• 제목/요약/키워드: Sn doping

검색결과 112건 처리시간 0.024초

One-Step β-Li2SnO3 Coating on High-nickel Layered Oxides via Thermal Phase Segregation for Li-ion Batteries

  • Seongmin Kim;Hanseul Kim;Sung Wook Doo;Hee-Jae Jeon;In Hye Kim;Hyun-seung Kim;Youngjin Kim
    • Journal of Electrochemical Science and Technology
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    • 제14권3호
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    • pp.293-300
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    • 2023
  • The global energy storage markets have gravitated to high-energy-density and low cost of lithium-ion batteries (LIBs) as the predominant system for energy storage such as electric vehicles (EVs). High-Ni layered oxides are considered promising next-generation cathode materials for LIBs owing to their significant advantages in terms of high energy density. However, the practical application of high-Ni cathodes remains challenging, because of their structural and surface instability. Although extensive studies have been conducted to mitigate these inherent instabilities, a two-step process involving the synthesis of the cathode and a dry/wet coating is essential. This study evaluates a one-step β-Li2SnO3 layer coating on the surface of LiNi0.8Co0.2O2 (NC82) via the thermal segregation of Sn owing to the solubility limit with respect to the synthesis temperature. The doping, segregation, and phase transition of Sn were systematically revealed by structural analyses. Moreover, surface-engineered 5 mol% Sn-coated LiNi0.8Co0.2O2 (NC82_Sn5%) exhibited superior capacity retention compared to bare NC82 owing to the stable surface coating layer. Thus, the developed one-step coating method is suitable for improving the properties of high-Ni layered oxide cathode materials for application in LIBs.

Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3 Thin Films Deposited by Radio Frequency Magnetron Sputtering

  • Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.182-185
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    • 2010
  • $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

진공증착법에 의한 $In_2O_3$ 투명전도막의 제작 (Fabrication of Transparent Conducting Films of $In_2O_3$ by Vacuum Deposition)

  • 이기선
    • 대한전자공학회논문지
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    • 제17권5호
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    • pp.43-47
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    • 1980
  • 전자선가열 도착법에 의해 ∼ 10-4 Torr의 산소 분권기중에서 In2O3 투명전도막을 제작하였으며, 막의 최적 훈착조건과 그의 전기적, 광학적 성질을 측정, 분석하였다. 최적 증착조건은 증착구도 3∼7 A/sec, 기판온도 300℃이상, SnO2 첨가률 2∼5 wt. % 이었으며, 이러한 조건하에서 막피 비저항은 2 × 10-4 Ω·cm 이었고, 가시광 투과률은 85∼90% 이었다.

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기계화학적 방법으로 합성한 Cu2Zn(Sn,Ge)S4 나노결정과 이를 이용하여 제조한 태양전지 (Mechanochemically Synthesized Cu2Zn(Sn,Ge)S4 Nanocrystals and Their Application to Solar Cells)

  • 박보인;이승용;이도권
    • Current Photovoltaic Research
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    • 제4권3호
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    • pp.114-118
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    • 2016
  • $Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

V의 고용이 Malayaite의 결정 및 발색에 미치는 영향 (Effect of V-doping on Colour and Crystallization of Malayaite Pigments)

  • 주인돈;이병하
    • 한국세라믹학회지
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    • 제47권4호
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    • pp.302-307
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    • 2010
  • This study aims to synthesize emerald-green malayaite pigments using $CaCO_3$, $SiO_2$, $SnO_2$ and $V_2O_5$. For this purpose, the optimum composition is $CaV_{0.25}Sn_{0.687}SiO_5$ and heating condition is at $1250^{\circ}C$ for 6 h of soaking time. The samples were characterized by X-ray diffraction (XRD), the Fourier Transform Infrared Spectrometers(FT-IR), the Raman Spectrometer, Scanning Electron Microscope(SEM) and the UV/Vis spectroscopy. The substituted V ion for Sn was observed to be quadrivalence. The analytical results of the synthesized pigment showed the tetragonal crystal, a typical form of Malayaite, and the particle size to be approximately $5{\sim}10\;{\mu}m$. The color in lime glaze added 12 wt% pigment was emerald green, and CIE Lab parameters are $L^*=67.73$, $a^*=-12.39$ and $b^*=9.28$.

Electrical and Optical Properties of Ga-doped SnO2 Thin Films Via Pulsed Laser Deposition

  • Sung, Chang-Hoon;Kim, Geun-Woo;Seo, Yong-Jun;Heo, Si-Nae;Huh, Seok-Hwan;Chang, Ji-Ho;Koo, Bon-Heun
    • 한국표면공학회지
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    • 제44권4호
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    • pp.144-148
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    • 2011
  • $Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

Effect of FTO coated on stainless steel bipolar plate for PEM fuel cells

  • 박지훈;장원영;변동진;이중기
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.55.2-55.2
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    • 2009
  • A polymer electrolyte membrane (PEM) fuel cell has been getting large interest as a typical issue in useful applications. The PEMFC is composed of a membrane, catalyst and the bipolar plate. SnOx:F films on SUS316 stainless steel were prepared as a function of substrate with using electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) in order to achieve the corrosion-resistant and low contact resistance bipolar plates for PEM fuel cells. The SnOx:F films coated on SUS316 substrate at surface plasma treatment for excellent stability, before/after heat treatment for good crystalline structure and microwave power for were characterized by X-ray diffraction (XRD), auger electron microscopy (AES) and field emission-scanning electron microscopy (FE-SEM). The SnOx:F film coated on SUS316 substrate with various process parameters were able to observe optimum interfacial contact resistance (ICR) and corrosion resistance. It can be concluded that fluorine-doping content plays an important function in electrical property and characteristic of corrosion-protective film.

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Photoluminescence properties of Mn4+-activated Li2ZnSn2O6 red phosphors

  • Choi, Byoung Su;Lee, Dong Hwa;Ryu, Jeong Ho;Cho, Hyun
    • Journal of Ceramic Processing Research
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    • 제20권1호
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    • pp.80-83
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    • 2019
  • The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

AFM을 이용한 PECVD에 의해 증착된 Sb-doped $SnO_2$ 박막의 표면형상에 관한 연구 (AFM Studies on the Surface Morphology of Sb-doped $SnO_2$ Thin Films Deposited by PECVD)

  • 윤석영;김근수;이원재;김광호
    • 한국재료학회지
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    • 제10권8호
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    • pp.525-531
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    • 2000
  • 플라즈마 화학증착법을 이용하여 Corning glass 1737 기판에 안티몬 도핑 산화주석 박막을 증착하였다. 플라즈만 화학증착시 반응변수에 따른 박막의 결정상 및 형성된 표면거칠기에 대하여 XRD와 AFM을 이용하여 검토하였다. 반응온도 $450^{\circ}C$, 유입가스비 R[$P_{SbCl}P_{{SnCl}_4}$]=1.12, r.f. power 30W에서 비교적 결정성이 뛰어난 박막을 얻을 수 있었다. 화학증착법(TCVD)에 비해 플라즈마 열화학증착법(PECVD)으로 얻은 박막의 표현형상이 보다 균일하였다. 안티몬 도핑농도가 증가할수록, 증착온고가 낮을수록, 증착두께가 작을수록 박막의 표면거칠기가 보다 감소하였다.

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$[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$의 Dielectric Properties 및 Temperature Characteristics에 미치는 $Bi_2O_3$의 영향 (Effect of $Bi_2O_3$ on Dielectric Properties and Temperature Characteristics of $[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$)

  • 이병하;이경희;윤영호;손상철;유광수
    • 한국세라믹학회지
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    • 제30권5호
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    • pp.397-403
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    • 1993
  • Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10+[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and +85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

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