• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.218-223
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• 2004

Thin film gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is acetonitrile ($CH_{3}CN$) that is simulant gas of blood agent gas. Sensing materials are $SnO_{2}$, $SnO_{2}$/Pt, and (Sn/Pt)oxidation with thickness from $1000{\AA}$ to $3000{\AA}$. Sensor was consisted of sensing electrode with interdigit (IDT) type in front side and a heater in back side. Its dimension was $7{\times}10{\times}0.6mm^{3}$. Fabricated sensor was measured as flow type and monitored real time using PC. The optimal sensing material for $CH_{3}CN$ was {Sn($3000{\AA}$)/Pt($30{\AA}$)}oxidation and its sensitivity and operating temperature were 30%, $300^{\circ}C$ in $CH_{3}CN$ 3 ppm.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1535-1537
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• 2003

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

• Journal of Environmental Science International
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• v.21 no.6
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• pp.655-659
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• 2012

This study elucidates the COD removal of dye (Rhodamine B) through electrochemical reaction. Effects of current density (7.2 to 43.3 $mA/cm^2$), electrolyte type (NaCl, KCl, $Na_2SO_4$, HCl), electrolyte concentration (0.5 to 2.0 g/L), air flow rate (0 to 4 L/min) and pH (3 to 11) on the COD removal of Rhodamine B were investigated. The observed results showed that the increase of pH decrease the COD removal efficiency. Whereas, the increase of current density;NaCl concentration and air flow rate caused the increase of the COD removal of Rhodamine B.

• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.207-212
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• 2023

H₂S is a toxic and harmful gas, even at concentrations as low as hundreds of parts per million; thus, developing an H₂S sensor with excellent performance in terms of high response, good selectivity, and fast response time is important. In this study, an H₂S sensor with a high response and fast response time, consisting of a sensing material (SnO₂), an electrode, a temperature sensor, and a micro-heater, was developed using micro-electro-mechanical system technology. The developed H₂S sensor with a micro-heater (circular type) has excellent H₂S detection performance at low H₂S concentrations (0-10 ppm), with quick response time (<16 s) and recovery time (<65 s). Therefore, we expect that the developed H₂S sensor will be considered a promising candidate for protecting workers and the general population and for responding to tightened regulations.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• Journal of Environmental Health Sciences
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• v.35 no.3
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• pp.201-208
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• 2009

Oxidation of phenol in aqueous media by electro-Fenton process using Ru-Sn-Sb/graphite electrode has been studied. Hydrogen peroxide was electrically generated by reaction of dissolved oxygen in acidic solutions containing supporting electrolyte and $Fe^{2+}$ was added in aqueous media. Phenol degradation experiments were performed in the presence of electrolyte media at pH 3. Effect of operating parameters such as current, electrolyte type (NaCl, KCl and $Na_2SO_4$) and concentration, $Fe^{2+}$ concentration, air flow rate and phenol concentration were investigated to find the best experimental conditions for achieving overall phenol removal. Results showed that current of 2 A, NaCl electrolyte concentration of 2g/l, 0.5M concentration of $Fe^{2+}$, air flow rate of 1l/min were the best conditions for mineralization of the phenol by electro-Fenton.

• Journal of Oral Medicine and Pain
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• v.21 no.1
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• pp.115-122
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• 1996

This study was performed to compare the anticarious effect of the different fluoride adsorbed(Naf, $NH_4F, Na_2PO_3F, SnF_2, TiF_4$) on synthetic hydroxyapatite and enamel. The amount of fluoride adsorbed in synthetic hydroxyapatite under various concentrations and pH of these fluoride solutions was measured by specific electrode. Enamel samples treated with 5 kinds of 1,000ppm fluoride solutions for 10 minutes were evaluated for fluoride uptake and enamel soubility. The results were as follows. 1. The adsorption of fluoride on synthetic hydroxyapatite increased gradually by the concentration of the fluoride solution, In 1,000ppm fluoride solution, the adsorption of fluoride on synthetic hydroxyapatite treated with NH4F and NaF solutions at pH 4.0 was relatively higher than that of other fluoride solutions. In NH4F and NaF solutions, the adsorption of fluoride on powdered enamel was higher at pH 4.0 solution than at pH 7.0 solution. 2. Fluoride uptake from NH4F solution was relatively high. But that from $Na_2PO_3F$ solution was lower than those from other fluoride solutions. 3. Fluoride solutions were significantly effective on enhancing acid resistance. $NH_4F$ solution was relatively more effective than others on enhancing acid resistance. 4. $SnF_2 and TiF_4$ solutions had the same effect on fluoride adsorption, fluoride uptake, and enamel solubility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.361-364
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.