• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.638-642
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• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• Clean Technology
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• v.26 no.1
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• pp.72-78
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• 2020

The use of fossil fuel and biogas production causes air pollution and climate change problems. Research endeavors continue to focus on converting methane and carbon dioxide, which are the major causes of climate change, into quality energy sources. In this study, a novel plasma-carbon converter was proposed to convert biogas into high quality gas, which is linked to photovoltaic and wind power and which poses a problem on generating electric power continuously. The characteristics of conversion and gas production were investigated to find a possibility for biogas conversion, involving parametric tests according to the change in the main influence variables, such as O₂/C ratio, total gas feed rate, and CO₂/CH₄ ratio. A higher O₂/C ratio gave higher conversions of methane and carbon dioxide. Total gas feed rate showed maximum conversion at a certain specified value. When CO₂/CH₄ feed ratio was decreased, both conversions increased. As a result, the production of solar fuel by plasma oxidation destruction-carbon material gasification conversion, which was newly suggested in this study, could be known as a possibly useful technology. When O₂/C ratio was 0.8 and CO₂/CH₄ was 0.67 while the total gas supply was at 40 L min^-1 (VHSV = 1.37), the maximum conversions of carbon dioxide and methane were achieved. The results gave the highest production for hydrogen and carbon dioxide which were high-quality fuel.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.31-40
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• 2014

The Korean government made the 2nd Energy Basic Plan to achieve 11% of new and renewable energies distribution rate until 2035 as a response to cope with international discussion about greenhouse gas emission reduction. Renewable energies include solar thermal, photovoltaic, bioenergy, wind power, small hydropower, geothermal energy, ocean energy, and waste energy. New energies contain fuel cells, coal gasification and liquefaction, and hydrogen. As public and private investment to enhance the distribution of new and renewable energies, it is necessary to clarify the economic effects of the new and renewable energies sector. To the end, this study attempts to apply an input-output analysis and analyze the economic effects of new and renewable energies sector using 2012 input-output table. Three topics are dealt with. First, production-inducing effect, value-added creation effect, and employment-inducing effect are quantified based on demand-driven model. Second, supply shortage effects are analyzed employing supply-driven model. Lastly, price pervasive effects are investigated applying Leontief price model. The results of this analysis are as follows. First, one won of production or investment in new and renewable energies sector induces 2.1776 won of production and 0.7080 won of value-added. Moreover, the employment-inducing effect of one billion won of production or investment in new and renewable energies sector is estimated to be 9.0337 persons. Second, production shortage cost from one won of supply failure in new and renewable energies sector is calculated to be 1.6314 won, which is not small. Third, the impact of the 10% increase in new and renewable energies rate on the general price level is computed to be 0.0123%, which is small. This information can be utilized in forecasting the economic effects of new and renewable energies sector.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.65-71
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• 2016

In this study, Antimony Tin Oxide (ATO) ion storage layer and $TiO_2$ working electrode were fabricated using Nano Particle Deposition System. NPDS is the cutting-edge technology among the dry deposition methods. Accelerated particles are deposited on the substrate through the nozzle using NPDS. The thicknesses for coated layers were measured and layer's morphology was acquired using SEM. The fabricated electrochromic cell's transmittance was measured using UV-Visible spectrometer and power source at 630 nm. As a result, the integrated electrochromic/DSSC hybrid system was successfully fabricated as an energy harvesting system. The fabricated electrochromic cell was self-operated using DSSC as a power source. In conclusion, the electrochromic cell was operated for 500 cycles, with 49% of maximum transmittance change. Also the photovoltaic efficiency for DSSC was measured to be 2.55% while the electrochromic cell on the integrated system had resulted in 26% of maximum transmittance change.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.54-54
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• 2010

In this study, the correlation between temperature and the gel-content of the module were analyzed through experiments. Amorphous thin-film solar cell used in this experiment has a visible light transmission performance of 10%. In addition, ethylene vinyl acetate(EVA) film and the clear glass have been used for the modulation. The most important process is to laminate the module in the manufacturing process of BIPV(Building integrated photovoltaic) module. Setting parameters of laminator in the lamination process are temperature, pressure and time. Setting conditions significantly affect the durability, watertightness and airtightness of module. The most important factor in the setting parameters is temperature to satisfy the gel-contents. The bottom and top surface temperature of module are measured according to setting temperature of laminator. The results showed $145^{\circ}C$ of max temperature of the bottom surface and $128^{\circ}C$ of max temperature of top surface on the module at the temperature condition of $160^{\circ}C$. And at the another temperature condition of laminator with $150^{\circ}C$, the max temperature do bottom and top are $117^{\circ}C$ and $134^{\circ}C$ respectively. The temperature difference between bottom and top of the module occurred, that is because heat has been blocked by the clear glass and the bottom of the cells absorb the heat from the laminator. In this particular, the temperature difference between setting temperature of the laminator and the surface temperature of the module showed $15^{\circ}C$, because the heat of laminator plate is transferred to the surface of the module and heat is lost at this time. As a results, gel-content showed 94.8%, 88.7% and 81.7% respectively according to the setting temperature $155^{\circ}C$, $150^{\circ}C$ and $145^{\circ}C$ of the laminator. In conclusion, the surface temperature of module increases, the gel-contents is relatively increased. But if the laminator plate temperature is too high, the gel-content shows rather decline in performance. Furthermore, the temperature difference between setting temperature and the surface temperature of the module is affected by laminating machine itself and the temperature of module should be considered when setting the laminator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.