• Journal of Korea Society of Industrial Information Systems
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• v.17 no.1
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• pp.1-9
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• 2012

This paper explained about the sludge recycling system which retrieved the silicon and abrasive from solar cell wafer slicing. The basic process of the recycling system was multiple centrifuge and secondary processes of ultra sonic agitation, addition of alcohol-water solution and heating sludge was added for raising separation efficiency. The recycling rate was about 96% and 94% for 2N, 4N silicon respectively. The SiC abrasive recycling rate was about 80%. To retrieve the high purity of 4N silicon, the heat process in vacuum furnace was added to remove remaining impurity components.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.264-268
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• 2011

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.248-250
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• 2009

고효율 태양전지를 위한 결정질 태양전지의 구조 중 UNSW에서 개발한 BCSC(buried contact solar cell)가 있는데, 이는 전면 전극을 laser 처리 후 무전해 니켈 도금으로 형성한 것이다. 이같은 전면 전극을 형성하기 위해서는 무전해 nickel 도금 후 열처리가 필수적이다. 우리는 이 공정을 확립하기 위해 결정질 wafer에 후면을 PECVD로 SiNx막을 형성하여 $30\Omega/\square$로 도핑한 후 후면을 불산으로 제거한 상태에서 양면을 니켈 무전해 도금으로 전극을 형성하여 $300^{\circ}C,\;350^{\circ}C,\;400^{\circ}C$에서 각각 3,6,9분간 진행하였다. 그 결과 $400^{\circ}C$에서 3분간 열처리된 sample이 상대적으로 가장 명확한 IV curve를 형성하였다. 이 실험의 결과는 PN 접합 구조에서 전극을 nickel로 사용할 때 유용하게 사용될 수 있다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.47.2-47.2
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• 2010

For reducing outer reflection in mono-crystalline silicon solar cell, wet texturing process has been adapted for long period of time. Nowadays mixed solution with potassium hydroxide and isopropyl alcohol is used in silicon surface texturing by most manufacturers. In the process of silicon texturing, etch rate is very critical for effective texturing. Several parameters influence the result of texturing. Most of all, temperature, process time and concentration of potassium hydroxide can be classified as important factors. In this paper, temperature, process time and concentration of potassium hydroxide were set as major parameters and 3-level test matrix was created by using robust design for the optimized condition. The process optimization in terms of lowest reflection and stable etch rate can be traced by using robust design method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.2
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• pp.23-27
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• 1976

$Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.335.2-335.2
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• 2016

The fixed negative charge of the Al2O3 passivation layer gives excellent passivation performance for both n-type and p-type silicon wafers. For the best passivation quality, annealing is known to be a prerequisite step and a lot of studies concerning annealing effect on the passivation characteristics have been performed. Meanwhile, for manufacturing a crystalline silicon solar cell, firing process is applied to the Al2O3 passivation layer. Therefore, study on not only annealing effect but also on firing effect is necessary. In this work, Al2O3 passivation performance (minority carrier lifetime) for p-type silicon wafer was evaluated with Quasi-Steady-State Photoconductance(QSSPC) measurement after annealing at different temperatures. For the samples which showed different aspects, C-V measurement was performed for the cause - whether it is due to the chemical effect or field-effect. The change in Al2O3 passivation property after firing processes was investigated and the mechanism for the change could be estimated.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.6
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.890-895
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• 1999

The recent important issue in solar cell fabrication is to adopt thin film silicon solar cells on cheap substrates. However, thin cells demand new grid design concept that all the contacts(to the emitter and base) be located on the front surface. Hence, the aim of the investigation presented in this paper was to determine the potential and the basic limitation of the design. With this concept, an interdigitated front grid structure was realized and cells were fabricated through a set of photolithography processes. Confirmed efficiencies of up to 11.5% were achieved on bonded SOI wafers with a cell thickness of 50$\mu\textrm{m}$ in the case of finger spacing more than $\mu\textrm{m}$ and a base width of 35$\mu\textrm{m}$. It was also shown from the results that the design rules for optimizing the base fraction and reducing the shadowing fraction are noted as an important technique to realize high-efficiency thin silicon solar cells.