• 전기학회논문지P
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• 제51권2호
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.325-330
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• 1994

In this paper, $TiO_2$ thin films were fabricated by Sol-Gel method and their electrical conductivity and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis condition. The uniform surface of thin films was confirmed by SEM. The electrical conductivity of thin films decreased with increasing heat treatment temperature. The humidity sensing properties of thin films were good in high humidity and low frequency regions.

• 한국자기학회지
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• 제13권1호
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• pp.36-40
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• 2003

D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$(x=0.5,1.0,1.5,2.0) 가네트 박막을 sol-gel법의 일종인 Pechini법의 이용하여 $Al_2$ $O_3$, G $d_3$G $a_{5}$ $O_{12}$ (111) 평면에 성장시켰다. 단일 조성의 D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ 박막을 얻기 위한 열처리 온도는 기판의 종류에 의존하며, 박막과 같은 구조의 G $d_3$G $a_{5}$ $O_{12}$ (111) 기판의 경우 A1$_2$ $O_3$ 기판을 사용한 경우에 비해 단일 조성을 얻기 위한 열처리 온도가 약 5$0^{\circ}C$ 감소함을 알 수 있었다. G $d_3$G $a_{5}$ $O_{12}$ (111) 기판 위에 성장된 가네트 박막의 낟알들은 대부분 기판과 같은 [111] 방향으로 정렬하며, 이 경우 박막의 자기 이력 곡선은 5000 Oe 이상에서도 포화 자기화에 도달하지 못하는 것으로 확인되었다. 이러한 현상의 원인으로 회전 자기화 과정 (rotation magnetization process)에 의한 것으로 추정하였다. Pechini 법으로 성장시킨 D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ 박막에서 단위 세포 당 최대 Bi 이온의 양은 2.0 이하임을 처음으로 확인하였고, 이는 LPE법에 의해 성장된 단결정 가네트의 경우에 알려진 최대 Bi이온의 양 2.3보다 작은 값이다.에 알려진 최대 Bi이온의 양 2.3보다 작은 값이다.은 값이다.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.17-21
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• 2000

In order to investigate the dependence of a content in lead lanthanum titanate (PLT) films and heat treatment, sol-gel process has been used. Four types of PLT thin films with the chemical formula, Pb$\_$1-x/ La$\_$x/Ti$\_$1-x/4/O$_3$(X=18, 21, 24 and 28 mole %) have been fabricated on Pt/Ti/SiO$_2$/Si multi-layers and ITO/glass substrates, The post-annealing temperature in the range of 400~700 $\^{C}$ is applied for the formation of perovskite structure in PLT films. The structureal, electrical and optical properties of PLT film with the addition of La content are estimated. The films orientation and surface structure of films are studied by XRD (X-ray diffraction) and SEM(scanning electron microscopy). The P-E hysteresis loop become narrower with increasing La content. The average transmittance of the films is about 80%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.48-51
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• 1997

(Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.207-207
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• 2003

최근 광촉매 재료로 각광받고 있는 TiO$_2$는 band gap 에너지가 3.0-3.2eV로 자외선 영역과 일부 가시광선 영역에서 활성을 갖는 것으로 알려져 있다. 따라서 용액 중에 결정화 및 안정화 되어있는 TiO$_2$의 band gap 에너지를 낮춘다면 가시광 영역의 광반응을 얻을 수 있다. 이에 본 연구는 G. Sato등이 제안한 방법으로 TiO$_2$ sol을 제조할 때 band gap 에너지를 낮추고자 천이 금속원소를 첨가하여 복합 및 담지된 TiO$_2$계 복합 sol을 합성하고자 하였다 출발원료는 TiC1$_4$를 가수분해하여 제조한 TiOCl$_2$에 천이금속원소인 V, Cr, Fe, Ni, Nb 등의 chloride 화합물을 첨가하여 중화 및 세척과정을 거친 후, 과산화수소수에 용해하여 전구체 용액인 titania peroxo용액을 제조하였다 제조된 전구체 용액은 온도와 시간을 변수로 각각 열처리하여 TiO$_2$계 복합 sol을 합성하였다. 제조된 시편은 X-선 회절 분석, 투과전자현미경, particle size analyzer, ζ-potential analyzer 및 UV-VIS Spectrometer 통을 이용하여 천이금속 첨가에 따른 TiO$_2$계 복합 sol의 형성과정과 특성변화를 관찰하였다.

• Korean Chemical Engineering Research
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• 제56권2호
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• pp.156-161
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• 2018

염소법과 졸-겔법으로 $TiO_2$ 광촉매 분말을 제조하였다. 제조방법 및 조건에 따라 촉매의 결정상 형태(아나타제와 루타일)와 비표면적이 변화하는 것을 알 수 있었다. TTIP-sol로 제조한 광촉매가 염소법이나 TBOT-sol로 제조한 광촉매에 비해 methylene blue (MB) 분해 특성이 더 높았으며, 수용액상의 90% 이상의 MB를 제거할 수 있었다. 실험 결과를 통해 $TiO_2$ 광촉매는 단일 아나타제상와 큰 비표면적을 가지면 유기물 분해 특성을 향상될 수 있는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.315-318
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• 2001

The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1078-1084
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• 2002

The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.