• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.133-137
• /
• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.1
• /
• pp.86-91
• /
• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.345-350
• /
• 2014

The surface oxidation mechanism of lead-free solder alloys has been investigated with multiple reflow using X-ray photoelectron spectroscopy. It was found that the solder surface of Sn-Ag-Cu-In solder alloy is surrounded by a thin $InO_x$ layer after reflow process; this coating protects the metallic surface from thermal oxidation. Based on this result, we have performed a wetting balance test at various temperatures. The Sn-Ag-Cu-In solder alloy shows characteristics of both thermal oxidation and wetting balance better than those of Sn-Ag-Cu solder alloy. Therefore, Sn-Ag-Cu-In solder alloy is a good candidate to solve the two problems of easy oxidation and low wettability, which are the most critical problems of Pb-free solders.

• Journal of Welding and Joining
• /
• v.20 no.1
• /
• pp.91-96
• /
• 2002

Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

• Archives of Metallurgy and Materials
• /
• v.65 no.4
• /
• pp.1329-1333
• /
• 2020

In this study, we have developed Sn-Ag alloy by a simple high energy ball milling technique. We have ball-milled the eutectic mixture of Sn and Ag powders for a period of 45 h. The milled powder for 45 h was characterized for particle size and morphology. Microstructural investigations were carried out by scanning electron microscopy and X-ray diffraction studies. The melting behavior of 45 h milled powder was studied by differential scanning calorimetry. The resultant crystallite size of the Sn(Ag) solid solution was found to be 85 nm. The melting point of the powder was 213.6℃ after 45 h of milling showing depression of ≈6℃ in melting point as compared to the existing Sn-3.5Ag alloys. It was also reported that the wettability of the Sn-3.5Ag powder was significantly improved with an increase in milling time up to 45 h due to the nanocrystalline structure of the milled powder.

• Proceedings of the KWS Conference
• /
• 2003.05a
• /
• pp.37-39
• /
• 2003

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.41-46
• /
• 2005

A systematic investigation of shear testing was conducted to find a relationship between Ni-Sn intermetallic spatting and the brittle fracture observed in electroless Ni(P)/solder interconnection. Brittle fracture was found in the solder joints made of Sn-3.5Ag, while only ductile fracture was observed in a Cu-containing solder (Sn-3.0Ag-0.5Cu). For Sn-3.0Ag-0.5Cu joints, $(Ni,Cu)_3Sn_4$ and/or $(Cu,Ni)_6Sn_5$ compound were formed at the interface without spatting from the Ni(P) film. For Sn-3.5Ag, $Ni_3Sn_4$ compound was formed and brittle fracture occurred in solder pads where $Ni_3Sn_4$ had spalled. From the analysis of fractured surfaces, it was found that the brittle fracture occurs through the $Ni_3SnP$ layer formed between $Ni_3Sn_4$ intermetallic layer and the Ni(P) film. Since the $Ni_3SnP$ layer is getting thicker during/ after $Ni_3Sn_4$ spatting, suppression of $Ni_3Sn_4$ spatting is crucial to ensure the reliability of Ni(P)/solder system.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.126-129
• /
• 2002

This article presents that the affecting factors to solderability and initial reliability. It was discussed that effect of the solder ball hardness and composition on the reliability of solder joints. In this study, lead free solder alloys with compositions of Sn-Cu, Sn-Ag, Sn-Ag-Cu, Sn-Ag-Cu-Bi were applied to the $\muBGA$ packages. As a result of experiments, the high degree of hardness with the displacement of 0.22mm was obtained Sn-2.0Ag-0.7Cu-3.0Bi. The shear strength of lead free solder was higher than of Sn-37Pb solder, and it was increased about 150% in Sn-2.0Ag-0.7Cu-3.0Bi.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.63-67
• /
• 2003

Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.4 s.33
• /
• pp.43-48
• /
• 2004

Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.