• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.685-697
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• 2017

In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• Proceedings of the KIEE Conference
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• 2009.04a
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• pp.37-39
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• 2009

The physicochemical properties of the fatty acid monomolecular Arachidic Acid, Stearic Acid films surface structure has been studied by AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is gas state, liquid state, solid state. Formation that prevent when gas phase state and liquid phase state measure but could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.04a
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• pp.23-26
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• 2003

Solid-state extrusion technique was employed for the improvement of mechanical properties of polylactic acid (PLLA) widely used as biodegradable internal fixation devices currently. Cylindrical billets were machined out from the vacuum compression-molded PLLA to have various diameters, and solid-state extrusion of the billets was performed at various drawing rates and at the extrusion temperature of $130^{\circ}C$. Throughout the whole processes the decrease in molecular weight was significantly suppressed to be about $10\%$. Flexural modulus and strength of PLLA increased up to 8.3 GPa and 221 MPa, respectively. Studies on the orientation and crystallinity of extruded PLLA could reveal the effects of billet morphology, draw ratio, and drawing rate on the flexural strengths of PLLA.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.255-260
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• 2005

Direct solid state synthesis by hot pressing has been applied in order to produce high efficiency $Zn_4Sb_3$ bulk specimens. Single phase $Zn_4Sb_3$ with 98.5% of theoretical density was successfully produced by direct hot pressing of elemental powders containing 1.2 at.% excess Zn. Thermoelectric properties as a function of temperature were investigated from room temperature to 600 K and compared with results of other studies. Transport properties at room temperature were also evaluated. Thermoelectric properties of single phase $Zn_4Sb_3$ materials produced by direct synthesis were measured and are comparable to the published data. Direct solid state synthesis by hot pressing provides a promising processing route in this material.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1714-1716
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• 1998

The surface breakdown problem has plagued the development of high solid state for more than 30 years, but the physical basis for this flashover phenomenon is still not understood. The only way to overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material, to coating/encapsulation the device in an insulting medium. In this paper, characteristics of flashover in high field Si-dielectric system behavior under high electric field is discussed.

• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.3-5
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• 2003

본 논문은 DVR과 DSTATCOM 같은 수 MVA급 용량의 CPD (Custom Power Device)를 평가하기 위한 Sag 및 Swell 전압 발생 장치에 사용될 두 가지 형태의 새로운 회로 방식에 관한 것이다. 제안된 Sag 및 Swell 전압 발생 장치는 계통선로에 직렬로 연결된 직렬 변압기를 통해 다양한 형태로 전압을 발생 시킬 수 있으며, 전격회로는 Solid-State Switched Tap Changer와 AC-Chopper 두 가지 방식을 이용하고 있다. 본 논문에서는 제안된 각각의 방식에 대한 고조파 분석을 하였고, 또한 시뮬레이션을 통해서 제안된 Sag 및 Swell 전압 발생장치를 통해서 원하는 형태의 전압을 얻을 수 있음을 확인하였다.

• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.807-811
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• 2002

We present a hypothetical quantum scattering model to propose a novel electroluminescence device. Adoping with features of solid state semiconductor LED and exciplex laser, the cathode (electrol incoming potential) and anode(electron outgoing potential) are made to correspond to two 1-dimensional resonance supporting potentials, and the light emitting part to an interaction potential in the intermediate region. When an external voltage is applied, the electron flows into the cathode having small work function. Subsequently in flows via LUMO of the " electron incoming potential" loses kinetic energy emitting a photon, then continues to flow via LUMO of the "electron outgoing potential" unlike the conventional LUMO to HOMO transitions occurring in solid state semiconductor LED. In this model, the photon frequency can be controlled by adijusting the applied voltage. The model hopefully could be realized as partially conjugated hydrocarbon chains.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• Current Optics and Photonics
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• v.4 no.4
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• pp.273-276
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• 2020

We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 ㎂, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.