• 제목/요약/키워드: SnCo

검색결과 529건 처리시간 0.032초

3D-foam 구조의 구리-주석 합금 도금층을 음극재로 사용한 리튬이온배터리의 전기화학적 특성 평가 (Electrochemical Properties of 3D Cu-Sn Foam as Anode for Rechargeable Lithium-Ion Battery)

  • 정민경;이기백;최진섭
    • 한국표면공학회지
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    • 제51권1호
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    • pp.47-53
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    • 2018
  • Sn-based lithium-ion batteries have low cost and high theoretical specific capacity. However, one of major problem is the capacity fading caused by volume expansion during lithiation/delithiation. In this study, 3-dimensional foam structure of Cu-Sn alloy is prepared by co-electrodeposition including large free space to accommodate the volume expansion of Sn. The Cu-Sn foam structure exhibits highly porous and numerous small grains. The result of EDX mapping and XPS spectrum analysis confirm that Cu-Sn foam consists of $SnO_2$ with a small quantity of CuO. The Cu-Sn foam structure electrode shows high reversible redox peaks in cyclic voltammograms. The galvanostatic cell cycling performances show that Cu-Sn foam electrode has high specific capacity of 687 mAh/g at a current rate of 50 mA/g. Through SEM observation after the charge/discharge processes, the morphology of Cu-Sn foam structure is mostly maintained despite large volume expansion during the repeated lithiation/delithiation reactions.

통전 가압 소결된 Co 소결체의 마멸 거동 (Sliding wear behavior of electro-pressure sintered cobalt)

  • 강석하;김태웅;김용석
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 추계학술대회논문집
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    • pp.218-221
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    • 2004
  • Dry sliding wear behavior of electro-pressure sintered Co, $Co-20\;wt.\%$ CuSn and $Co-20\;wt.\%$ WC composites were investigated. Wear tests of the materials were carried out using a pin-on-disk wear tester at various loads of 10N-100N under a constant sliding speed condition of 0.38m/s against glass ($83\%\;SiO_2$) beads. Sliding distances were varied with a range of $100m{\sim}600m$. A scanning electron microscopy was used to examine morphologies of worn surfaces, cross-sections, and wear debris. The $Co-20\;wt.\%$ WC composite had the highest and the $Co-20\;wt.\%$ CuSn composite showed the lowest wear resistance among the tested materials. All specimens exhibited low friction coefficients ranging from 0.12 to 0.4 at the applied load of 100N.

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방폭형 LNG/LNG 및 솔벤트 센서 (Explosion-proof LNG/LPG and solvent sensors)

  • 차성익;신백균;이붕주;주상현;김종원;민남기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1475-1477
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    • 2003
  • 본 논문에서는 LNG/LPG 센서와 솔벤트 센서를 국산화한 결과를 보고한다. LNG/LPG 센서는 $SnO_{2-}\;WO_3$ 모물질에 Pd, Pt 촉매를 첨가하여 제작하였다. 센서를 $400^{\circ}C$ 이상에서 동작시키면 CO가 촉매층에서 거의 $CO_2$로 산화되어 감지막의 저항변화에 아무런 기여도 못하기 때문에 팔라듐 촉매 센서부와 백금촉매 센서부의 신호로부터 탄화수소와 CO를 구별할 수 있다. 또한 촉매층 위에 다공성 보호층를 형성하여 촉매층과 감지막을 보호함으로써 장기 안정성이 크게 향상 되었다. 한편, 감지물질로 $BaSnO_3$를 사용해 제작된 솔벤트 센서는 에탄올에 매우 우수한 감도와 선택성을 나타내었다.

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Heterogeneous SnCl2/SiO2 versus Homogeneous SnCl2 Acid Catalysis in the Benzo[N,N]-heterocyclic Condensation

  • Darabi, Hossein Reza;Aghapoor, Kioumars;Mohsenzadeh, Farshid;Jalali, Mohammad Reza;Talebian, Shiva;Ebadi-Nia, Leila;Khatamifar, Ehsan;Aghaee, Ali
    • Bulletin of the Korean Chemical Society
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    • 제32권1호
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    • pp.213-218
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    • 2011
  • The scope of homogeneous Lewis acid-catalyzed benzo[N,N]-heterocyclic condensation was expanded to include the use of various metal salts not reported in the literature and $SnCl_2{\cdot}2H_2O$ was finally selected. Among various solid supports activated with $SnCl_2$, heterogeneous $SnCl_2/SiO_2$ proved to be the most effective and significantly higher conversions were achieved compared to $SnCl_2{\cdot}2H_2O$ itself. The results of TG-DTA and BET indicated that dispersed $SnCl_2$ coordinates with surface hydroxyl groups of silica leading to formation of stable Lewis acid sites. Low catalyst loading, operational simplicity, practicability and applicability to various substrates render this eco-friendly approach as an interesting alternative to previously applied procedures.

구상흑연주철의 내마모성에 미치는 Sb 및 Sn 의 영향에 관한 연구 (The Effects of Antimony and Tin Addition on the wear resistance properties of ductile cast iron)

  • 권영훈;김창규;김복석;김성한;천병욱;최창옥
    • 한국주조공학회지
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    • 제11권6호
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    • pp.463-474
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    • 1991
  • The effect of $0.01{\sim}0.10%$ Sb and Sn on the wear resistance of ductile cast iron was investigated. The hardness was increased with Sb to 0.10%, but the elongation and the impact value were decreased. The tensile strength was increased with up to 0.05% Sb, however decreased with $0.05{\sim}0.10%$ Sb. The hardness and the tensile strength were increased and the elongation was decreased with up to 0.10% Sn. The nodularity of graphite was decreased with above 0.08% Sb however Sn had no effect on that. When the maximum compressive stress was low ($42kg.f/mm^2$), the weigth loss was decreased with increased hardness and when that was high ($54kg.f/mm^2$ and $65kg.f/mm^2$), the weight loss did not depend upon the hardness. The pearlite stabilization with Sb and Sn increased with the wear resistance of ductile cast iron.

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Dependence of the Structural and Electrical Properties of Co-Sputtered Zn-Doped ITO Thin Films on the Composition and Oxygen Partial Pressure

  • Heo, Gi-Seok;Kim, EunMi
    • 한국세라믹학회지
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    • 제50권4호
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    • pp.288-293
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    • 2013
  • Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

PLD법으로 제조된 $CuSb_2O_6-SnO_2$ 박막의 전기.광학적 특성 (Preparation and Properties of $CuSb_2O_6$-doped $SnO_2$ Thin Films by Pulsed Laser Deposition)

  • 이채종;변승현;이희영;허영우;이준형;김정주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.262-263
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    • 2007
  • Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

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근권 토양과 뿌리로부터 분리된 Bacillus sp.의 항진균 활성, 식물 생장 촉진 활성 및 미네랄 가용화능 비교 (Comparison of Antifungal Activity, Plant Growth Promoting Activity, and Mineral-Solubilizing Ability of Bacillus sp. Isolated from Rhizosphere Soil and Root)

  • 김희숙;오가윤;이송민;김지윤;이광희;이상현;장정수
    • 한국미생물·생명공학회지
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    • 제49권4호
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    • pp.576-586
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    • 2021
  • 본 연구는 근권 토양 및 뿌리에 존재하는 미생물 중 미생물 제제로 적합한 Bacillus sp.을 선별하기 위하여 10종의 식물 병원성 곰팡이에 대한 항진균 활성, 식물 생장 촉진 활성 및 미네랄 가용화능을 평가하였다. 식물 병원성 곰팡이에 대한 항진균 활성은 Bacillus sp.에 따른 차이를 보였으며, 선별된 균주 중 DDP4, DDP16, DDP148, SN56, SN95는 9종 이상의 식물 병원성 곰팡이에 대해 항진균 활성을 나타내었다. 질소고정능과 1-aminocyclopropane-1-carboxylic acid deaminase 생성능에서는 Bacillus sp. 모두 비슷한 수준으로 활성을 나타냈으며, siderophore 생성능은 ANG42와 DDP427에서 비교적 높게 나타났다. Indole-3-acetic acid 생성능은 1.83-67.91 ㎍/ml으로 확인되었으며, Bacillus sp.에 따른 활성 차이를 나타내었다. 이후 각 species마다 활성이 높은 1 균주씩 선정하여 미네랄 가용화능을 확인한 결과, 대부분의 Bacillus sp.에서 인산과 탄산칼슘 가용화능을 확인할 수 있었으며, DDP148과 SN56은 각각 규소 가용화능과 아연 가용화능도 나타내었다. 따라서, 본 연구에서 분리한 Bacillus sp.의 항진균 활성, 식물 생장 촉진 활성 및 미네랄 가용화능 결과를 통해 다목적 기능을 가진 미생물 제제로써 활용이 가능할 것으로 판단된다.

ZrS 분말표면상에 $SnO_2$코팅막의 형성 (Formation of $SnO_2$Coating Layer on the Surface of ZnS Powders)

  • 강승구;김강덕
    • 한국세라믹학회지
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    • 제38권3호
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    • pp.287-292
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    • 2001
  • 본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

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전자빔증발법에 의한 Ba(Ti,Sn)O3막의 제조 및 특성 (Synthesis and Properties of Ba(Ti,Sn)O3 Films by E-Beam Evaporation)

  • 박상식
    • 한국재료학회지
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    • 제18권7호
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    • pp.373-378
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    • 2008
  • $Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti+Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti+Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.