• Journal of the Korean GEO-environmental Society
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• v.11 no.9
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• pp.47-53
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• 2010

This study was made on the fact that the compressive strength characteristic of the recently developed alkali silica-sol chemical grout material was examined, whose grout material used for this study was designed to understand its strength property through the uniaxial compressive strength test(homo-gel, sand-gel), permeability test, deflection strength test, etc. In order to compare with the engineering characteristics regarding alkali silica-sol grout material and sodium silicate grout material. The uniaxial compressive strength of silica-sol grout material was identified to be increased more than 3~5 times than sodium silicate grout material at the early stage(within 72 hours). When comparing with the uniaxial compressive strengths of Sand-gel and Homo-gel at the material age of 28 days in case of silica-sol grouting material the strength of Sand-gel was measured to be about 1.3 times higher than Homo-gel. In case of silica-sol, it is assumed to have the property to exert high strength when it is actually grouted into the ground. As a result of permeability test it is judged that it is possible to apply the silica-sol to the site in the place requiring the water cut-off as the silica-sol. As a result of testing the strength at the material age of 28 days of grouting-use silica-sol showed more than 3 times' difference than the sodium silicate grouting material.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.22-29
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• 1995

Lithium ionic solid electrolyte was synthesized at $60^{\circ}C$ in $N_{2}$ ambience by sol-gel method, using tetraethyl orthosilcate, lithium methoxide, zirconium n-propoxide, and tributyle phosphate as precursors. The prepared material was dried and crushed into powder, and it was pressed into disk type samples. These samples were sintered at $900^{\circ}C{\sim}1100^{\circ}C$ for 50 hours. The physical characteristics of the samples were investigated by TG/DTA, SEM, AES and XRD methods. $CO_{2}$ sensor based on lithium ionic solid electrolyte was fabricated and its operational characteristics were measured. The sensing characteristics of the sensor sintered at $1000^{\circ}C$ shows the variation of e.m.f. about $35{\sim}63\;mV/decade$ for the variation of $CO_{2}$ concentration at $200^{\circ}C{\sim}300^{\circ}C$ of operating temperature, and good linearity for $300{\sim}6000\;ppm$.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.425-431
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• 2000

Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

• Journal of Information Display
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• v.9 no.3
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.423-430
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• 1987

Characteristics of Al2O3-ZrO2 powders prepared by sol-gel process and their sintering behavior were investigated as a function of calcination temperature. The sol-gel processed powders were calcined at 800, 900, 1000, 1100, 1200$^{\circ}C$, and analyzed by X-ray diffraction technique. Pore size and distribution of green compact of the calcined powders were measured by mercury porosimeter. It is suggested that the optimal temperature of calcination for the sintering of Al2O3-ZrO2 powder prepared by sol-gel process is 1100$^{\circ}C$. In the Al2O3-17vol.% ZrO2 sintered specimen, which was sintered at 1600$^{\circ}C$ for 2hrs in air, 69vol.% tetragonal phse existed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.315-318
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• 2001

The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.414-417
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• 2011

Indium tin oxide (In:$SnO_2$) nanoparticles were synthesized employing a sol-gel combustion method followed by annealing. The TG, XRD, XPS and SEM results of the precursor powders and calcinated In:$SnO_2$ nanoparticles were investigated. Crystal structures were examined by powder XRD, and those results show shaper intensity peak at $25.6^{\circ}$ ($2{\theta}$) of $SnO_2$ by increased annealing temperature. A particle morphology and size was examined by SEM, and the size of the nanoparticles was found to be in the range of 20~30nm. In:$SnO_2$ films could controlled by nanoparticle material at various annealing temperature. The sol-gel combustion method was offered simple and effective route for the synthesis of In:$SnO_2$ nanoparticles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.625-631
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• 2000

In this study, the characteristics and sinterablities of TiO2 powders which were fabricated on sol-gel process and supercritical fluid process were examined. The powders fabricated on sol-gel process were amorphous. The particle size and shape were changed with the amount of water used for hydrolysis of titanium ethoxide. The powders were changed from amorphous to crystalline by heating at 400℃. The crystalline anatase TiO2 powders were directly prepared in ethanol supercritical fluid condition that temperature was 270±3℃ and pressure was 7.3 MPa. It's primary crystalline size was 20 nm and agglomerated as spherical shape whose size was 0.7∼1㎛. The powders prepared on sol-gel process were not sintered densely at 900℃ because of abnormal grain growth. However, the powders which prepared on supercritical fluid process were sintered densely at the comparatively low temperature of 800℃ by ideal growth of grain, which are fired at 900℃.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.369-375
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• 1994

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.