that FO membrane performance parameters can be accurately measured in non-pressurized FO mode. Specifically, membrane performance parameters determined in AL-DS FO mode most accurately predict FO water flux. This implies that the evaluation of FO membrane performances should be performed in non-pressurized FO mode, which can prevent membrane compaction and/or defect and more precisely reflect FO operation conditions.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.291-297
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• 1995

The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm$\^$-2/ of first freeze part to 6.7*10$\^$4/cm$\^$-2/ of last freeze part and the radial direction of wafer shows nearly uniform distribution. The resistivity and the carrier concentration of the grown crystals are 1.43*10$\^$-1/.ohm.-cm, 7.7*10$\^$15/cm$\^$-3/ at room temperature, respectively. In the photolurninescence at 10K, the radiation transitions are observed by the near band edge recombination, a pair recombination due to Si donor - Zn acceptor and its phonon replica in the InP. The activation energy by Zn diffusion in undoped n-InP crystals is 1.22eV.