• International Journal of Control, Automation, and Systems
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• 제6권3호
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• pp.413-423
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• 2008

The template matching method is used as a simple method to track objects or patterns that we want to search for in the input image data from image sensors. It recognizes a segment with the highest correlation as a target. The concept of this method is similar to that of SNF (Strongest Neighbor Filter) that regards the measurement with the highest signal intensity as target-originated among other measurements. The SNF assumes that the strongest neighbor (SN) measurement in the validation gate originates from the target of interest and the SNF utilizes the SN in the update step of a standard Kalman filter (SKF). The SNF is widely used along with the nearest neighbor filter (NNF), due to computational simplicity in spite of its inconsistency of handling the SN as if it is the true target. Probabilistic Strongest Neighbor Filter for m validated measurements (PSNF-m) accounts for the probability that the SN in the validation gate originates from the target while the SNF assumes at any time that the SN measurement is target-originated. It is known that the PSNF-m is superior to the SNF in performance at a cost of increased computational load. In this paper, we suggest an image tracking algorithm that combines the template matching and the PSNF-m to estimate the states of a tracked target. Computer simulation results are included to demonstrate the performance of the proposed algorithm in comparison with other algorithms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.1022-1026
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• 1998

The mutifilamentary $Nb_3$Sn wire containing 135 Nb filaments was manufactured by the internal tin method. The critical current density ($J_C$) in magnetic fields for the wires heat-treated at $660^{/circ}C$ and $700^{/circ}C$ were investigated. The Non-Cu $J_C$ and n-value of 0.82 mm$\phi$ $Nb_3$Sn wire heat-treated at $700^{/circ}C$ for 240 hours was approximately 450 A/$mm^2$ at 12T, 4.2K and 14, respectively. Also the $B_{C2}$ of $Nb_3$Sn wire extrapolated by Kramer plot was 27.2T. The wire heat-treated at $700^{/circ}C$ for 240 hours showed smaller residual tin concentration in the matrix and the larger area of $Nb_3$Sn layer as comparison with the wire heat-treated at $660^{/circ}C$.

• 한국생산제조학회지
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• 제20권2호
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• pp.193-201
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• 2011

Recently, mechanical reliabilities including a drop test have been a hot issue. In this paper, solder balls with new components which are Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.5Cu-0.05N are introduced, and board level drop test for them are conducted under JEDEC standard in which the board with 15 flip chips is dropped as 1,500g acceleration during 0.5ms. The drop simulations are studied by using a implicit method in the ANSYS LS-DYNA, and modal analysis is made. Through both analyses, the solder balls with new components are evaluated under the drop. It is found that the maximum stress of each chip is occurred between the solder ball and the PCB, and the highest value among the maximum stresses in the chips is occurred on the chip nearest to fixed holes on the board in the drop tests and simulations.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.125-130
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• 1999

After $SnO_2$ fine powder by precipitation method, Ca as crystallization inhibitor and Pd as catalyst were added to $SnO_2$ raw material by various methods. Thick film device was fabricated on the alumina substrate by mixing ethylene glycol and such mixed powders. The sensing characteristics of the device for methane gas were investigated. The most excellent gas sensing property was shown by the thick film device fabricated by Method 3 in which Ca and Pd doped $SnO_2$ powder is prepared by mixing $SnO_2$ powder, 0.1 wt% Ca acetate and 1 wt% $PdCl_2$ in deionized water and by calcining the mixture, after $Sn(OH)_4$ is dried at $110^{\circ}C$ for 36h. The sensitivity of the sensor fabricated with $SnO_2$-0.1 wt%Ca acetate-1wt%$PdCl_2$ powder heat-treated at $700^{\circ}C$ for 1h was about 86% for 5,000 ppm methane in air at $350^{\circ}C$ of the operating temperature. Response time and recovery were also excellent.

• 센서학회지
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• 제17권5호
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• pp.361-368
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• 2008

Nanosized $SnO_2$ particles were synthesized by homogeneous precipitation method using tin chloride ($SnCl_4{\cdot}5H_{2}O$) and urea ($CO(NH_2)_2$). The powders were heated at $500^{\circ}C$ and $600^{\circ}C$ for 2h. The crystal structure, microstructure, thermal behavior, specific surface area were analyzed using XRD, FE-SEM, TGA and BET, respectively. The initial resistance and the $H_2$ sensing properties were measured as a function of ${Sb_2}{O_3}$ and Pd doping concentrations. The resistance was decreased with the addition of ${Sb_2}{O_3}$ and the sensitivity for $H_2$ gas was increased with the addition of Pd. Thus, the optimum $H_2$ gas sensing property was obtained in the 0.25.mol% ${Sb_2}{O_3}$ and 1.w% added $SnO_2$ powders.

• Nuclear Engineering and Technology
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• 제46권6호
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• pp.783-796
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• 2014

The coarse mesh finite difference (CMFD) method is applied to the discontinuous finite element method based discrete ordinate calculation for source convergence acceleration. The three-dimensional (3-D) DFEM-Sn code FEDONA is developed for general geometry applications as a framework for the CMFD implementation. Detailed methods for applying the CMFD acceleration are established, such as the method to acquire the coarse mesh flux and current by combining unstructured tetrahedron elements to rectangular coarse mesh geometry, and the alternating calculation method to exchange the updated flux information between the CMFD and DFEM-Sn. The partial current based CMFD (p-CMFD) is also implemented for comparison of the acceleration performance. The modified p-CMFD method is proposed to correct the weakness of the original p-CMFD formulation. The performance of CMFD acceleration is examined first for simple two-dimensional multigroup problems to investigate the effect of the problem and coarse mesh sizes. It is shown that smaller coarse meshes are more effective in the CMFD acceleration and the modified p-CMFD has similar effectiveness as the standard CMFD. The effectiveness of CMFD acceleration is then assessed for three-dimensional benchmark problems such as the IAEA (International Atomic Energy Agency) and C5G7MOX problems. It is demonstrated that a sufficiently converged solution is obtained within 7 outer iterations which would require 175 iterations with the normal DFEM-Sn calculations for the IAEA problem. It is claimed that the CMFD accelerated DFEM-Sn method can be effectively used in the practical eigenvalue calculations involving general geometries.