• Title/Summary/Keyword: Solid-State Reaction

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Structure and Magnetic Properties of Ho and Ni Co-doped BiFeO3 Ceramics

  • Hwang, J.S.;Yoo, Y.J.;Park, J.S.;Kang, J.H.;Lee, K.H.;Lee, B.W.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.183-183
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    • 2014
  • Recently, multiferroic materials gain much attention due to their fascinating fundamental physical properties. These materials offer wide range of potential applications such as data storage, spintronic devices and sensors, where both electronic and magnetic polarizations can be coupled. Among single-phase multiferroic materials, $BiFeO_3$ is typical because of the room-temperature magnetoelectric coupling in view of long-range magnetic- and ferroelectric-ordering temperatures. However, $BiFeO_3$ is well known to have large leakage current and small spontaneous polarization due to the existence of oxygen vacancies and other defects. Furthermore the magnetic moment of pure $BiFeO_3$ is very weak owing to its antiferromagnetic nature. Recently, various attempts have been performed to improve the multiferroic properties of $BiFeO_3$ through the co-doping at the A and the B sites, by making use of the fact that the intrinsic polarization and magnetization are associated with the lone pair of $Bi^{3+}$ ions at the A sites and the partially-filled 3d orbitals of $Fe^{3+}$ ions at the B sites, respectively. In this study, $BiFeO_3$, $Bi_{0.9}Ho_{0.1}FeO_3$, $BiFe_{0.97}Ni_{0.03}O_3$ and $Bi_{0.9}Ho_{0.1}Fe_{0.97}Ni_{0.03}O_3$ bulk compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Ho_2O_3$, $Fe_2O_3$ and $NiO_2$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h to produce the samples. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent and temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer and superconducting quantum-interference device.

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Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조)

  • Seok, Hye-Won;Kim, Sei-Ki;Lee, Hyun-Seok;Lim, Tae-Young;Hwang, Jong-Hee;Choi, Duck-Kyun
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

Photoluminescent Properties of $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn Green Phosphors doped with Ga (Ga 도핑된 $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn 녹색 형광체의 발광특성)

  • Park, Eung-Seok;Jang, Ho-Jeong;Jo, Tae-Hwan
    • Korean Journal of Materials Research
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    • v.8 no.9
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    • pp.860-864
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    • 1998
  • We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

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A Study on the Luminescence Properties of LiGd9(SiO4)6O2:Ce3+ (LiGd9(SiO4)6O2:Ce3+ 형광 특성 연구)

  • Jin, Seongjin
    • Journal of the Korean Society of Radiology
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    • v.9 no.3
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    • pp.169-174
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    • 2015
  • $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ phosphors were synthesized by solid-state reaction method. The structural characteristic was investigated by X-ray powder diffraction analysis. The emission and excitation spectra of the $Ce^{3+}$ ions doped $LiGd_9(SiO_4)_6O_2$ phosphors were obtained under the UV excitation. The emission spectra of $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ shows the band at 410 nm corresponding to the $^2F_{5/2}$ and $^2F_{7/2}$ states of $Ce^{3+}$. The red shift of $Ce^{3+}$ emission is found as the $Ce^{3+}$ concentration increases, which could be explained by the change in crystal-field symmetry and strength with increasing $Ce^{3+}$ concentration. Fluorescence decay time of $Ce^{3+}$ was about 20 ns. When the concentration of $Ce^{3+}$ increases life time was slightly reduced.

Improved Physical Properties of Ni-doped $BiFeO_3$ Ceramic

  • Yoo, Y.J.;Park, J.S.;Kang, J.H.;Kim, J.;Lee, B.W.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.250-250
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    • 2012
  • Recently, multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and potential technological applications in magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because of its very interesting magnetoelectric properties for application to spintronics. Enhanced ferromagnetism was found by Fe-site ion substitution with magnetic ions. In this study, $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Fe_3O_4$ and NiO powders were mixed with the stoichiometric proportions, and calcined at $450^{\circ}C$ for 24 h to produce $BiFe_{1-x}Ni_xO_3$. Then, the samples were directly put into the oven, which was heated up to $800^{\circ}C$ and sintered in air for 20 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The Raman measurements were carried out with a Raman spectrometer with 514.5-nm-excitation Ar+-laser source under air ambient condition on a focused area of $1-{\mu}m$ diameter. The field-dependent magnetization and the temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The x-ray diffraction study demonstrates the compressive stress due to Ni substitution at the Fe site. $BiFe_{0.95}Ni_{0.05}O_3$ exhibits the rhombohedral perovskite structure R3c, similar to $BiFeO_3$. The lattice constant of $BiFe_{0.95}Ni_{0.05}O_3$ is smaller than of $BiFeO_3$ because of the smaller ionic radius of Ni3+ than that of Fe3+. The field-dependent magnetization of $BiFe_{0.95}Ni_{0.05}O_3$ exhibits a clear hysteresis loop at 300 K. The magnetic properties of $BiFe_{0.95}Ni_{0.05}O_3$ were improved at room temperature because of the existence of structurally compressive stress.

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Luminescence Properties of La2MoO6:RE3+ (RE = Eu, Sm) Phosphors Subjected to the Different Concentrations of Activator Ions (활성제 이온의 농도 변화에 따른 La2MoO6:RE3+ (RE = Eu, Sm) 형광체의 발광 특성)

  • Kim, Gayeon;Shin, Johngeon;Cho, Shinho
    • Journal of Surface Science and Engineering
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    • v.50 no.4
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    • pp.282-288
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    • 2017
  • $Eu^{3+}$- or $Sm^{3+}$-doped $La_2MoO_6$ phosphors were synthesized with different concentrations of activator ions via a solid-state reaction. The X-ray diffraction patterns exhibited that crystalline structures of all the phosphors were tetragonal systems with the dominant peak occurring at (103) plane, irrespective of the concentration and the type of activator ions. The crystallites showed the pebble-like crystalline shapes and the average crystallite size increased with a tendency to agglomerate as the concentration of $Eu^{3+}$ ions increased. The excitation spectra of $Eu^{3+}$-doped $La_2MoO_6$ phosphors contained an intense charge transfer band centered at 331 nm in the range of 250-370 nm and three weak peaks at 381, 394, and 415 nm, respectively, due to the $^7F_0{\rightarrow}^5L_7$, $^7F_0{\rightarrow}^5L_6$, and $^7F_0{\rightarrow}^5D_3$ transitions of $Eu^{3+}$ ions. The emission spectra under excitation at 331 nm exhibited a strong red band centered at 620 nm and two weak bands at 593 and 704 nm. As the concentration of $Eu^{3+}$ increased from 1 to 20 mol%, the intensities of all the emission bands gradually increased. For the $Sm^{3+}$-doped $La_2MoO_6$ phosphors, the emission spectra consisted of an intense emission band at 607 nm arising from the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition and three relatively small bands at 565, 648, and 707 nm originating from the $^4G_{5/2}{\rightarrow}^6H_{5/2}$, $^4G_{5/2}{\rightarrow}^6H_{9/2}$, and $^4G_{5/2}{\rightarrow}^6H_{11/2}$ transitions of $Sm^{3+}$, respectively. The intensities of all the emission bands approached maxima when concentration of $Sm^{3+}$ ions was 5 mol%. These results indicate that the optimum concentrations for highly-luminescent red and orange emission are 20 mol% of $Eu^{3+}$ and 5 mol% of $Sm^{3+}$ ions, respectively.

Effects of Surface Microstructure on Microwave Dielectric Properties of ZrO2-NiO added Ba(Zn1/3Ta2/3)O3 Ceramics (ZrO2와 NiO가 첨가된 Ba(Zn1/3Ta2/3)O3에서 표면 미세조직이 고주파 유전특성에 미치는 영향)

  • Kang, Sung-Woo;Kim, Tae-Heui;Moon, Joo-Ho;Kim, Sung-Youl;Park, Jun-Young;Choi, Sun-Hee;Kim, Joo-Sun
    • Journal of the Korean Ceramic Society
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    • v.45 no.11
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    • pp.701-706
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    • 2008
  • High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

Studies on the Preparation of Organic Compounds Labelled by $^{38}Cl$.(I) - Inorganic Yields of $^{38}$ Cl in Szilard Chalmer Reaction of Aromatic Chloro Derivatives

  • Kim, You-Sun
    • Nuclear Engineering and Technology
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    • v.5 no.1
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    • pp.44-54
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    • 1973
  • In order to clarify an effective procedure of labelling organic chloro compounds by $^{38}$ Cl, phenyl chloro derivatives(7 kinds), chloro nitrobenzenes(6 kinds), chloro anisoles(2 kinds), chloro anilines(3 kinds), chloro toluenes(3 kinds), benzyl cholorides(4 kinds), and other comparing samples(3 kinds) were irradiated in the TRIGA Mark-II research reactor and the inorganic $^{38}$ Cl yields were compared with the irradiation times after extracting the inorganic portion with an aqueous solution of alkali. It was found that the relative change between the inorganic $^{38}$ Cl yield and the irradiadiation time depends a great deal on the state of the sample, and a solid sample gave a lower and steady inorganic yield. The inorganic $^{38}$ Cl yield was decreased in the order of phenyl chloro derivatives < chloro tol uene$^{38}$ Cl yield of homo functional compounds and the number of chlorine atoms on the benzene ring. Generally, poly chloro substituted derivatives could give a higher yield than those of less chloro substituted. The results were discussed and the feasibility of these results for labelling purpose was criticized.

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Syntheses, Dielectric Properties and Ordering Structures of $Pb(Fe _{1/2}Ta_{1/2})O_3$ ($Pb(Fe _{1/2}Ta_{1/2})O_3$의 합성, 유전특성 및 질서배열구조)

  • 우병철;김병국;김병호
    • Korean Journal of Crystallography
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    • v.13 no.3_4
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    • pp.165-171
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    • 2002
  • Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$, ceramics were successfully synthesized from the powders prepared by solid state reaction (sintering temperature: $1100^{\circ}C$, density: $9.3g/cm^3$, average grain size: $5.1{\pm}1.2mm$, space group: Pm3m). Their dielectric properties measured at $-150{\sim}50^{\circ}C$ showed the maximum relative dielectric constant of 31000 at $-41^{\circ}C$. 1 kHz, and typical relaxor ferroelectrics characteristics such as diffuse phase transition and dielectric relaxation phenomena. However, the diffuseness of phase transition decreased and the dielectric properties became more normal ferroelectrics as the time of annealing at $1000^{\circ}C$ increased. By using Raman spectroscopy, it was revealed that the $Fe^{3+}$ and $Ta^{5+}$ ions in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, are stoichiometrically 1 : 1 ordered within the short-range that can not be probed even by transmission electron microscopy, and this stoichiometric 1 : 1 ordering is enhanced by the annealing. The relaxor ferroelectric characteristics in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, could be correlated with the stoichiometric 1 : 1 short-range ordering of B-site cations, and the decrease of relaxor ferroelectric characteristics in the annealed $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the enhanced stoichiometric 1 : 1 short-range ordering of B-site cations.

Effect of the Oxygen Partial Pressure on the Phase Stability of ${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$ and ${Bi_2}{Sr_2}{Ca_2}{Cu_3}{O_{10+x}}$ (${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$${Bi_2}{Sr_2}{Ca_2}{Cu_3}{O_{10+x}}$의 상 안정성에 대한 산소분압의 영향)

  • Park, Min-Su;Lee, Hwa-Seong;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • v.5 no.5
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    • pp.583-597
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    • 1995
  • We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

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