• Title/Summary/Keyword: Solar-light

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Effects of Daylight and Solar Radiation on Indoor Thermal Environment According to Space Structures in Multi-Complex Cultural Center (복합문화시설내 공간 구조에 따른 일조와 일사가 실내 온열환경에 미치는 영향)

  • Choi, Byungbo;Jeon, Hyun Sik;Yoon, Seokil;Kim, Sughwan;Lee, Sang-Jin;Kim, Sumin
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.24 no.11
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    • pp.751-758
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    • 2012
  • Recently, people are paying attention to new forms of construction. For example, deviated from an enclosed type space, people have been interested in an atrium type and an arcade type spaces. In this study, we had hypothesis 'Indoor thermal environment will be influenced by the inflow rate of natural lights with temperature and humidity.' We selected a multi-complex cultural center and conducted this study. This place is consisted of atrium, arcade, and enclosed types. The three spaces were classified according to the type of spaces that have own features along with their forms. The atrium type space has ceiling and the side windows, and the arcade type space has ceiling windows. On the other hand, there are no windows or open parts in the enclosed type space. Three measurement points at each space were selected because of their huge space. Intensity of illumination, temperature and humidity were confirmed by the average value of three measurement points. In addition, surveys were conducted regarding indoor comfort elements in each space.

Evaluating the Catalytic Effects of Carbon Materials on the Photocatalytic Reduction and Oxidation Reactions of TiO2

  • Khan, Gulzar;Kim, Young Kwang;Choi, Sung Kyu;Han, Dong Suk;Abdel-Wahab, Ahmed;Park, Hyunwoong
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1137-1144
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    • 2013
  • $TiO_2$ composites with seven different carbon materials (activated carbons, graphite, carbon fibers, single-walled carbon nanotubes, multi-walled carbon nanotubes, graphene oxides, and reduced graphene oxides) that are virgin or treated with nitric acid are prepared through an evaporation method. The photocatalytic activities of the as-prepared samples are evaluated in terms of $H_2$ production from aqueous methanol solution (photo-catalytic reduction: PCR) and degradation of aqueous pollutants (phenol, methylene blue, and rhodamine B) (photocatalytic oxidation: PCO) under AM 1.5-light irradiation. Despite varying effects depending on the kinds of carbon materials and their surface treatment, composites typically show enhanced PCR activity with maximum 50 times higher $H_2$ production as compared to bare $TiO_2$. Conversely, the carbon-induced synergy effects on PCO activities are insignificant for all three substrates. Colorimetric quantification of hydroxyl radicals supports the absence of carbon effects. However, platinum deposition on the binary composites displays the enhanced effect on both PCR and PCO reactions. These differing effects of carbon materials on PCR and PCO reactions of $TiO_2$ are discussed in terms of physicochemical properties of carbon materials, coupling states of $TiO_2$/carbon composites, interfacial charge transfers. Various surface characterizations of composites (UV-Vis diffuse reflectance, SEM, FTIR, surface area, electrical conductivity, and photoluminescence) are performed to gain insight on their photocatalytic redox behaviors.

Na Doping Properties of Cu(In,Ga)Se2 Absorber Layer Using NaF Interlayer on Mo Substrate (Mo 기판위의 NaF 중간층을 이용한 Cu(In,Ga)Se2 광흡수층의 Na 도핑특성에 관한 연구)

  • Park, Tae-Jung;Shin, Dong-Hyeop;Ahn, Byung-Tae;Yun, Jae-Ho
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.452-456
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    • 2009
  • In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

Radiative transfer analysis for Amon-Ra instrument

  • Seong, Se-Hyun;Ryu, Dong-Ok;Lee, Jae-Min;Hong, Jin-Suk;Kim, Seong-Hui;Yoon, Jee-Yeon;Park, Won-Hyun;Lee, Han-Shin;Park, Jong-Soo;Yu, Ji-Woong;Kim, Sug-Whan
    • Bulletin of the Korean Space Science Society
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    • 2009.10a
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    • pp.28.4-29
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    • 2009
  • The 'Amon-Ra' instrument of the proposed 'EARTHSHINE' satellite is a dual (i.e. imaging and energy) channel instrument for monitoring the total solar irradiance (TSI) and the Earth's irradiance at around the L1 halo orbit. Earlier studies for this instrument include, but not limited to, design and construction of breadboard Amon-Ra imaging channel, stray light suppression and system performance computation using Integrated Ray Tracing (IRT) technique. The Amon-Ra instrument is required to produce 0.3% in uncertainty for both Sunlight and Earthlight measurement. In this study, we report accurate estimation of the output electric signal derived from the orbital variation of radiant exitance from the Sun and the Earth arriving at the aperture and detector plane of the Amon-Ra. For this, orbital irradiance are computed analytically first and then confirmed by simulation using Integrated Ray Tracing (IRT) model. Specially, the results show the arriving power at the bolometer detector surface is $1.24{\mu}W$ for the Sunlight and $1.28{\mu}W$ for the Earthlight, producing the output signal pulses of 34.31 mV and 35.47 mV respectively. These results demonstrate successfully that the arriving radiative power is well within the bolometer detector dynamic range and, therefore, the proposed detector can be used for the in-orbit measurement sequence. We discuss the computational details and implications as well as the simulation results.

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Photoelectrochemical Water Oxidation Using ZnO Nanorods Coupled with Cobalt-Based Catalysts

  • Jeon, Tae-Hwa;Choi, Sung-Kyu;Jeong, Hye-Won;Kim, Seung-Do;Park, Hyun-Woong
    • Journal of Electrochemical Science and Technology
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    • v.2 no.4
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    • pp.187-192
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    • 2011
  • Photoelectrochemical performances of ZnO electrodes are enhanced by coupling with cobalt-based catalyst (CoPi) in phosphate electrolyte (pH 7). For this study, hexagonal pillar-shaped ZnO nanorods are grown on ZnO electrodes through a chemical bath deposition, onto which CoPi is deposited with different photodeposition times (10-30 min). A scanning electron microscopic study indicates that CoPi deposition does not induce any change of ZnO morphology and an energy-dispersive X-ray spectroscopic analysis shows that inorganic phosphate ions (Pi) exist on ZnO surface. Bare ZnO electrodes generate the current of ca. $0.36mA/cm^2$ at a bias potential of 0.5 V vs. SCE, whereas ZnO/CoPi (deposited for 10 min) has ca. 50%-enhanced current ($0.54mW/cm^2$) under irradiation of AM 1.5G-light ($400mW/cm^2$). The excess loading of CoPi on ZnO results in decrease of photocurrents as compared to bare ZnO likely due to limited electrolyte access to ZnO and/or CoPi-mediated recombination of photogenerated charge carriers. The primary role of CoPi is speculated to trap the photogenerated holes and thereby oxidize water into molecular oxygen via an intervalency cycle among Co(II), Co(III), and Co(IV).

Analysis and Application of the Reflection Characteristics of a Simple Retro-reflector (1차원적 단순배열구조 재귀반사체의 반사출력광 특성 및 응용)

  • Jeong, Yong-Beom;Hong, Sung-Hoon;Lee, Seung-Gol;O, Beom-Hoan
    • Korean Journal of Optics and Photonics
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    • v.25 no.5
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    • pp.239-244
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    • 2014
  • Retro-reflectors have been used for a wide range of applications such as traffic safety, special blinds, optical devices, etc. We analyzed the characteristics of the reflected light of a strap retro-reflector as a function of incidence angle. It is expected that various solar control structures may be designed more quantitatively using the characteristic chart we have prepared.

Thermal Analysis of Satellite Panel Using Carbon Composites (탄소복합재를 이용한 위성 패널의 열해석)

  • Jun, Hyoung-Yoll;Kim, Jung-Hoon;Park, Jong-Seok;Park, Kun-Joo
    • Aerospace Engineering and Technology
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    • v.10 no.2
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    • pp.114-120
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    • 2011
  • Thermal control of satellite is mainly based on passive ways, such as the radiator made of aluminum honeycomb core with aluminum skins and OSR (Optical Solar Reflector). Additionally, for the thermal control of high dissipation unit, the aluminum doubler and heat pipe are utilized. Recently, efforts to find advanced thermal materials have been carried out to enhance heat rejection capability without increasing satellite size, weight and cost. This paper handles the carbon composites have high thermal conductivity with light weigh and have been considered as future thermal control materials to replace aluminum based radiator and doubler. Thermal analysis of satellite panel using APG(Annealed Pyrolytic Graphite) and carbon-carbon composites were performed and temperature contours were compared with the conventional thermal control methods.

Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis

  • Sin, Chang-Mi;Ryu, Hyeok-Hyeon;Lee, Jae-Yeop;Heo, Ju-Hoe;Park, Ju-Hyeon;Lee, Tae-Min;Choe, Sin-Ho;Fei, Han Qi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.24.1-24.1
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    • 2009
  • The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

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Surface Morphology and Quantum Size Effect of ZnS Thin Film Grown by Solution Growth Technique (용액성장된 ZnS 박막의 표면형상 및 양자사이즈효과)

  • Lee, Jong-Won;Lee, Sang-Uk;Jo, Seong-Ryong;Kim, Seon-Tae;Park, In-Yong
    • Korean Journal of Materials Research
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    • v.12 no.1
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    • pp.36-43
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    • 2002
  • In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

The Characteristics of High Temperature Crystallized Poly-Si for Thin Film Transistor Application (박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가)

  • 김도영;심명석;서창기;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.237-241
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    • 2004
  • Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.