• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• 센서학회지
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• 제11권3호
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• pp.155-162
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• 2002

CO 기체 감지 특성을 향상시키기 위해서 3 mol% ZnO를 첨가한 $SnO_2$와 3mol% $SnO_2$를 첨가한 ZnO의 적층 형태를 변화시켜 연구하였다. 적층 구조는 단일층, 복층, 그리고 이종층 구조로 후막 인쇄법을 사용하여 제작하였다. $SnO_2$-ZnO계에서 제 2상은 발견되지 않았다. 전도성은 $SnO_2$에 ZnO를 첨가하면 감소하고, ZnO에 $SnO_2$를 첨가하면 증가하였다. 측정 온도증가와 CO 기체 유입으로 전도성은 증가하였다. 단층 및 복층의 후막센서 구조의 감도 향상은 없었으나, $SnO_2$ 3ZnO-ZnO $3SnO_2$/substrate 구조의 이종층 센서의 감도는 향상되었다. 센서 구조에 관계없이 I-V 변화는 모두 직선성을 나타내서 Ohmic 접합 특성을 이루고 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.30-30
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• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.388-393
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• 2018

Sublimation of $Bi_2O_3$-based materials is an important degradation issue for the long-term applications of many electronic devices. A series of $SnO_2$-doped $Bi_2O_3$ materials (SBO), was synthesized, densified, and then tested in air or strong reducing atmosphere. The $SnO_2$-doping effects and sublimation kinetics of the SBO materials were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and precise mass loss measurement. The results show that formation of $Bi_2Sn_2O_7$ phase greatly retards the mass loss of SBO. The SBO samples show a surface sublimation in an energy of $52.6kJ{\cdot}mol^{-1}$. However, the sublimation is also controlled by surface microstructure as the amount of vaporizing species (the Bi or gaseous Bi-oxides) is more than 0.1 mass%. The evaporation is retarded on the rough surface and the mechanism of surface evaporation is changed to diffusional control.

• 한국재료학회지
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• 제23권8호
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• pp.435-440
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• 2013

Transparent and conducting thin films of Ta-doped $SnO_2$ were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of $SnO_2$ decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (${\rho}{\sim}1.1{\times}10^{-3}{\Omega}{\cdot}cm$) for 10 wt% Ta-doped $SnO_2$ film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped $SnO_2$ film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.

• 센서학회지
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• 제10권4호
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• pp.222-231
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• 2001

$SnO_2$의 물성을 $Fe_2O_3$ 첨가량, 산소분압, CO 기체농도, 그리고 온도의 함수로서 관찰하였다. 시편은 후막인쇄 기법으로 알루미나 기판 위에 제조하였다. $700^{\circ}C$/6h 소성한 시편들의 $Fe_2O_3$첨가량에 따른 미세구조와 입자분포의 차이는 거의 없었다. $Fe_2O_3$를 첨가하지 않은 $SnO_2$의 전기적 성질은 소성온도가 낮은 경우와 산소분압이 낮은 경우에 전도성이 높게 측정되었다. $Fe_2O_3$를 첨가한 $SnO_2$의 전도성은 측정온도 증가로 증가하지만 $Fe_2O_3$ 첨가량 증가로 전도성은 감소하였다. 산소분압 의존성은 $Fe_2O_3$ 첨가로 감소하였다. CO 가스에 대한 기체 센서 특성 중 감도는 $350^{\circ}C$, 0.1 mol% $Fe_2O_3$를 첨가한 경우에 가장 높았고, 재현성 및 응답성도 양호하게 나타났다.

• 열처리공학회지
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• 제31권3호
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• 한국결정성장학회지
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• 제33권2호
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• pp.83-90
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• 2023

최근 전력반도체 소재로 관심을 가지는 Ga₂O₃의 β-상은 열역학적으로 가장 안정한 상을 가지며 4.8~4.9 eV의 넓은 밴드갭과 8 MV/cm의 높은 절연파괴전압을 갖는다. 이러한 우수한 물리적 특성으로 인해 전력반도체 소재로 많은 주목을 받고 있다. β-Ga₂O₃는 SiC 및 GaN의 소재와는 다르게 액상이 존재하기 때문에 액상 성장법으로 단결정 성장이 가능하다. 하지만 성장한 순수 β-Ga₂O₃ 단결정은 전력 소자에 적용하기에는 낮은 전도성으로 인해 의도적으로 제어된 도핑 기술이 필요하며 도핑 특성에 관한 연구가 매우 중요하다. 이 연구에서는 Ga₂O₃ 분말과 SnO₂ 분말의 몰 비율을 다르게 첨가하여 Un-doped, Sn 0.05 mol%, Sn 0.1mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%의 혼합분말을 제조하여 EFG(Edge-defined Film-fed Growth) 방법으로 β-Ga₂O₃ 단결정을 성장시켰다. 성장된 β-Ga₂O₃ 단결정의 Sn dopant 함량에 따른 결정 품질 및 광학적, 전기적 특성 변화를 분석하였으며 Sn 도핑에 따른 특성 변화를 광범위하게 연구하였다.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.917-923
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• 2005

In this paper, effect of catalytic configuration on the sensing properties of $SnO_2$ nanoparticle gas sensitive thick film was investigated. Two types of catalytic configuration, mono and binary, were made on the $SnO_2$ nanoparticle. In case of mono catalytic system, $3 wt\%$ Pd or Pt catalyst was doped onto the $SnO_2$ nanoparticle, respectively. In case of binary catalytic system, Pd and Pt was doped simultaneously with concentration ratio of 1:2 to 2:1 onto the $SnO_2$ nanoparticle. After doping, gas sensitive thick film was printed on alumina substrate and heat-treated at 450 to $600^{\circ}C$. Gas sensing properties was evaluated using 500 to 10,000 ppm $CH_4$ gas. As a result, gas sensitive thick film with binary catalytic system showed unstable phenomena that the gas sensitivity was changed according to aging time. In contrary, the mono catalytic system showed relatively stable phenomena despite of aging time. Especially, gas sensitive thick film doped with $3 wt\%$ Pt catalyst and heat-treated at $500^{\circ}C$ showed good sensing properties such as 0.57 of $R_{3500}/R_{1000}$ and very small variation within $3.5\%$ after aging for 5 hours, and response time was very short less than 20 seconds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.198-198
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• 2006

SnO2가 첨가된 In2O3(ITO) sputtering 타켓은 넓은 파장영역에서의 투광성과 높은 전기전도도의 특성 때문에 여러 종류의 평판형 디스플레이 제품에 사용되고 있다. 사용된 In2O3와 SnO2 분말은 높은 순도의 금속을 사용하였으며, 공질법을 이용하여 분말을 제조하였으며, 혼합된 In2O3-SnO2 분말은 하소조건과 소결조건에 따라 특성을 평가 하였다. 본 연구의 목적인 ITO sprttering 타켓의 SnO2 분산조건은 하소 온도가 증가함에 따라 분산성이 뛰어났으며, 조사된 30wt% 에서 5wt%로 SnO2의 함량이 감소함에 따라 분산성은 향상되었다. 이러한 결과들로부터 ITO 타켓 밀도와 SnO2의 분산성은 1150C 이상에서 휘발하는 SnO2의 량에 의해 크게 영향을 받는다.