• 제목/요약/키워드: Single-substrate Transfer

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Influence of Fe(110) Substrate with strong On-site Coulomb Repulsion on the Electronic Structure of Single Cobalt Tetraphenylporphyrin: Scanning Tunneling Microscopy Study

  • 오영택;정호균;서정필;김효원;전상준;김성민;유재준;국양
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.94-94
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    • 2010
  • Scanning tunneling microscopy (STM) was used to study the electronic structure of cobalt(II) tetraphenylporphyrin (CoTPP) on the Fe/W(110) substrate. Clover-like conformation of CoTPP was observed and showed bias dependent STM images. The central Co(II) ion of this porphyrin was protruded on the positive biases, but it was depressed on the negative biases. On the positive biases, the phenyl rings of CoTPP appeared to be bright contrary to the invisible pyrrole rings. These results were compared the first-principles calculations using GGA and GGA+U to elucidate the influence of the Fe substrate. GGA+U results agreed well with the experimental results; however, GGA did not. These results show that proper treatment of the on-site Coulomb repulsion of the Fe ions is crucial to describe the electronic structure of this system. By the comparison between the GGA+U calculations on the Fe substrate and the gas phase calculations, it can be noted that chemical potential shift occurred accompanying charge transfer from the Fe ions of the substrate to the pyrrole ligand of the porphyrin.

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In-Situ Heat Cooling using Thick Graphene and Temperature Monitoring with Single Mask Process

  • Kwack, Kyuhyun;Chun, Kukjin
    • 센서학회지
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    • 제24권3호
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    • pp.155-158
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    • 2015
  • In this paper, in-situ heat cooling with temperature monitoring is reported to solve thermal issues in electric vehicle (EV) batteries. The device consists of a thick graphene cooler on top of the substrate and a platinum-based resistive temperature sensor with an embedded heater above the graphene. The graphene layer is synthesized by using chemical vapor deposition directly on the Ni layer above the Si substrate. The proposed thick graphene heat cooler does not use transfer technology, which involves many process steps and does not provide a high yield. This method also reduces the mechanical damage of the graphene and uses only one photomask. Using this structure, temperature detection and cooling are conducted simultaneously using one device. The temperature coefficient of resistance (TCR) of a $1{\times}1mm^2$ temperature sensor on 1-$\grave{i}m$-thick graphene is $1.573{\times}10^3ppm/^{\circ}C$. The heat source cools down $7.3^{\circ}C$ from $54.4^{\circ}C$ to $47.1^{\circ}C$.

SWNT 투명박막히터의 열성능 평가를 위한 자유대류 열전달 해석 (A COMPUTATIONAL STUDY ON FREE CONVECTION FOR THERMAL PERFORMANCE EVALUATION OF A SWNT THIN-FILM HEATER)

  • 곽호상;이성은;박경석;김경진
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2009년 춘계학술대회논문집
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    • pp.315-320
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    • 2009
  • A computational investigation is conducted on free convection from a thin plate having a surface heat source. The thermal configuration simulates the recently-proposed transparent film heater made of a single-walled carbon nanotube film on a glass substrate. The Navier-Stokes computations are carried out to study laminar free convection from the heater. Parallel numerical experiments are performed by using a simplified design analysis model which solve the conduction equation with the boundary conditions utilizing several existing correlations for convective heat transfer coefficient. Comparison leads to the most suitable boundary condition for the thermal model to evaluate the performance evaluation of a transparent thin-film heater.

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Winkler spring behavior in FE analyses of dowel action in statically loaded RC cracks

  • Figueira, Diogo;Sousa, Carlos;Neves, Afonso Serra
    • Computers and Concrete
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    • 제21권5호
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    • pp.593-605
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    • 2018
  • A nonlinear finite element modeling approach is developed to assess the behavior of a dowel bar embedded on a single concrete block substrate, subjected to monotonic loading. In this approach, a discrete representation of the steel reinforcing bar is considered, using beam finite elements with nonlinear material behavior. The bar is connected to the concrete embedment through nonlinear Winkler spring elements. This modeling approach can only be used if a new constitutive model is developed for the spring elements, to simulate the deformability and strength of the concrete substrate. To define this constitutive model, an extensive literature review was conducted, as well as 3 experimental tests, in order to select the experimental data which can be used in the calibration of the model. Based on this data, an empirical model was established to predict the global dowel response, for a wide range of bar diameters and concrete strengths. This empirical model provided the information needed for calibration of the nonlinear Winkler spring model, valid for dowel displacements up to 4 mm. This new constitutive model is composed by 5 stages, in order to reproduce the concrete substrate response.

Study on Graphene Thin Films Grown on Single Crystal Sapphire Substrates Without a Catalytic Metal Using Pulsed Laser Deposition

  • Na, Byoung Jin;Kim, Tae Hwa;Lee, Cheon;Lee, Seok-Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.70-73
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    • 2015
  • Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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Ultra-Clean Patterned Transfer of Single-Layer Graphene by Recyclable Pressure Sensitive Adhesive Films

  • Kim, Sang Jin;Lee, Bora;Choi, Yong Seok;Kim, Philip;Hone, James;Hong, Byung Hee;Bae, Sukang
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.301.1-301.1
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    • 2016
  • We report an ultraclean, cost-effective, and easily scalable method of transferring and patterning large-area graphene using pressure sensitive adhesive films (PSAFs) at room temperature. This simple transfer is enabled by the difference in wettability and adhesion energy of graphene with respect to PSAF and a target substrate. The PSAF transferred graphene is found to be free from residues, and shows excellent charge carrier mobility as high as ${\sim}17,700cm^2/V{\cdot}s$ with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas. In addition, the sheet resistance of graphene transferred by recycled PSAF does not change considerably up to 4 times, which would be advantageous for more cost-effective and environmentally friendly production of large-area graphene films for practical applications.

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Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발 (Ge thin layer transfer on Si substrate for the photovoltaic applications)

  • 안창근;조원주;임기주;오지훈;양종헌;백인복;이성재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.743-746
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    • 2003
  • We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

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Altered sugar donor specificity and catalytic activity of pteridine glycosyltransferases by domain swapping or site-directed mutagenesis

  • Kim, Hye-Lim;Kim, Ae Hyun;Park, Mi Bi;Lee, Soo-Woong;Park, Young Shik
    • BMB Reports
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    • 제46권1호
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    • pp.37-40
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    • 2013
  • CY-007 and CY-049 pteridine glycosyltransferases (PGTs) that differ in sugar donor specificity to catalyze either glucose or xylose transfer to tetrahydrobiopterin were studied here to uncover the structural determinants necessary for the specificity. The importance of the C-terminal domain and its residues 218 and 258 that are different between the two PGTs was assessed via structure-guided domain swapping or single and dual amino acid substitutions. Catalytic activity and selectivity were altered in all the mutants (2 chimeric and 6 substitution) to accept both UDP-glucose and UDP-xylose. In addition, the wild type activities were improved 1.6-4.2 fold in 4 substitution mutants and activity was observed towards another substrate UDP-N-acetylglucosamine in all the substitution mutants from CY-007 PGT. The results strongly support essential role of the C-terminal domain and the two residues for catalysis as well as sugar donor specificity, bringing insight into the structural features of the PGTs.

Highly Sensitive and Transparent Pressure Sensor Using Double Layer Graphene Transferred onto Flexible Substrate

  • Chun, Sungwoo;Kim, Youngjun;Jin, Hyungki;Jung, Hyojin;Park, Wanjun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.229.2-229.2
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    • 2014
  • Graphene, an allotrope of carbon, is a two-dimensional material having a unique electro-mechanical property that shows significant change of the electrical conductance under the applied strain. In addition of the extraordinary mechanical strength [1], graphene becomes a prospective candidate for pressure sensor technology [2]. However, very few investigations have been carried out to demonstrate characteristics of graphene sensor as a device form. In this study, we demonstrate a pressure sensor using graphene double layer as an active channel to generate electrical signal as the response of the applied vertical pressure. For formation of the active channel in the pressure sensor, two single graphene layers which are grown on Cu foil (25 um thickness) by the plasma enhanced chemical vapor deposition (PECVD) are sequentially transformed to the poly-di-methyl-siloxane (PDMS) substrate. Dry and wet transfer methods are individually employed for formation of the double layer graphene. This sensor geometry results a switching characteristic which shows ~900% conductivity change in response to the application of pulsed pressure of 5 kPa whose on and off duration is 3 sec. Additionally, the functional reliability of the sensor confirms consistent behavior with a 200-cycle test.

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