• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.198-198
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• 2006

SnO2가 첨가된 In2O3(ITO) sputtering 타켓은 넓은 파장영역에서의 투광성과 높은 전기전도도의 특성 때문에 여러 종류의 평판형 디스플레이 제품에 사용되고 있다. 사용된 In2O3와 SnO2 분말은 높은 순도의 금속을 사용하였으며, 공질법을 이용하여 분말을 제조하였으며, 혼합된 In2O3-SnO2 분말은 하소조건과 소결조건에 따라 특성을 평가 하였다. 본 연구의 목적인 ITO sprttering 타켓의 SnO2 분산조건은 하소 온도가 증가함에 따라 분산성이 뛰어났으며, 조사된 30wt% 에서 5wt%로 SnO2의 함량이 감소함에 따라 분산성은 향상되었다. 이러한 결과들로부터 ITO 타켓 밀도와 SnO2의 분산성은 1150C 이상에서 휘발하는 SnO2의 량에 의해 크게 영향을 받는다.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1224-1229
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• 2004

The purpose of this study is to research and develop tin oxide-flyash composite for lithium Ion polymer battery. Tin oxide is one of the promising material as a electrode active material for lithium Ion polymer battery (LIPB). Tin-based oxides have theoretical volumetric and gravimetric capacities that are four and two times that of carbon, respectively. We investigated cyclic voltammetry, AC impedance and charge/discharge cycling of SnO$_2$-flyash/SPE/Li cells. The first discharge capacity of SnO$_2$-flyash composite anode was 639 mAh/g. The discharge capacity of SnO$_2$-flyash composite anode was 563 and 472 mAh/g at 6th and 15th cycle, respectively. The SnO$_2$-flyash composite anode with PVDF-PMMA-PC-EC-LiClO$_4$ electrolyte showed good capacity with cycling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.88-90
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• 2003

The purpose of this study is to research and develop tin oxide-flash composite for lithium Ion polymer battery. Tin oxide is one of the promising material as a electrode active material for lithium Ion polymer battery (LIPB). Tin-based oxides have theoretical volumetric and gravimetric capacities that are four and two times that of carbon, respectively. We investigated cyclic voltammetry and charge/discharge cycling of SnO-flyash/SPE/Li cells. The first discharge capacity of SnO-flyash composite anode was 720 mAh/g. The discharge capacity of SnO-flyash composite anode 412 and 314 mAh/g at cycle 2 and 10 at room temperature, respectively. The SnO-flyash composite anode with PVDF-PMMA-PC-EC-$LiClO_4$ electrolyte showed good capacity with cycling.

• Journal of Electrical Engineering and Technology
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• 제6권3호
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• pp.414-417
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• 2011

Indium tin oxide (In:$SnO_2$) nanoparticles were synthesized employing a sol-gel combustion method followed by annealing. The TG, XRD, XPS and SEM results of the precursor powders and calcinated In:$SnO_2$ nanoparticles were investigated. Crystal structures were examined by powder XRD, and those results show shaper intensity peak at $25.6^{\circ}$ ($2{\theta}$) of $SnO_2$ by increased annealing temperature. A particle morphology and size was examined by SEM, and the size of the nanoparticles was found to be in the range of 20~30nm. In:$SnO_2$ films could controlled by nanoparticle material at various annealing temperature. The sol-gel combustion method was offered simple and effective route for the synthesis of In:$SnO_2$ nanoparticles.

• 한국세라믹학회지
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• 제37권2호
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.52-52
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• 1994

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• 한국재료학회지
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• 제20권9호
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.83-88
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• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.