• Journal of Powder Materials
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• v.14 no.5
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• pp.287-291
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• 2007

Oxidation behavior and microstructural characteristics of nano-sized Sn powder were studied. DTA-TG analysis showed that the Sn powder exhibited an endothermic peak at $227^{\circ}C$ and exothermic peak at $560^{\circ}C$ with an increase in weight. Based on the phase diagram consideration of Sn-O system and XRD analysis, it was interpreted that the first peak was for the melting of Sn powder and the second peak resulted from the formation of $SnO_2$ phase. Microstructural observation revealed that the $SnO_2$ powder, heated to $1000^{\circ}C$ under air atmosphere, consisted of agglomerates with large particle size due to the melting of Sn powder during heat treatment. Finally, fine $SnO_2$ powders with an average size of 50nm can be fabricated by controlled heat treatment and ultrasonic milling process.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2348-2352
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• 2017

The electrical contact characteristics including temperature rise, contact resistance and arc erosion rate of the $Ag-SnO_2$ materials with increased $SnO_2$ content were investigated during the repeated make-and-break operations. The thickness of arcing melting layer reduces by half and the arc erosion rate decreases more than 70% under 10000 times operations at AC 10 A with the $SnO_2$ content increasing from 15 wt.% to 45 wt.%, on one hand, temperature rise and contact resistance increase obviously but could be reduced to the same order of conventional $Ag-SnO_2$ materials by increasing the contact force. The microstructure evolution and the effect of $SnO_2$ on the arc erosion, contact resistance were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.313-313
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• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.

• Journal of the Korean Chemical Society
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• v.28 no.2
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• pp.109-113
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• 1984

The effects of various supports on the activity and the selectivity for the ethylene oxidation was investigated over$ Ag/{\alpha}-Al_2O_3$ and $Ag/SnO_2$ by Auger, EPR spectroscopy and reaction studies. The results indicate that over $Ag/SnO_2$ catalyst O- chemisorbed on $SnO_2 $participates in the complete oxidation of ethylene lowering the selectivity for the formation of ethylene oxide.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.428-438
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• 1994

In order to investigate the effect of $SnO_2$ on the growth of 123 phase in Y-Ba-Cu-0 system, O.1Sn-doped 123+Sn compact was coupled with Sn-free 123 compact by placing the former on the latter. In case of the coupled samples which were held at $1100^{\circ}C$ for 24hr and then at $970^{\circ}C$ for lhr, 123 phase grew from the surface of O.1Sn-doped 123+Sn compact toward the inner of Sn-free 123 compact. In case of the coupled samples which were held at $1100^{\circ}C$ for 48hr and then at $970^{\circ}C$ for lhr, it was not the 123 phase but Ba-Y-Sn grains that were observed. Ba-Y-Sn grains with a shape of bar was composed of Ba : Y : Sn=5 : 3 : 2, approximately.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Journal of Information Display
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• v.2 no.1
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.776-782
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• 2015

$TiO_2-SnO_2$ nanoparticles with an average diameter of 3~5 nm were synthesized by hydrolysis of titanium tetraisopropoxide (TTIP) and tin chloride to depress the photocatalytic activity of $TiO_2$ nanoparticles. Organic-inorganic hybrid coating solutions were prepared by reacting the $TiO_2-SnO_2$ nanoparticles with 3-glycidoxypropyl trimethoxysilane (GPTMS) by the sol-gel method. The hard coating films with high refractive index were obtained by curing thermally at $120^{\circ}C$ after spin-coating the coating solutions on the polycarbonate (PC) sheets. The coating films from $TiO_2-SnO_2$ nanoparticles showed an improved pencil hardness of 3H compared to 2H of the coating films from $TiO_2$ nanoparticles. Besides, the refractive index of the coating films from $TiO_2-SnO_2$ nanoparticles enhanced from 1.543 to 1.623 at 633 nm as the Sn/Ti molar ratio increased from 0 to 0.5.