• 제목/요약/키워드: Solar cell application

검색결과 328건 처리시간 0.028초

Size Control of PbS Colloidal Quantum Dots and Their Application to Photovoltaic Devices

  • Lee, Wonseok;Ryu, Ilhwan;Choi, Geunpyo;Yim, Sanggyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.249.1-249.1
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    • 2015
  • Quantum dots (QDs) are attracting growing attention for photovoltaic device applications because of their unique electronic, optical and physical properties. Lead sulfide (PbS) QDs are one of the most widely studied materials for the devices and known to have size-tunable properties. In this context, we investigated the relationship between the size of PbS QDs and two synthesizing conditions, a concentration of ligand, oleic acid in this work, and injection temperature. The inverted colloidal quantum dot solar cells based on the heterojunction of n-type zinc oxide layer and p-type PbS QDs were also fabricated. The size of the QDs and cell properties were observed to depend on both the QD synthesizing conditions, and hence the overall efficiency of the cell could vary even though the size of QDs used was same. The QD synthesizing conditions were finally optimized for the maximum cell efficiency.

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고효율 후면 전극형 태양전지를 위한 나노 Paste의 적용에 대한 연구 (The application of Nano-paste for high efficiency back contact Solar cell)

  • 남동헌;이규일;박용환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.53.2-53.2
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    • 2010
  • In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

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The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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Selective Emitter 구조를 적용한 Ni/Cu Plating 전극 결정질 실리콘 태양전지 (Application of a Selective Emitter Structure for Ni/Cu Plating Metallization Crystalline Silicon Solar Cells)

  • 김민정;이재두;이수홍
    • 한국전기전자재료학회논문지
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    • 제23권7호
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    • pp.575-579
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    • 2010
  • The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

PWM chopper 에 의한 태양전지의 출력제어 (Output control of solar cells using PWM chopper)

  • 유권종;김용식;박이준;송진수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 하계학술대회 논문집
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    • pp.401-404
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    • 1990
  • A new control method of solar cell output using PWM chopper is described. Theoretical analysis and comparision for all sorts of system are also discussed for improving photovoltic system efficiency. It is expected that the result of this study will be utilized to some other DC or AC application equipments.

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APT 외등 비상등 전원 공급등 태양광 시스템에 관한 연구 (A Study on the Photovoltaic System of power supply for Outdoor and emergency lamp at APT)

  • 박종복;임중열;차인수;정명웅;이만근
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1998년도 학술발표회논문집
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    • pp.170-176
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    • 1998
  • The objective of the research project is the practical application of solar lighting system to apartment. This system is composed of solar cell, battery system, inverter, and a grid-connected circuit. This experimental results are recognized to us that the research results, which was developed but not applied, is able to improve the effect by expanding their utilization. We will utilize this system continuously as public relation.

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스프레이 증착법을 이용한 CdTe박막의 열처리에 따른 특성 분석 (Effect of thermal treatment on spray deposited CdTe thin films)

  • 이진영;황수연;이태진;류시옥
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.49.2-49.2
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    • 2010
  • Polycrystalline CdTe thin films for solar cell continues to be a promising material for the development of cost effective and reliable photovoltaic processes. The two key advantages of this material are its high optical absorption coefficient and its near ideal band gap for photovoltaic conversion efficiency of 1.4-1.5 eV. In this study we made the CdTe thin films for solar cell application which was deposited on the glass substrates using a modified chemical spray method at low temperature. This process does not require the sophisticated and expensive vacuum systems. The prepared CdTe films were characterized with the aid of scanning electron microscope (SEM), UV-visible spectrophotometer, and X-ray diffraction spectrometer (XRD). Following are results of a study on the "Human Resource Development Center for Economic Region Leading Industry" Project, supported by the Ministry of Education, Science & Tehnology(MEST) and the National Research Foundation of Korea(NRF).

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태양전지용 CdSe 나노입자의 합성 (Preparation and Characterization of CdSe nanoparticle for Solar Cell application)

  • 김신호;박명국;이보람;이현주;김양도
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 추계학술대회 논문집
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    • pp.318-321
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    • 2007
  • CdSe nanoparticles were prepared by chemical solution methods using $CdCl_2{\cdot}4H_2O$ (or $Cd(NO_3)_ 2{\cdot}4H_2O$) and $Na_2SeSO_3$. The characteristics of CdSe nanoparticles were controlled by the react ion time, reaction temperature and reaction method as well as the surfactants. Cetyltrimethyl ammonium bromide(CTAB) was used as a capping agent to control the chemical reactions in aqueous solution. Polyvinylalcohol(PVA) was used as a templet in sono-chemical method. CdSe nanoparticles synthesized in aqueous solution showed homogeneous size distribution with relatively stable surface. CdSe nanoparticles synthesized in non-aqueous solution containing diethanolamine(DEA) showed the structure transformation from cubic to hexagonal as the reduction temperature increased from 80 to $160^{\circ}C$. Core shell CdSe was synthesized by sono-chemical method. Characteristics of CdSe nanoparticles were analyzed using transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), x-ray diffraction(XRD), UV-Vis absorption spectra, fourier transform infrared spectroscopy(FT-IR) and photoluminescence spectra spectroscopy(PL). This paper presents simple routes to prepare CdSe nanoparticles for solar cell applications.

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고상 결정화법을 위한 새로운 공정조건으로 제작된 다결정 Si 박막의 태양전지 특성 평가 (Evaluation of Solar Cell Properties of Poly-Si Thin Film Fabricated with Novel Process Conditions for Solid Phase Crystallization)

  • 권순용;정지현
    • 한국전기전자재료학회논문지
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    • 제24권9호
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    • pp.766-772
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    • 2011
  • Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

Comparison of transparent conductive indium tin oxide, titanium-doped indium oxide, and fluorine-doped tin oxide films for dye-sensitized solar cell application

  • Kwak, Dong-Joo;Moon, Byung-Ho;Lee, Don-Kyu;Park, Cha-Soo;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • 제6권5호
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    • pp.684-687
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    • 2011
  • In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.