• Title/Summary/Keyword: Solid state diffusion

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Molecular Dynamics Simulation for Monolayers of Alkyl Thiol Molecules at Air-Solid Interfaces

  • 이송희;김한수
    • Bulletin of the Korean Chemical Society
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    • v.17 no.8
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    • pp.700-706
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    • 1996
  • We present the results of molecular dynamics simulations of monolayers of long-chain alkyl thiol [S(CH2)15CH3] molecules on an air-solid interface using the extended collapsed atom model for the chain-molecule and a gold surface for the solid surface. Several molecular dynamics simulations have been performed on monolayers with areas per molecule ranging from 18.30 to 32.10 Å2/molecule. It is found that there exist three possible transitions: a continuous transition characterized by a change in molecular configuration without change in lattice structure, a sudden transition characterized by the distinct lattice defects and perfect islands, and a third transition characterized by the appearance of a random, liquid-like state. The analysis of probability distributions of the segments shows that the structure of the chain-molecules at the air-solid interface is completely different from that at the air-water interface in the view of the degree of overlap of the probability distributions of the neighbor segments. The calculated diffusion coefficients of the chain-molecules on the monolayers seem to be not directly related to any one of the three transitions. However, the large diffusion of the molecules enhanced by the increment of the area per molecule may induce the second transition.

Thermal analysis of the active-front-end rectifier for solid-state-transformer applications (반도체 변압기용 AFE 정류기의 열해석 연구)

  • WANG, SHANSHAN;Kang, Kyoung Pil;Baek, Ju Won;Kim, juyong;Cho, Younghoon
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.435-436
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    • 2017
  • This papaer is study on thermal analysis of the active-front-end(AFE) rectifier for solid-state-transformer(SST) applications. finite element analysis simulation model is combined by switching component model, power diode and heat-sink model. thermal model is calculated by computer program and feedback the result. using simulation result analysis switching loss and compare to thermal diffusion of the heat in the model for steady-state operation.

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Evaluation for Al/Cu bonding by liquefaction after solid phase diffusion in the air

  • Kawakami, Hiroshi;Suzuki, Jippei;Fujiwara, Masanori;Nakajima, Junya;Kimura, Keiko
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.393-395
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    • 2005
  • The bonding for Aluminum and Copper in the air is investigated in this study. This bonding method does not include the special process of removing aluminum oxide films. In case of this bending, each metal Is heated at bonding temperature where is above eutectic temperature of Al-Cu system and below melting point of Aluminum. The liquefaction around the bonding surface occurs after the diffusion at solid state of each metal. This phenomenon is predicted by the temperature range above eutectic temperature of Al-Cu equilibrium phase diagram.

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Liquid Phase Diffusion Bonding Procedure of Rene80/B/Rene80 System -Liquid Phase Diffusion Bonding Using B Powder Coating Method (Rene80/B/Rene80계의 액상확산 접합과정 -B분말 도포법을 이용한 액상확산접합)

  • 정재필;강춘식
    • Journal of Welding and Joining
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    • v.13 no.2
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    • pp.132-138
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    • 1995
  • Rene80 superalloy was liquid phase diffusion bonded by using boron(B) as an insert material, where B has high diffusivity and higher melting point as an insert material. Bonding procedure and bonding mechanism of Rene80/B/Rene80 joint were investigated. As results, liquid metal was produced by solid state reaction between base metal and insert material on bonding zone. The liquid metal was produced preferentially at the grain boundary. Except for production of liquid metal, other bonding procedure was nearly same as TLP(Transient Liquid Phase) bonding. Bonding time, however, was reduced compared to prior result of TLP bonding. By bonding S.4ks at l453K, Ren80/B/Rene80 joint was isothermally solidified and homogenized where thickness of insert material was 7.5.mu.m.

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Kinetic Analysis of Diffusion Aluminide Coating (확산 알루미나이드 코팅의 속도론적 해석)

  • 손희식;김문일
    • Journal of the Korean institute of surface engineering
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    • v.28 no.3
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    • pp.152-163
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    • 1995
  • A theoretical model which combines gaseous transport and solid state diffusion with the multi-component equilibrium at the gas/pack and gas/coating interfaces was used to study the kinetics of diffusion aluminide coating. The diffusion aluminide coatings were applied by pack cementation with Ni substrate under argon atmosphere in the high activity and the low activity pack containing $NH_4CL$ or $AlF_3$ activator. On the basis of the process conditions, the suggested model allows the surface composition, the growth rate of coating layers and the aluminium concentration profiles in coatings to be calculated. In the case of $NH_4$Cl activator, careful consideration was required in the analysis, because activator contains nitrogen and hydrogen as well as halogen element to activate the pack. A good agreement is obtained between the theoretical predictions and the experimental results.

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Zn Diffusion using by Open-tube Method into n-type $GaAS_{0.60}P_{0.40}$ and the Properties of Electroluminescence (Open-tube 방식을 이용한 n-type $GaAS_{0.60}P_{0.40}$에 Zn 확산과 전계발광 특성)

  • Pyo, Jin-Goo;So, Soon-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.63-66
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    • 2003
  • To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

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The high thermal stability induced by a synergistic effect of ZrC nanoparticles and Re solution in W matrix in hot rolled tungsten alloy

  • Zhang, T.;Du, W.Y.;Zhan, C.Y.;Wang, M.M.;Deng, H.W.;Xie, Z.M.;Li, H.
    • Nuclear Engineering and Technology
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    • v.54 no.8
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    • pp.2801-2808
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    • 2022
  • The synergistic effect of ZrC nanoparticle pining and Re solution in W matrix on the thermal stability of tungsten was studied by investigating the evolution of the microstructure, hardness and tensile properties after annealing in a temperature range of 1000-1700 ℃. The results of metallography, electron backscatter diffraction pattern and Vickers micro-hardness indicate that the rolled W-1wt%Re-0.5 wt% ZrC alloy has a higher recrystallization temperature (1600 ℃-1700 ℃) than that of the rolled pure W (1200 ℃), W-0.5 wt%ZrC (1300 ℃), W-0.5 wt%HfC (1400-1500 ℃) and W-K-3wt%Re alloy fabricated by the same technology. The molecular dynamics simulation results indicated that solution Re atoms in W matrix can slow down the self-diffusion of W atoms and form dragging effect to delay the growth of W grain, moreover, the diffusion coefficient decrease with increasing Re content. In addition, the ZrC nanoparticles can pin the grain boundaries and dislocations effectively, preventing the recrystallization. Therefore, synergistic effect of solid solution Re element and dispersed ZrC nanoparticles significantly increase recrystallization temperature.

Joining of 8 mol% YSZ Solid Electrolyte and Perovskite LaMnO3 (8 mol% YSZ 고체전해질과 페로프스카이트 $LaMnO_3$와의 접합)

  • 김명철;박순자
    • Journal of the Korean Ceramic Society
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    • v.29 no.5
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    • pp.377-382
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    • 1992
  • For the development of solid oxide fuel cell the joined interface formation between perovskite oxygen electrode and YSZ solid electrolyte is emphasized in the aspect of reducing the undisirable overpotential. The diffusion couple of LaMnO3 and YSZ was prepared by hot pressing at 130$0^{\circ}C$ in the flow of oxygen gas. The high temperature solid state reaction mechanism between LaMnO3 and YSZ is discussed on the basis of the cation composition profile through EDX analysis. The cation components in perovskite compound diffuse considerably into YSZ, while cations of YSZ diffuse little into perovskite.

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Pre-processing System for Converting Shell to Solid at Selected Weldment in Shell FE Model (선체 Shell FE 모델 내 용접부의 Solid 요소변환 자동화 시스템)

  • Yoo, Jinsun;Ha, Yunsok
    • Journal of Welding and Joining
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    • v.34 no.2
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    • pp.11-15
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    • 2016
  • FE analyses for weldment of ship structure are required for various reasons such as stress concentration for bead tow, residual stress and distortion after welding, and hydrogen diffusion for prediction of low temperature crack. These analyses should be done by solid element modeling, but most of ship structures are modeled by shell element. If we are able to make solid element in the shell element FE modeling it is easily to solve the requirement for solid elements in weld analysis of large ship structures. As the nodes of solid element cannot take moments from nodes of shell element, these two kinds of element cannot be used in one model by conventional modeling. The PSCM (Perpendicular shell coupling method) can connect shell to solid. This method uses dummy perpendicular shell element for transferring moment from shell to solid. The target of this study is to develop a FE pre-processing system applicable at welding at ship structure by using PSCM. We also suggested glue-contact technique for controlling element numbers and element qualities and applied it between PSCM and solid element in automatic pre-processing system. The FE weldment modeling through developed pre-processing system will have rational stiffness of adjacent regions. Then FE results can be more reliable when turn-over of ship-block with semi-welded state or ECA (Engineering critical assessment) of weldment in a ship-block are analyzed.

Silicide Formation by Solid State Diffusion in Mo/Si Multilayer Thin Films (Mo/Si 다층박막에서의 고상확산에 의한 실리사이드 생성에 관한 연구)

  • 지응준;곽준섭;심재엽;백홍구
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.507-514
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    • 1993
  • The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

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