• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.44-48
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• 2000

Amorphous $V_2O_5$ cathode thin films were prepared by DC-magnetron sputtering at room temperature and the thin film rechargeable lithium batteries were fabricated with the configuration of $V_2O_5/LIPON/Li$ using sequential ex-situ thin film deposition techniques. The electrochemical characteristics of $V_2O_5$ cathode materials Prepared at 80/20 of $Ar/O_2$ ratio showed high capacity and cycling behaviors by half cell test. LIPON solid electrolytes films were prepared by RF-magnetron sputtering using the self-made $Li_3PO_4$ target in pure $N_2$ atmosphere, and it was very stable for lithium contact in the range of 1.2-4.0 V vs. Li. Metallic lithium were deposited on LIPON electrolyte by thermal evaporation methode in dry room. Vanadium oxide based full cell system showed the initial discharge capacity of $150{\mu}A/cm^2{\mu}m$ in the range of $1.2\~3.5V$.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.6
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• pp.743-748
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• 2022

The initial operation stability of hydrogen-fueled, solid oxide fuel cell with Ni thin-film anode fabricated by direct current sputtering was evaluated in terms of electrochemical properties such as peak power density, open circuit voltage, overpotential, and alternating current impedance at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.791-798
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• 1999

The preparation method of yttria-stabilized zirconia(YSZ) thin film for an anode support type solid oxide fuel cell(SOFC) by electrophoretic deposition(EPD) and dip-coating was studied. And the difference in both preparation method was investigated through basic understanding of processing parameters which may significantly affect weight microstruxcture and defect of film. In dip-coating the thickness of film increased with time until 30 s and then the weight of film decreased with time due to particle falling off from the coagulated film. In EPD although the weight of film increased with time and applied constant-current sagging of the film was observed when the applied current was less that 0.035 mA/$cm^2$ and more than 120 s. Since YSZ thin film by EPD on porous substrate was dense smooth and homogeneous it was expected to be suitable for the electrolyte of an anode support type SOFC.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.130-133
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• 2009

$Cu_2ZnSnSe_4$(CZTSe) is one of the promising materials for the solar cell due to its abundant availability in the nature. In this study, we report the fabrication of CZTSe thin film by Pulsed Laser Deposition(PLD) method using quaternary compound target on sodalime glass substrate. The quaternary CZTSe compound target was synthesized by solid state reaction method using elemental powders of Cu, Zn, Sn and Se. Powders were milled in high purity ethanol using zirconia ball with mixed size of 1 and 3 mm at the same proportions for 72 hours milling time. The structural, chemical and mechanical properties of the synthesized CZTSe powders were investigated prior to the deposition process. The CZTSe compound powder, and $500^{\circ}C$ of sintering temperature shows the best properties for PLD target. Results show that the as-deposited CZTSe thin films with the precursors by PLD have a composition near-stoichiometric.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.391-402
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• 1999

Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.35-39
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• 2003

This paper is contents on the orthorhombic crystalline calcined by the solid phase method with LiMnO$_2$ thin film structured as the result which an average pore diameter of power was 132.3${\AA}$ in porosity analysis. Voltage ranges are able to get the properties of charge and discharge for experimental results of LiMnO$_2$ thin film were 2.2V 4.3V. The current density and scan speed were 0. 1㎃/$\textrm{cm}^2$ and 0.2㎷/sec respectively. Properties of the charge and discharge are obtained by optimum experiment condition parameters. Li dense ratio of the LiMnO$_2$ thin film that discharged capacities were 87㎃h/g have been 96.9［ppm］ at 670.784［nm］ wavelength. The dense ratio of Mn analyzed to 837［ppm］ at 257.610［nm］ wavelength. It can be estimated the quality of the LiMnO$_2$ thin film as that the wrong LiMnO$_2$ thin film pulled up from cell of electrolyte and became dry it at 800$^{\circ}C$. The results of SEM and XRD were the same as that of original researchers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.345-345
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• 2010

1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.