• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of Satellite, Information and Communications
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• v.7 no.3
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• pp.135-139
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• 2012

A digital controller can simply realize a complex operation algorithm and power control process which can not be applied by an analog circuit for a solar array regulator(SAR). The digital resistive control(DRC) makes an equivalent input impedance of the SAR be resistive characteristic. The resistance of the solar array varies largely in a voltage source region and slightly in a current source region. Therefore when the solar array regulator is controlled by the DRC, the Advanced Incremental Conductance MPPT Algorithm with a Variable Step Size(AIC-MPPT-VSS) is suitable. The AIC-MPPT-VSS, however, using small signal resistance and large signal resistance of the solar array can not limit the absolute value of the solar array power. In this paper, the solar array power limiter is suggested and the BUCK-BOOST type SAR which is fully controlled by the digital controller is verified by simulation.

• Journal of Power Electronics
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• v.17 no.4
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• pp.892-904
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• 2017

A design of a Class-E inverter with only one inductor and one capacitor is presented. It is operated at the optimal operation mode for domestic cooker. The design principle is based on the zero-voltage derivative switching (ZVDS) of the Class-E inverter with a parallel load network, which is a parallel resonant equivalent circuit. An induction load characterization is obtained from a large-signal excitation test bench, which is the key to an accurate design of the induction cooker system. Consequently, the proposed scheme provides a more systematic, simple, accurate, and feasible solution than the conventional quasi-resonant inverter analysis based on series load network methodology. The derivative of the switch voltage is zero at the turn-on transition, and its absolute value is relatively small at the turn-off transition. Switching losses and noise are reduced. The parameters of the ZVDS Class-E inverter for the domestic induction cooker must be selected properly, and details of the design of the components of this Class-E inverter need to be addressed. A 1,200 W prototype is designed and evaluated to verify the validation of the proposed topology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.10A
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• pp.1579-1587
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• 1999

Bias-dependent noise models of $0.2\mu\textrm{m}$ gate length P-HEMT's which are scalable with gate width are proposed. To predict S-parameters of the P-HEMT's the intrinsic parameters except for $\tau$ subtracted the offsets introduced in this paper are normalized to the gate width and then scaled. The small-signal model parameters are expressed as fitting functions of the drain current to $\textrm{I}_{dss}$ ratio and gate width. In addition, to estimate accurately noise parameters the noise temperature $\textrm{T}_{g}$ of the intrinsic resistance, the equivalent noise conductance $\textrm{G}_{ni}$ of the gate current noise source, and the equivalent noise conductance $\textrm{G}_{no}$ of the drain current noise source are adopted as the noise model parameters. The extracted values of $\textrm{T}_{g}$ are nearly independent of drain current and gate width and their average is around the ambient temperature. The extracted values of $\textrm{G}_{ni}$ are small enough to be neglected to the circuit characteristics. From the comparison of the noise model with only $\textrm{G}_{no}$ and that having $\textrm{T}_{g}$, $\textrm{G}_{ni}$ and $\textrm{G}_{no}$ to the measured data it is fund that even the former model is in good agreement with the measured noise parameters. Thus, from a practical point of view the noise model having only the drain current noise source is confirmed as a scalable bias-dependent model.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.11
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• pp.2238-2248
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• 1994

In this paper, we analyze a Microwave Amplifier Ultra-Wideband charateristic to apply Multi-Giga b/s optical receiver preamplifier in high speed optical communication system. To obtain frequency expanding effect. we analyze the frequency gain degradation effects of capacitances in the GaAs MESFET small-signal equivalent circuit and design Feedback amplifier Module(FAM) which has inductor peaking elements to compensate its effects and to expand frequency band. We derive optimum inductor peaking values in order to get flat gain in frequency band. The input and the output impedances of FAM are matched by Real Frequency Method and we design one and two stage ultra wideband microwave amplifier. With simulation results, it show $6.36\sim6.86dB$ and $9.1\sim10.3dB$ gains and execllent gain flatness in $0.5\sim12GHz$ respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1789-1796
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• 2012

In this paper, a new high-efficiency CMOS bridge rectifier for driving RFID tag chips is designed and analyzed. The input stage of the proposed rectifier is designed as a cascade structure connected with two NMOSs for reducing the gate capacitance by circuitry method, which is the main path of the leakage current that is increased when the operating frequency is increased. This gate capacitance reduction technique using the cascade input stage for reducing the gate leakage current is presented theoretically. The output characteristics of the proposed rectifier are derived analytically using its high frequency small-signal equivalent circuit. For the general load resistance of $50K{\Omega}$, the proposed rectifier shows better power conversion efficiencies of 28.9% for 915MHz UHF (for ISO 18000 -6) and 15.3% for 2.45GHz microwave (for ISO 18000-4) than those of 26.3% and 26.8% for 915MHz, and 13.2% and 12.6% for 2.45GHz of compared other two existing rectifiers. Therefore, the proposed rectifier may be used as a general purpose rectifier to drive tag chips for various RFID systems.