• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.59-62
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• 1996

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.87-90
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• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.300-304
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• 2002

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.321-329
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• 1994

Functionally gradient materials(FGM), which have the continuous or stepwise variation in a composition and microstructure, are being noticed as the material that solves problems caused by heterogeneous interface of coating or joining. And these materials also expect new functions occured by gradient composition itself. Therefore, to examine possibility of thermal barrier materials, TZP/Mo·FGM and TZP/Ni·FGM were fabricated by sintering method. As to the sintered specimens, sintering shrinkage, relative density and Vicker's hardness in each composition were examined. The phenomena due to the difference of sintering shrinkage velocity during sintering process and the thermal stress induced through differences of thermal expansion coefficient in FGM were discussed. And the structure changes at interface and microsturcture of FGM were investigated. As a results, the difference of shrinkage between ceramic and metal was about 14% in TZP/Mo and 7% in TZP/Ni. The relative density and hardness were considerably influenced by metal content changes. Owing to unbalance of sintering shrinkage velocity between ceramic and metal, various sintering defects were occured. To control these sintering defects and thermal stress, gradient composition of FGM should be narrow. The microstructure changes of FGM depended on the ceramic or metal volume percents and were analogous to the theoretical design.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.745-750
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• 2001

Ni-33.3at%Si elemental powder mixtures were mechanically alloyed by a high-energy ball mill, followed by CIP (cold isostatic pressing) and HIP (hot isostatic pressing) for different processing conditions. Only elemental phases (Ni and Si) were observed for the 15 min mechanically alloyed (MA 15 min) powder. but $Ni_2$Si and elemental phases were observed to coexist for the 30 min mechanically alloyed (MA 30 min) powder. Elemental Ni and $Ni_2$Si phases were observed for the HIPed compact of MA 15 min powder at 100 and 150 MPa for 2 hr at $800^{\circ}C$. Only the $Ni_2$Si phase was, however, observed for the HIPed compacts of MA 30 min powder. For the HIPed compacts, the highest sintered density was obtained to be 99.5% of theoretical density by a HIP step at $1100^{\circ}C$ at 150MPa for 2hr. The hardness values of the HIPed $Ni_2$Si compacts at $1100^{\circ}C$ at 100/150 MPa for 2 hr were higher than HRC 66. The densification and mechanical property of HIPed $Ni_2$Si compacts were found to depend on more HIP temperature than HIP pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.320-326
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• 1999

Aluminum oxynitride spinel (ALON) was synthesized by the direct melt nitridation (DMN) process using aluminum metal and aluminium oxide. The amount of ALON increased with increasing the reaction sintering temperature. The specimen containing up to 10 wt% Al showed ALON phase only when heat-treated beyond $1750^{\circ}C$. Whereas the specimen composed of more than 12 wt% Al showed unreacted AlN phase. Bulk density of reaction-sintered specimen was increased with increasing sintering temperature, except the speimen containing unreacted AlN where the density slightly decreased when heat-treated beyond $1750^{\circ}C$, Transgranular fracture mode was observed predominantly in the specimen with higher Al content.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.827-835
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• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.629-634
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• 1993

Dielectric and electrostrictive properties of 0.99Pb(Mg1/3Nb2/3)O3-0.01Pb(Mn2/3W1/3)O3 system using KCl-NaCl salts have been investigated as a function of the amount of excess MgO. For the specimens calcined at $700^{\circ}C$ for 1h and then sintered at 115$0^{\circ}C$ for 4h, the perovskite phase and the relative density were about 98% and 95%, respectively. With the addition of excess MgO up to 10mol%, the dielectric constant and the electrostrictive strain increased due to the increase of density and grain size, and these properties were degraded by the further addition of excess MgO. For the 10mol% excess MgO added specimen, the maximum electrostrictive strain, Xmax, and the electrostrictive coefficient, Q11, were 4.5$\times$10-4, 3.5$\times$10-2m4/C2, respectively. These results were correlated with the property of PMW and microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.320-321
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• 2008

Ferroelectric $SrBi_2Ta_2O_9$(SBT) ceramics were deposite on Pt/Ti/SiO2/Si substrates using a sintered SBT target and then were annealed in the oxygen atmosphere at $750^{\circ}C$, the most excellent characteristics were shown, and the remnant polarization ($2P_r$) value and the coercive electric field ($E_c$) were respectively about 12.40[${\mu}C/cm^2$] and 30[kV/cm]. Moreover, the excellent fatigue characteristic t was little aged even after $10^{10}$ cycles of switchings. The leakage current density and the dielectric constant of the SBT capacitor annealed in the oxygen atmosphere were respectively approximately $2.13\times10^{-9}$ [A/$cm^2$] and 340.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.73-76
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• 2003

Phase transformation of Bi-2223 tape during the final heat treatment has been investigated through the various duration time of heat treatment in a specially designed 3-step heat treatment. It was found that the phase assemblage in the sintering was determined by the sintering time and temperature. In this study, sintering time was changed to optimize the Bi-2223 phase assemblage, and acquire high critical current density. High critical current samples with Ic = 85 A and Je = 8.9 kA/$cm^2$ have been measured at 77K and self-field for 55-filament tapes sintered by optimum condition.