• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.147-150
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• 2008

Multiple ZnO nanorod device detecting $NO_2$ gas was fabricated by sol-gel growth method and gas response characteristics were measured as a chemical gas sensor. The device is mainly composed of sensing electrode and sensing nano material. To acquire high sensitivity of the device for $NO_2$ gas it was heated by a heat chuck up to $400^{\circ}C$ The sensing part was easily made using the CMOS compatible process, for example, the large area and low temperature nano material growth process, etc. The sensors were successfully demonstrated and showed high sensitive response for $NO_2$ gas sensing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.288-293
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• 2017

$Fe_2O_3$ is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of $Fe_2O_3$ have a significant influence on its sensing properties. Many reports are available in the literature on the use of $Fe_2O_3$-based sensors for detecting gases, such as $NO_2$, $NH_3$, $H_2S$, $H_2$, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ${\varepsilon}$-phase $Fe_2O_3$ gas sensor. Pt-doped $Fe_2O_3$ nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at $300^{\circ}C$ showed that $Fe_2O_3$ gas sensors doped with 3%Pt are selective for $NO_2$ gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that $Fe_2O_3$ could be used as a gas sensor for nitrogen dioxide.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.101-107
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• 2001

A highly selective, sensitive and reliable ozone sensing $In_2O_3$ thin film was fabricated by a sol-gel method. The fabricated film is operated at a relatively lower temperature than ever developed thin films and saved operating power. $In_2O_3$ films deposited by sol-gel technique has been recently attracted because it is an economical and energy saving method and precisely controlled microstructure. Indium alkoxide precursor was synthesized from the reaction between indium hydroxide and butanol. PVA binder was used to improve adhesion of the films. The $In_2O_3$ thin films were obtained by spin coating from 1 to 5 times followed by drying at $100^{\circ}C$ and calcining at $600^{\circ}C$ for 1h. The film thickness was controlled by the number of coating time. The morphology and the thickness of the $In_2O_3$ films were examined by a SEM and XRD. The $In_2O_3$ thin films show a high sensitive to ozone gas at operating temperature of $250^{\circ}C$. The $In_2O_3$ sensor has very good selectivity to $CH_4$, CO, $C_4H_{10}$ and ethanol.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.628-633
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• 2008

ZnO nanopowders were synthesized by the sol-gel method using hydrazine reduction, and their gas responses to 6 gases (200 ppm of $C_2H_5OH$, $CH_3COCH_3$, $H_2$, $C_3H_8$, 100 ppm of CO, and 5 ppm of $NO_2$) were measured at $300\;{\sim}\;400^{\circ}C$. The prepared ZnO nanopowders showed high gas responses to $C_2H_5OH$ and $CH_3COCH_3$ at $400^{\circ}C$. The sensing materials prepared at the compositions of [$ZnCl_2$]:[$N_2H_4$]:[NaOH] = 1:1:1 and 1:2:2 showed particularly high gas responses ($S\;=\;R_a/R_g,\;R_a$ : resistance in air, $R_g$ : resistance in gas) to 200 ppm of $C_2H_5OH$($S\;=\;102.8{\sim}160.7$) and 200 ppm of $CH_3COCH_3$($S\;= 72.6{\sim}166.2$), while they showed low gas responses to $H_2$, $C_3H_8$, CO, and $NO_2$. The reason for high sensitivity to these 2 gases was discussed in relation to the reaction mechanism, oxidation state, surface area, and particle morphology of the sensing materials.