• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.413-419
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• 1997

The specimens which were prepared from cokes with additions of 0~25 wt% B4C were sintered in Ar atmosphere at 220$0^{\circ}C$. The effects of B4C content on graphitization and oxidation resistance of cokes were investigated. B4C accelerates the graphitization of cokes and at 220$0^{\circ}C$ the degree of graphitization increased from 0.33 which is the value of pure carbon to 0.56, which increased bluk density and porosity. Especially bending strength increased as th graphitization temperature increased. Oxidation resistance property was greatly improved when B4C was added more than 10wt% at 80$0^{\circ}C$ and when B4C was added more than 20wt% at 100$0^{\circ}C$. This was because that the thin layer of B2O3 glass phase on the surface of the composite could be identified to increase the oxidation resistance.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.66-70
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• 1986

The calcining temperature ranging from 900$^{\circ}C$ to 1300$^{\circ}C$ affected on the planar coupling factor and resonance characteristics of BaTiO3 ceramics doped with 0.2 wt% MnO2 have been investigated. Dielectric constant planar coupling factor and anti-resonance frequency of the sample increased with the calcining temperature up to 1,200$^{\circ}C$ and decreased above that temperature but the resonance frequency decreased slightly with the increasing calcining temperature. The planar coupling factor and anti-resonance frequency increased with the sintered density and dielectric constant while the resonance frequency was almost constant. The resonance and anti-resonance frequency increased with the sample temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.11-14
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• 1993

$BaO-TiO_2$ ceramics ($BaO:TiO_2$=18.2:81.8[mol.%]) were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. Increasing the sintering temperature, the sintered density was decreased. At the sintering temperature of 1400$[^{\circ}C]$, dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 35.03, 5690, -4.433$[ppm/^{\circ}C]$, respectively. Increasing the annealing time, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was decreased.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.216-221
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• 2010

The microstructure, electrical properties, and DC-accelerated aging behavior of the Zn-Pr-Co-Cr-Y-Er (ZPCC-YE) varistors were investigated for different amounts of erbium oxide ($Er_2O_3$). The microstructure consisted of zinc oxide grain and an intergranular layer ($Pr_6O_{11}$, $Y_2O_3$, and $Er_2O_3$-rich phase) as a secondary phase. The increase of $Er_2O_3$ amount decreased the average grain size and increased the sintered density. As the $Er_2O_3$ amount increased, the breakdown field increased from 5094 V/cm to 6966 V/cm and the nonlinear coefficient increased from 27.8 to 45.1. The ZPCC-YE varistors added with 0.5 to 1.0 mol% $Er_2O_3$ are appropriate for high voltage, with high nonlinearity and stability against DC-accelerated aging stress.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1999-2003
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• 2014

Indium tin oxide ($In_2Sn_{1-x}O_{5-y}$) nanoparticles were synthesized by hydrothermal method from stable indium tin acetylacetone complexes and postannealing at $600^{\circ}C$. The absence of chlorine ions shortened the synthesis process, decreased the particle agglomeration and improved the particle purity. The introduced complexing ligand acetylacetone decreased the obtained nanoparticle size. The improved powder properties accelerated the sintering of the $In_2Sn_{1-x}O_{5-y}$ nanoparticles and reached a relative density of 96.4% when pressureless sintered at $1400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.1-6
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• 1993

Dielectric and piezoelectric porperties of pseudoternary xPb(Al2/3W1/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 (x=1~10mol%) ceramic system have been investigated as a function of the amount of PAW[Pb(Al2/3W1/3)O3] and sintered from 110$0^{\circ}C$ to 120$0^{\circ}C$ for 1hr. As the amount of PAW increases, the c/a of tetragonal structure decreases. The grain size was reduced with increasing the amount of PAW addition. However, the density, dielectric constant and electromechanical coupling factor(kp) exhibited a maximum value at the amount of 5mol% PAW addition.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.471-476
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• 1994

The influence of TiO2 addition on the sintering and microstructure of magnesia ceramics was studied. An excess amount of TiO2 over the solid solubility limit reacted with magnesia to form Mg2TiO4 compound above 130$0^{\circ}C$. The deviation of lattice parameter of MgO was estimated to be under 0.2% when existence of TiO2 in MgO. The addition of TiO2 markedly promoted the densification of MgO at comparatively low temperature and the sintered density of about 98% of the theorectical was obtained at 150$0^{\circ}C$, 2h. The densification was mainly governed by grain growth of MgO and the effect of Mg2TiO4 existing as a second phase on depression of grain growth of MgO was not exhibited.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.97-101
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• 1992

Cordierite glass ceramic has become an electronic substrate material for electronic circuits and the use of whiskers for improving strength and toughness is evident. Green sheets of mixtures containing 15% silicon nitride were sintered to greater than 99 % density. The microstructure was analysed using optical microscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD). The toughness and hardness were improved with increasing the whisker vol. % and sintering temperature. Especially, it is assumed that toughening increasing at the more high sintering temperature relevants to the glass phase increasing, as showned in the roughness of the fracture surfaces. It was directionally dependent of whisker direction during processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.446-450
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• 2001

In this study, microstructural and electrical properties of (Pb)(La,Nd)$TiO_3$ cerramics were investigated as a function of CuO addition. Taking into consideration Tc of $325^{\circ}C$, dynamic range of 49dB( at the wafer form) and density of $7.71g/cm^{3}$, it can be concluded that the specimen S2 sintered at $1200^{\circ}C$ is the best for the resonator application, Dynamic characteristics of energy-trapped 20MHz SMD type resonator as a function of internal dot size variation were also investigated. Dynamic range characteristics showed the highest value of 60.72dB at S2-4(dot size 1.13mm).