• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• 열처리공학회지
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• 제6권2호
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• pp.70-78
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• 1993

The presence of a residual stress in a thin film affects the properties and performances of the film, so the study of stress in a film must be very important. In this study, therefore, considering the characteristics of PECVD process, it was discussed that the residual stress, measured by $sin^2{\Psi}$ method, fo TiN films deposited on substrates with different TECs (thermal expansion coefficients) changed with film thickness. As a results, it was obtained that the residual stress of TiN film was compressive stress about all kinds of substrates and increased with film thickness. Also, the compressive residual stresses of TiN films increased in Si, Ti, STS304 order. According to the above results, we confirmed that the changes of residual stress of TiN film with substrates were due to the thermal stress originated form the difference in the TECs of the film and substrates, and that the intrinsic stress had dominating effect on the residual stress of TiN film deposited by PECVD. And in this study, the intrinsic stress of TiN film was compressive stress in spite of the Zone 1 structure. It is due to the entrapment of impurities in grain boundary or void.

• 한국대기환경학회지
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• 제19권6호
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• pp.701-717
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• 2003

The objective of this study was to extensively estimate the air quality trends of the study area by surveying con-centration trends in months or seasons, after analyzing the mass concentration of PM-10 samples and the inorganic lements, ion, and total carbon in PM-10. Also, the study introduced to apply the PMF (Positive Matrix Factoriza-tion) model that is useful when absence of the source profile. Thus the model was thought to be suitable in Korea that often has few information about pollution sources. After obtaining results from the PMF modeling, the existing sources at the study area were qualitatively identified The PM-10 particles collected on quartz fiber filters by a PM-10 high-vol air sampler for 3 years (Mar. 1999∼Dec.2001) in Kyung Hee University. The 25 chemical species (Al, Mn, Ti, V, Cr, Fe, Ni, Cu, Zn, As, Se, Cd, Ba, Ce, Pb, Si, N $a^{#}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, TC) were analyzed by ICP-AES, IC, and EA after executing proper pre - treatments of each sample filter. The PMF model was intensively applied to estimate the quantitative contribution of air pollution sources based on the chemical information (128 samples and 25 chemical species). Through a case study of the PMF modeling for the PM-10 aerosols. the total of 11 factors were determined. The multiple linear regression analysis between the observed PM-10 mass concentration and the estimated G matrix had been performed following the FPEAK test. Finally the regression analysis provided source profiles (scaled F matrix). So, 11 sources were qualitatively identified, such as secondary aerosol related source, soil related source, waste incineration source, field burning source, fossil fuel combustion source, industry related source, motor vehicle source, oil/coal combustion source, non-ferrous metal source, and aged sea- salt source, respectively.ively.y.

• 융합보안논문지
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• 제15권4호
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• pp.19-25
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• 2015

비록 디지털방송의 데이터서비스가 방송통신융합의 대표 서비스로 관련 산업계의 관심과 기대를 받고 있지만 현재까지는 방송프로그램 시청 위주의 TV 시청행태와 열악한 데이터서비스 운영 환경 (방송 수신기의 저 사양, 리모컨 조작의 불편함 등)으로 시청자들로부터 대중적인 인지도를 형성하지 못하고 있다. 본 논문은 데이터서비스가 활성화되기 위해서는 시청자의 방송프로그램 시청에 시너지를 더하는 형태로 발전해야 한다는 전문가들의 의견을 바탕으로 데이터 서비스가 방송프로그램의 주요 부가정보를 활용할 수 있는 방법을 제안한다. 이를 위해, 시간이 지나면서 변하는 방송프로그램의 주요 부가정보를 정형적으로 기술하는 방법과 이 부가정보를 디지털방송 표준에 정합된 형태로 정리, 전송하는 방법을 고안하고 활용 사례로 국내 모 개발사와 티커 형태의 시범적 데이터서비스를 개발하였다.

• 한국표면공학회지
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• 제42권3호
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• pp.109-115
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• 2009

Magnesium is one of the lightest metals, and magnesium alloys have excellent physical and mechanical properties such as high stiffness/weight ratios, good castability, good vibration and shock absorption. However their poor corrosion resistance, wear resistance, hardness and so on, have limited their application. To improve these defects, many techniques are developed. Micro arc oxidation(MAO) is a one of the surface treatments under anodic oxidation in which ceramic coating is directly formed on the surface of magnesium alloy. In this study, the characteristics of anodic film were examined after coating the AZ31B magnesium alloy through the MAO process. MAO was carried out in potassium hydroxide, potassium fluoride, and various concentration of sodium silicate in electrolyte. The morphology and chemical composition of the coating layer were characterized by SEM, XRD, EPMA and EDS. The hardness of anodic films was measured by micro-vickers hardness tester. As a result, the morphology and composition of anodic film were changed by concentration of sodium silicate. Thickness and Si composition of anodic film was increased with increasing concentration of sodium silicate in electrolyte. The hardness of anodic film was highly increased when the concentration of sodium silicate was above 40 g/l in electrolyte.

• 센서학회지
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• 제16권6호
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Journal of Korean Biological Nursing Science
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• 제17권1호
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• pp.37-43
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• 2015

Purpose: Stress, depending on its intensity and duration, results in either adaptive or maladaptive physiological and psychological changes in humans. Also, it was found that stressful experiences increase the signs of behavioral despair in rodents. On the other hand, exercise and melatonin treatment is believed to have many beneficial effects on health. Thus, this study was designed to evaluate the anti-depressant effects of physical activity and melatonin against chronic stress-induced depression in rats. Methods: Adult male Sprague-Dawley(SD) rats(200-250g, 7 weeks of age) were subjected to depression induced by chronic stress. Chronic depression was induced with forced-swim stress (FSS) and repeated change of light-dark cycle for 4 weeks. In the last 2 weeks, some rats were confined in a cage enriched with a running wheel, seesaw and chewed a ball from 19:00 to 07:00 every day. Melatonin was injected intra-peritoneally (I.P), and the rats received intraperitoneal injections of melatonin (15 mg/kg). The Forced Swim Test (FST) was performed to evaluate the immobility behaviors of rats for a 5 min test. Results: It was found that, the immobility time in FST was significantly (p<.05) lower in physical exercise ($M=58.83{\pm}22.73$) and melatonin ($M=67.33{\pm}37.73$) than in depressive rats ($M=145.93{\pm}63.16$) without physical activity. Also, TPH positive cell in dorsal raphe was significantly (p<.05) higher in exercise ($M=457.38{\pm}103.21$) and melatonin ($M=425.38{\pm}111.56$) than in depressive rats ($M=258.25{\pm}89.13$). Conclusion: This study suggests that physical activity and melatonin produces antidepressant-like effect on stress-induced depression in rats. So, physical exercise and melatonin may be a good intervention in depression patients.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 한국작물학회지
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• 제55권2호
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• pp.139-143
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• 2010

콩의 생산성을 높이는데 중요한 역할을 하는 효소의 활성변화와 종실 수량과의 관련성을 탐색하기 위해 등숙관련효소인 ADP-glucose pyrophosphorylase(AGP)의 활성변화를 콩 품종별로 등숙기간에 따라 조사한 결과를 요약하면 다음과 같다. 1. 풍산나물콩은 협수 및 잎수가 131개 및 102개로 가장 많았으며, 100립중은 10.4g으로 가장 낮았으나 수량은 275kg/10a으로 가장 높아 물질생산 및 건물축적 효율이 우수한 것으로 나타났는데, 개화시기$(R_1,\;R_2)$에 AGP의 활성도 가장 높은 경향이었다. 2. 품종별 $CO_2$ 동화량은 풍산나물콩이 $20.96{\mu}mol\;m^{-2}s^{-1}$로 가장 많았으며 검정콩1호는 $12.54{\mu}mol\;m^{-2}s^{-1}$로 가장 적었다. 3. 단파흑은 개체당 잎면적이 $3,968cm^2$로 가장 많고 100립중도 30.5g으로 가장 높은 반면 수량은 149kg/10a으로 가장 낮아 건물축적 효율이 가장 낮았으며, 생육단계별 AGP활성도 가장 낮은 수치를 나타냈다. 4. AGP의 small subunit은 60KD의 single band를 나타냈는데 개화기 이후 AGP의 활성변화와 일치하는 경향을 보였다.