• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1138-1145
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• 1998

The sliding wear behavior of Ni-base hardfacing alloy, Deloro 50, was investigated at the contact stresses of 15ksi and 30ksi under the various wear environments. In air at room temperature, Deloro 50 showed lower wear resistance than Stellite 6 even at 15ksi due to the occurrence of severe adhesive wear. This seems to be caused by the lower hardness and work- hardening rate of Deloro 50 than those of Stellite 6. In water at room temperature, Deloro 50 showed as good wear resistance as Stellite 6 at 15ksi. It was considered to be due to that water could effectively prevent metal to metal contact through contacting asperities. However, Deloro 50 showed severe adhesive wear at 30ksi in water at room temperature. It seems to be that the water could not suppress adhesion wear at 30ksi. At $300^{\circ}C$ in air, Deloro 50 exhibited higher wear resistance than Stellite 6 even at 30ksi. It was considered that the oxide glaze layers formed on wear surface during sliding, effectively prevented direct metal-to-metal contacts.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.97-103
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• 2001

Polycrystalline thin films of La$_{2}$3/Sr$_{1}$3/MnO$_3$(LSMO) were prepared by water-based sol-gel processing on thermally oxidized Si(100) substrate. The thickness dependence of the low-field tunnel-type magnetoresistance properties at room temperature was studied. Tunnel-type magnetoresistance at low-field is found to be strongly dependent on film thickness. Maximum value of tunnel-type magnetoresistance of LSMO thin films was appeared at the film thickness of ~1500 $\AA$. This behavior can be explained in terms of dead layer between LSMO thin film and Si(100) substrate and thermal lattice strain effect in the LSMO thin films.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.201-205
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• 2012

The effects of various manganese precursors for the low-temperature selective catalytic reduction (SCR) of $NO_x$ were investigated in terms of structural, morphological, and physico-chemical analyses. $MnO_x/TiO_2$ catalysts were prepared from three different precursors, manganese nitrate, manganese acetate(II), and manganese acetate(III), by the sol-gel method. The manganese acetate(III)-$MnO_x/TiO_2$ catalyst tended to suppress the phase transition from the anatase structure to the rutile or the brookite after calcination at $500^{\circ}C$ for 2 h. It also had a high specific surface area, which was caused by a smaller particle size and more uniform distribution than the others. The change of catalytic acid sites was confirmed by Raman and FT-IR spectroscopy and the manganese acetate(III)-$MnO_x/TiO_2$ had the strongest Lewis acid sites among them. The highest de-NOx efficiency and structural stability were achieved by using the manganese cetate(III) as a precursor, because of its high specific surface area, a large amount of anatase $TiO_2$, and the strong catalytic acidity.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.804-809
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• 1999

Silica films were prepared on Si single crystal substrates by a sol-gel process without DMF using TEOS as a starting material. Films were fabricated by spin coating technique. For films having a composition of TEOS : HCI(1:0.05mol), gelation time, the thickness of films, the formation of cracks and the microstructure of the films were investigated as a function of the molar ratio of $CH_3OH and H_2O$. With 8mol $CH_3OH$, the longest gelation time was measured to be 640hr. The thickness of the coated films was decreased with increasing content of $CH_3OH$. The films were sintered at $500^{\circ}C$ for 1hr with a heating rate of $0.6^{\circ}C$/min. The coated films showed worm-like grains and partially cracked microstructures at an amount of $CH_3OH$ 2mol and 4mol. The addition of more than 8 mole of $CH_2OH$ resulted in crack-free silica films. This suggests that crack-free films can be fabricated by controlling the surface tension energy of the sol solutions without DMF.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.149-161
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• 2004

The fusion of nano technology and information technology is essential to sustain the present growth rate and to induce new industry in this ever-growing information age. Considering Korean industry whose competitiveness lies heavily on information related technologies, this field will be inevitable for future. Nano materials can be described as novel materials whose size of elemental structure has been engineered at the nanometer scale. Materials in the nanometer size range exhibit fundamentally new behavior, as their size falls below the critical length scale associated with any given property. " Bottom-up' techniques involve manipulating individual atoms and molecules. Bottom-up process usually implies controlled or directed self assembly of atoms and molecules into nano structures. It resembles more closely the processes of biology and chemistry, where atoms and molecules come together to create structures such as crystals or living cells. Nano scale sensors are included in the electronics area since the diverse sensing mechanisms are often housed on a semiconductor substrate and usually give rise to an electronic signal. The application of nano technology to the chemical sensors should allow improvements in functionality such as gas sensing. In this presentation, we will discuss about the nano scale information materials and devices fabricated by using the organic/inorganic nano templates.

• Polymer(Korea)
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• v.36 no.4
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• pp.525-530
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• 2012

In this study, silane-crosslinked organic/inorganic composite membranes were prepared by simultaneous irradiation grafting of binary monomer mixtures (styrene and 3-(trimethoxysilyl)propyl methacrylate (TMSPM)) with various compositions onto a poly(ethylene-alt-tetraethylene) (ETFE) film and followed by sol-gel processing and sulfonation to provide a silane-crosslinked structure and a proton conducting ability, respectively. The Fourier transform infrared spectroscopy (FTIR) and thermo gravimetric analysis (TGA) were utilized to confirm the crosslinking of ETFE-g-PS/PTMSPM films. The prepared membranes with similar ion exchange capacity but a different TMSPM content were selected and their membrane properties were compared. The ETFE-g-PSSA/PTMSPM membranes were characterized by water uptake, dimensional stability, and proton conductivity after sulfonation. The membrane electrode assemblies (MEA) of the prepared membranes were fabricated and their single cell performances were measured.