• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.694-702
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• 2014

The micron-sized ITO(indium tin oxide) particles were prepared by spray pyrolysis from aqueous precursor solutions for indium, and tin and organic additives solution. Organic additives solution with citric acid(CA) and ethylene glycol(EG) were added to aqueous precursor solution for Indium and Tin. The obtained ITO particles prepared by spray pyrolysis from the aqueous solution without organic additives solution had spherical and filled morphologies whereas the obtained ITO particles with organic additives solution had more hollow and porous morphologies with increasing mole of organic additives. The micron-sized ITO particle with organic additives was changed fully to nano-sized ITO particle whereas the micron-sized ITO particle without organic additives was not changed fully to nano-sized ITO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. The size of primary ITO particle by Debye-Scherrer formula and surface resistance of ITO pellet were measured.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Advances in nano research
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• v.1 no.4
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• pp.193-202
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• 2013

In this article, we present the effects of Ag doping and after-growth thermal annealing on the photoluminescence (PL) and thermoluminescence (TL) behaviors of $SnO_2$ nanoparticles. $SnO_2$ nanoparticles of 4-7 nm size range containing different Ag contents were synthesized by hydrothermal process. It has been observed that the after-growth thermal annealing process enhances the crystallite size and stabilizes the TL emissions of $SnO_2$ nanostructures. Incorporated Ag probably occupies the interstitial sites of the $SnO_2$ lattice, affecting drastically their emission behaviors on thermal annealing. Both the TL response and dose-linearity of the $SnO_2$ nanoparticles improve on 1.0% Ag doping, and subsequent thermal annealing. However, a higher Ag content causes the formation of Ag clusters, reducing both the TL and PL responses of the nanoparticles.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.913-918
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• 2014

Five mol % tungsten-doped tin oxide ($W_{0.05}Sn_{0.95}O_2$, TTO5) was prepared by co-precipitation of $SnCl_4{\cdot}5H_2O$ and $WCl_4$, followed by calcination at $1000^{\circ}C$. The as-prepared TTO5 was in the pure cassiterite phase with a particle size of ~50 nm and optical bandgap of 2.51 eV. Herein it was applied for the formation of TTO5/$TiO_2$ heterojunctions by covering the TTO5 surface with $TiO_2$ by sol-gel method. Under visible-light irradiation (${\lambda}{\geq}420$ nm), TTO5/$TiO_2$ showed a significantly high photocatalytic activity in removing gaseous 2-propanol (IP) and evolving $CO_2$. It is deduced that its high visible-light activity is caused by inter-semiconductor holetransfer between the valence band (VB) of TTO5 and $TiO_2$, since the TTO5 nanoparticle (NP) exhibits the absorption edge at ~450 nm and its VB level is located more positive side than that of $TiO_2$. The evidence for the hole-transport mechanism between TTO5 and $TiO_2$ was also investigated by monitoring the holescavenging reaction with 1,4-terephthalic acid (TA).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.591-596
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• 2013

Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.194-198
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• 2012

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) ${\rightarrow}$ 2268, 2164 (due to In-OH stretching mode) ${\rightarrow}$ 1546 (due to overtones of Sn-O-Sn modes) ${\rightarrow}$ 1412 (due to overtones of Sn-O-Sn modes) $cm^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.361-362
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• 2005

Antimony doped tin oxide(ATO) nano powders have been synthesized by homogeneous precipitation method using $SnCl_4\cdot5H_2O$ for precursor, $SbCl_3$ as doped material and urea. The hydrolysis of urea and conductive mechanism and Heat treatment was performed at the temperature from $500^{\circ}C$ to $700^{\circ}C$ in air. The ATO nano powders are characterized by means of Thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffraction (XRD), Brunauer, Emmett, and Teller adsorption (BET), Scanning electron microscopy (SEM) ATO nano powders with an average size of nm and the highest surface area 129 $m^2g^{-1}$ are obtained.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1388-1390
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• 2013

Macroporous $SnO_2$ foam was successfully synthesized via a simple soft-chemical route by hybridization between alkylamine and tin(IV) oxide. According to X-ray diffraction (XRD) analysis, the as-prepared $SnO_2$ foam had a highly ordered lamella structure along the crystallographic c-axis, which transformed to a rutile phase after thermal treatment at $300^{\circ}C$. X-ray absorption spectroscopy (XAS) at the Sn K-edge revealed that $SnO_2$ particles in the hybrid material maintained their nanosized structure after hybridization with alkylamine. Scanning electron microscope (SEM) images clearly showed that the as-prepared $SnO_2$ foam had a macroporous structure. This synthetic route can be extended to the development of open frameworks with good electrochemical properties in battery applications.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.359-362
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• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.