• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.384-391
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• 2013

We propose a split-encryption scheme on converting original images to multiple ciphertexts. This conversion introduces one random phase-only function (POF) to influence phase distribution of the preliminary ciphertexts. In the encryption process, the original image is mathematically split into two POFs. Then, they are modulated on a spatial light modulator one after another. And subsequently two final ciphertexts are generated by utilizing two-step phase-shifting interferometry. In the decryption process, a high-quality reconstructed image with relative error $RE=7.6061{\times}10^{-31}$ can be achieved only when the summation of the two ciphertexts is Fresnel-transformed to the reconstructed plane. During the verification process, any silhouette information was invisible in the two reconstructed images from different single ciphertexts. Both of the two single REs are more than 0.6, which is better than in previous research. Moreover, this proposed scheme works well with gray images.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.840-844
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• 2002

A spherical $BaMgAl_{10}$ $O_{17}$ :Eu phosphor has been synthesized by a multi-step precipitation route. In order to successfully synthesize the phosphor with spherical shape, the hydrated-alumina particles should be controlled for spherical shape. In this process, the hydroxypropyl cellulose (HPC) was used as a dispersing reagent. This reagent plays an important role in that the particles were controlled to have the uniform size of sub-micron. The final product prepared by the multi-step precipitation method maintained spherical shape with uniform size of 0.4$\mu\textrm{m}$. It can be seen in X-ray diffraction patterns, formation of the single phase of $BaMgAl_{10}$ $O_{17}$ :Eu phosphor prepared by the multi-step precipitation method at $1350^{\circ}C$. Also, the emission spectra of spherical $BaMgAl_{O}$ $10_{17}$ :Eu phosphor in the present case was compared with those of commercially-available blue phosphor under VUV (Vacuum Ultra Violet) excitation. The luminescence process of the $BaMgAl_{10}$ $O_{17}$ :Eu phosphor is characterized by the $4f^{6}$$5d^1$longrightarrow4f$^{7}$ transition (blue) of the $Eu^{2+}$ ion acting as an activating center and the maximum luminescence intensity was obtained by reduction treatment at 145$0^{\circ}C$.

• The Journal of the Acoustical Society of Korea
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• v.22 no.6
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• pp.434-442
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• 2003

Software internationalization, the process of making software easier to localize for specific languages, has deep implications when applied to speech technology, where the goal of the task lies in the very essence of the particular language. A greatdeal of work and fine-tuning has gone into language processing software based on ASCII or a single language, say English, thus making a port to different languages difficult. The inherent identity of a language manifests itself in its lexicon, where its character set, phoneme set, pronunciation rules are revealed. We propose a decomposition of the lexicon building process, into four discrete and sequential steps. For preprocessing to build a lexical model, we translate from specific language code to unicode. (step 1) Transliterating code points from Unicode. (step 2) Phonetically standardizing rules. (step 3) Implementing grapheme to phoneme rules. (step 4) Implementing phonological processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.371-373
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• 1998

The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.491-493
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• 1998

The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1060-1062
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• 1993

This paper presents the dynamic analysis method of a linear induction motor by finite element method. For simulation of dynamic performance, a step by step process with respect to time is used with external voltage source and motional equation. Movement is taken into account by a combination of mesh distortion and remeshing technique.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1358-1366
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.