Effect of annealing conditions on the microstructure of SBT Capacitor for NVFRAM

Ferroelectric $SrBi_2Ta_2O_9$(SBT) ceramics were deposite on Pt/Ti/SiO2/Si substrates using a sintered SBT target and then were annealed in the oxygen atmosphere at $750^{\circ}C$, the most excellent characteristics were shown, and the remnant polarization ($2P_r$) value and the coercive electric field ($E_c$) were respectively about 12.40[${\mu}C/cm^2$] and 30[kV/cm]. Moreover, the excellent fatigue characteristic t was little aged even after $10^{10}$ cycles of switchings. The leakage current density and the dielectric constant of the SBT capacitor annealed in the oxygen atmosphere were respectively approximately $2.13\times10^{-9}$ [A/$cm^2$] and 340.