• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• Transactions of the KSME C: Technology and Education
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• v.1 no.1
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• pp.7-12
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• 2013

Tin oxide thin-films have been widely applied in various fields of high-technology industries due to their excellent physical and electric properties. Those applications are found in various sensors, heating elements of windshield windows, solar cells, flat panel displays as tranparent electrodes. In this study, we conducted an experiment for the deposition of $SnO_2$ on glass of 2nd Gen. size for the effective development of large-scale backplanes. As deposition temperatures or flow rates of the $SnCl_4$ as a precursor changed, the thickness of tin oxide thin-films, their sheet resistances, transmittances, and hazes varied considerably.

• Journal of Integrative Natural Science
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• v.10 no.4
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• pp.245-248
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• 2017

The Cu and CuSn/PVP nanofibers were fabricated by electrospinning method by controlling various parameters. The precursor solution was prepared with copper(II) acetate monohydrate ($Cu(CH_3COO)_2$) and tin chloride dihydrate ($SnCl_2{\cdot}2H_2O$), and polyvinylpyrrolidone (PVP) for adjusting viscosity. The fabricated nanofibers were calcined at 873 K in Ar atmospheric environment for 5 hours to remove the solvent and polymer. The morphology and diameter of nanofibers were measured by optical microscopy (OM) with Motic image plus 2.0 program. The components and chemical environment were investigated with X-ray photoelectron spectroscopy (XPS). From the XPS survey spectra, we confirmed that CuSn/PVP nanofibers were successfully fabricated. The XPS peaks of C 1s and N 1s were remarkably decreased after calcination of the nanofibers at 873 K. It implies that the PVP was completely decomposed after calcination at 873 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.361-362
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• 2005

Antimony doped tin oxide(ATO) nano powders have been synthesized by homogeneous precipitation method using $SnCl_4\cdot5H_2O$ for precursor, $SbCl_3$ as doped material and urea. The hydrolysis of urea and conductive mechanism and Heat treatment was performed at the temperature from $500^{\circ}C$ to $700^{\circ}C$ in air. The ATO nano powders are characterized by means of Thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffraction (XRD), Brunauer, Emmett, and Teller adsorption (BET), Scanning electron microscopy (SEM) ATO nano powders with an average size of nm and the highest surface area 129 $m^2g^{-1}$ are obtained.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1135-1138
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• 2009

Hollow Sn and Pb nanoparticles have been prepared by a rapid injection of an aqueous solution of $SnCl_2$- poly(vinylpyrrolidone) (PVP, surfactant) and $Pb(OAc)_2${\cdot}$3H_2O-PVP$ into an aqueous solution of sodium borohydride (reducing agent) in simple, one-pot reaction at room temperature under an argon atmosphere, respectively. The two hollow nanoparticles have been fully characterized by TEM, HRTEM, SAED, XRD, and EDX analyses. Upon exposure to air, the black Pb hollow nanoparticles are gradually transformed into a mixture of Pb, litharge (tetragonal PbO), massicot (orthorhombic PbO), and $Pb_5O_8$. The order and speed of mixing of the reactants between the metal precursor-PVP and the reductant solutions and stoichiometry of all the reactants are crucial factors for the formation of the two hollow nanocrystals. The Sn and Pb hollow nanoparticles were produced only when 1:(1.5-2) and 1:3 ratios of the Sn and Pb precursors to $NaBH_4$ were employed with a rapid injection, respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.11-14
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• 2000

Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.