• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.209-213
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• 2014

A graft copolymer of poly(vinyl chloride)-g-poly(oxyethylene methacrylate) (PVC-g-POEM) was synthesized via atom transfer radical polymerization (ATRP) and used as a structure-directing agent to prepare $Al@Fe_2O_3$ core-shell nanocomposites through a sol-gel process. The amphiphilic property of PVC-g-POEM allows for good dispersion of Al particles and leads to specific interaction with iron ethoxide, a precursor of $Fe_2O_3$. Secondary bonding interaction in the sol-gel composites was characterized by Fourier transform-infrared (FT-IR) spectroscopy. The well-organized morphology of $Al@Fe_2O_3$ core-shell nanocomposites was observed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Energy dispersive X-ray (EDX) and X-ray diffraction (XRD) were used to analyze the elemental composition and crystallization structure of the composites.

• Applied Chemistry for Engineering
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• v.18 no.2
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• pp.111-115
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• 2007

Bimodally porous ${\gamma}$-alumina granules, including mesopores (2~50 nm) and macropores (>50 nm), were prepared by sol-gel and oil-drop method. Mesopores are made from the voids among the alumina crystallites, while macropores are from the space of the decomposed PS particles used as physical templates during the granulation process. The product ${\gamma}$-alumina granules with the average diameter of 2 mm were characterized by FE-SEM, XRD, FT-IR, $N_2$ porosimetry, and universal mechanical testing system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.120-126
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• 1996

In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Journal of the Korean Applied Science and Technology
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• v.26 no.3
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• pp.288-296
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• 2009

In this study, the silica-based hybrid material with high barrier property was prepared by incorporating ethylene-vinyl alcohol (EVOH) copolymer, which has been utilized as packaging materials due to its superior gas permeation resistance, during sol-gel process. In preparation of this EVOH/$SiO_2$ hybrid coating materials, the (3-glycidoxy-propyl)-trimethoxysilane (GPTMS) as a silane coupling agent was employed to promote interfacial adhesion between organic and inorganic phases. As confirmed from FT-IR analysis, the physical interaction between two phases was improved due to the increased hydrogen bonding, resulting in homogeneous microstructure with dispersion of nano-sized silica particles. However, depending on the range of content of added silane coupling agent (GPTMS), micro-phase separated microstructure in the hybrid could be observed due to insufficient interfacial attraction or possibility of polymerization reaction of epoxide ring in GPTMS. The oxygen barrier property of the mono-layer coated BOPP (biaxially oriented polypropylene) film was examined for the hybrids containing various GPTMS contents. Consequently, it is revealed that GPTMS should be used in an optimum level of content to produce the high barrier EVOH/$SiO_2$ hybrid material with an improved optical transparency and homogeneous phase morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.947-952
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• 2004

Tb-doped lead zirconate titanate(Pb(Zr$\_$0.6/,Ti$\_$0.4/)O$_3$; PZT) thin films on Pt(111)/Ti/SiO$_2$/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 ${\mu}$C/cm$^2$ and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Journal of the Korean Electrochemical Society
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• v.6 no.1
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• pp.13-17
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• 2003

Cryogel and aerogel Pt-Ru/C were synthesized by the sol-gel process for the electrooxidation of methanol. From XRD analysis, it was found that the catalysts had highly dispersed Pt-Ru alloys on carbon support although high temperature treatments have been conducted. Electrocatalytic activities of 3 type aerogel catalysts were investigated in half cell experiments by cyclic voltammetry. Among them, Phloroglucinol-Formaldehyde(PF) type catalyst shows the highest activity. From the results of deactivation test for each catalysts, the aerogel catalysts are found to have excellent durability compared with those prepared by colloidal method.